HSCH-5315 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 4.0 V VF IF = 1.0 mA 500 mV RD IF = 5.0 mA 18 WW CT VR = 0 V f = 1.0 MHz 0.15 pF NF DD NF ZIF DD ZIF IF = 30 MHz f = 9.375 GHz PLO = 0 dBm NIF = 1.5 dB DC Load = 0 Ω 200 7.2 ±0.3 400 dB dB WW WW BEAM LEAD SCHOTTKY DIODE BATCH MATCHED HSCH5315 DESCRIPTION: The HSCH5315 is a Medium Barrier Beam Lead Schottky Diode Designed for X-Band Mixer Applications that is Batch Matched for NF and ZIF. MAXIMUM RATINGS IF 25 mA VR 4.0 V PDISS 300 mW @ TA = 25 OC TJ -65 OC to +175 OC TSTG -65 OC to +200 OC PACKAGE STYLE BL1 ORDER CODE: ASI30264