HRP55N10K DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=100V,ID=170A,RDS(ON)≤5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current-TC=25℃3 170 A Continuous Drain Current-TC=100℃3 130 Pulsed Drain Current4 600 EAS Single Pulse Avalanche Energy5 700 mJ PD Power Dissipation(TC=25℃) 240 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.6 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62.5 D S G HRP55N10K All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 3 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=40A --- 4.5 5 mΩ GFS Forward Transconductance -- --- -- -- S Dynamic Characteristics2 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 7850 --- pF Coss Output Capacitance --- 1010 --- Crss Reverse Transfer Capacitance --- 630 --- Switching Characteristics2 td(on) Turn-On Delay Time VDD=37.5V, ID=40A, RGEN=6.8Ω,VGS=10V --- 28 --- ns tr Rise Time --- 45 --- ns td(off) Turn-Off Delay Time --- 84 --- ns tf Fall Time --- 49 --- ns Qg Total Gate Charge2 VDS=37.5V,VGS=10V ID=40A --- 184 --- nC Qgs Gate-Source Charge 2 --- 33 --- nC Qgd Gate-Drain “Miller” Charge2 --- 60 --- nC Drain-Source Diode Characteristi VSD 1 Source-Drain Diode Forward Voltage VGS=0V,Id=40A --- 0.8 1.3 V HRP55N10K All d ata sheet.com
www.doingter.cn — 3 — Notes: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Package limitation current is 50A.Calculated continuous current based on maximum allowable junction temperature. 4: Repetitive rating, pulse width limited by max junction temperature. 5: Starting TJ = 25° C,L = 0.5mH, VDD=80V, IAS = 74A. Typical Characteristics： (TC=25℃ unless otherwise noted) HRP55N10K All d ata sheet.com
www.doingter.cn — 4 — HRP55N10K All d ata sheet.com
www.doingter.cn — 5 — HRP55N10K 0086-0755-8278-9056 All d ata sheet.com