HSCH-3486 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VF IF = 1.0 mA 225 mV CT VR = 0 V f = 1.0 MHz 0.5 pF TSS BW = 2.0 MHz f = 10 GHz -54 dBm gg PIN = -40 dBm f = 10 GHz 7.5 mV/ mmW RV PIN = -40 dBm f = 10 GHz 2 8 K ohms ZERO BIAS SCHOTTKY DIODE HSCH-3486 PACKAGE STYLE 01 DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE:
- Replacement for HSCH3486 and MA4E928B-54
- True Zero Bias Operation
- Hermetic Glass Package MAXIMUM RATINGS IF 10 mA VR 2.0 V PDISS 300 mW @ TC = 25 OC TJ -65 OC to +150 OC TSTG -65 OC to +150 OC TSOLD +230 OC for 5 seconds