HVV1011-500L ASI | Alldatasheet

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Technical content

The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at 1030 MHz & 1090 MHz using a 2.4ms pulse burst (32 s on/18 s off x 48) repeated every 24ms. The device utilizes a RoHS compliant metal ceramic flanged package with a ceramic lid. The HV800A package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1011-500L device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=10mA 102 V IDSS Drain Leakage Current VGS=0V,VDS=50V <300 A IGSS Gate Leakage Current VGS=5V,VDS=0V <2 A GP 1 Power Gain POUT=500W, F=1030 MHz 16.5 dB IRL1 Input Return Loss POUT=500W, F=1030 MHz 12 dB D

1 Drain Efficiency POUT=500W, F=1030 MHz 51 %

PD1 Pulse Droop POUT=500W, F=1030 MHz 0.2 dB BD1 Burst Droop POUT=500W, F=1030 MHz 0.9 dB 1Under Pulse Conditions: 32 s on/18 s off x 48, Period = 24ms at VDD = 50V, IDQ = 100mA 2Rated at TCASE = 25° C Symbol Parameter Value Unit VDSS Drain-Source Voltage 95 V VGS Gate-Source Voltage -10 to +10 V IDSX Drain Current 40 A PD

2 Power Dissipation 970 W

TS Storage Temperature -65 to +150 ° C TJ Junction Temperature 200 ° C Symbol Parameter Max Unit JC 1 Thermal Resistance 0.18 ° C/W Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance POUT = 500W F = 1030 MHz 20:1 VSWR

ELECTRICAL CHARACTERISTICS

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Note: Drawing is not actual size. SOURCE GATE DRAIN ASI PART NUMBER JDATE CODE inches mm ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse- -quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.