HVV0912-450 ASI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=10mA 102 V IDSS Drain Leakage Current VGS=0V,VDS=50V <500 A IGSS Gate Leakage Current VGS=5V,VDS=0V <10 A GP 1 Power Gain POUT=450W,F=960 MHz 16.0 dB IRL1 Input Return Loss POUT=450W,F=960 MHz 7.5 dB D

1 Drain Efficiency POUT=450W,F=960 MHz 50 %

PD1 Pulse Droop POUT=450W,F=960 MHz <0.25 dB 1Under Pulse Conditions: Pulse Width = 10 s, Pulse Period = 100 s at VDD = 50V, IDQ = 100mA 2Rated at TCASE = 25° C

ELECTRICAL CHARACTERISTICS

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM Specifications are subject to change without notice. The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. The device utilizes a RoHS compliant flanged package with a ceramic lid. The HV800 package style is qualified for gross leak test – MIL-STD-883, Method 1014. Symbol Parameter Value Unit VDSS Drain-Source Voltage 95 V VGS Gate-Source Voltage -10 to +10 V IDSX Drain Current 40 A PD

2 Power Dissipation 1500 W

TS Storage Temperature -65 to +150 ° C TJ Junction Temperature 200 ° C High Power Gain Excellent Ruggedness 50V Supply Voltage PACKAGE Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance POUT = 450W F = 960 MHz 20:1 VSWR RUGGEDNESS ABSOLUTE MAXIMUM RATINGS

FEATURES

DESCRIPTION

1 Thermal Resistance ° C/W0.05 The HVV0912-450 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation.

Idq = 70mA Idq = 0mA Idq = 250mA Power Gain [dB] Idq = 0mA Idq = 70mA Idq = 250mA 50W Output Power 100W 200W 300W 400W 500W 600W 50V pulsewidth 20us duty cycle 5% RF Performance at 1090 MHz

1 2.5 5 10 25 ïM 0 $ ïM 0 $ ïM 0 $ ïM 0 $ ïM 0 $

1215 MHz

960 MHz

1090 MHz

Impedance presented to the input of the device & associated RF Gain performance 1 2.5 5 10 25 M ïM 0 $ M ïM 0 $ M ïM 0 $ M ïM 0 $ M ïM 0 $ 1717 Gain [dB] at 1dB compression 50V, Idq = 200mA pulsewidth 20us duty cycle 5% Desired impedance targets of the input matching circuit

Impedance presented to the output of the device & associated RF output power & Eff performance Output Power Drain Efficiency 25% 35% 45% 50% 55% 60% 65% 30% 40% 200W 400W 750W250W 300W 500W 600W350W 1.5Ropt2Ropt 3Ropt 1Ropt 0.8Ropt out 0.4 1 2 4 10 ïM 0 $ ïM 0 $ ïM 0 $ ïM 0 $ ïM 0 $ 200 200 200 200 200 200 300300 300 300 400 400 400 500 500 Loadline locations for 0.5, 1, 2, 3 x Ropt Drain Eff [%] P1dB [W] 50V, Idq = 70mA pulsewidth 20us duty cycle 5% 50V, Idq = 70mA pulsewidth 20us duty cycle 5%

55% 450W 400W 350W 5W 8W 10W 12W Pout Pin 1.5Ropt 60% 1.7Ropt 60% 1Ropt 60% 1.7Ropt 60% 2Ropt 55% 2Ropt 60% 1.5Ropt 55% 1.5Ropt 55% Impedance Target Selection 50V 0mA 70mA 200mA 550W 1Ropt 55% 16W Refer to impedance targets below based on the selected loadline value of Ropt 600W 2Ropt 55% 1.7Ropt 55% 2.5Ropt 55% 1Ropt 55% 1Ropt 55% 2Ropt 60% 1.5Ropt 60% 2Ropt 55% 1Ropt 55% 0.4 1 2 4 10 ïM 0 $ ïM 0 $ ïM 0 $ ïM 0 $ ïM 0 $ 1.5Ropt 1Ropt 0.7Ropt

Note: Drawing is not actual size. SOURCE GATE DRAIN ASI PART NUMBER JDATE CODE inches mm ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse- -quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.