HVV1011-035 ASI | Alldatasheet

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The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz. PACKAGE The device resides in the SM200 surface mount package with a ceramic lid. The HVV1011-035 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol Parameter Conditions Min Typ Max Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=2mA 95 102 V IDSS Drain Leakage Current VGS=0V,VDS=50V 15 50 A IGSS Gate Leakage Current VGS=5V,VDS=0V 2 10 A GP 1 Power Gain POUT=35W, F=1090 MHz 20 21.5 dB IRL1 Input Return Loss POUT=35W, F=1090 MHz -12 -8 dB D

1 Drain Efficiency POUT=35W, F=1090 MHz 46 48 %

PD1 Pulse Droop POUT=35W, F=1090 MHz 0.3 0.5 dB VGS(Q) Gate Quiescent Voltage VDD=50V, IDQ=15mA 1.0 1.4 1.7 V VTH Threshold Voltage VDD=5V, ID=300uA 0.7 1.2 1.7 V 1Under Pulse Conditions: Pulse Width = 50 s, Pulse Duty Cycle = 5% at VDD = 50V, IDQ = 15mA 2Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 95 V VGS Gate-Source Voltage -10, 10 V IDSX Drain Current 2 A PD

2 Power Dissipation 116 W

TS Storage Temperature -65 to +150 TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance POUT = 35W F = 1090 MHz 20:1 VSWRSymbol Parameter Max Unit JC 1 Thermal Resistance 1.5 °C/W

ELECTRICAL CHARACTERISTICS

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7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM High Power Gain Excellent Ruggedness 50V Supply Voltage

ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for consequences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights. Note: Drawing is not actual size. .205+/-.008 [5.21+/-0.20] 0.45+/-.005 [1.13+/-0.13] .034+/-.005 [0.86+/-0.13] .020+/-.005 [0.51+/-0.13] .007 [0.17] .192+/-.005 [4.88+/-0.13] DRAIN SOURCE GATE .175+/-.008 [4.45+/-0.20] .018 [0.45] INCHES [MM] .088 +/- .008