HHV0405-175 ASI | Alldatasheet

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r r r r r HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10C 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/19/10 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 2 H V V0405-175 High Voltage, High Ruggedness UH FrPulsedrPowerrTransistor 420-470rMHz,r300µsrPulse,r10µrDutyrCycler ForrUH Frband,rWeatherrandrLongrRangerRadarrApplicationsr The innovative Semiconductor Company! The HVV0405-175 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. Notes: 1) Rated at TCASE = 25°C 2) All parameters measured under pulsed conditions at 175W output power measured at the 10% point of the pulse with pulse width = 300µsec, duty cycle = 10% and VDD = 50V, IDQ = 50mA in a broadband matched test fixture. 3) Amount of gate voltage required to attain nominal quiescent current. 4) Guaranteed by design. L97:! M@! LJN@ TSKJ! T&)R! S1D$),4O! K&'+*)04+! PULSE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATING (IEC 134) THERMAL/RUGGEDNESS PERFORMANCE

r r r r r HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10C 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/19/10 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 3 H V V0405-175 High Voltage, High Ruggedness UH FrPulsedrPowerrTransistor 420-470rMHz,r300µsrPulse,r10µrDutyrCycler ForrUH Frband,rWeatherrandrLongrRangerRadarrApplicationsr The innovative Semiconductor Company! Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 450MHz. Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 450MHz.

r r r r r HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10C 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/19/10 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 4 H V V0405-175 High Voltage, High Ruggedness UH FrPulsedrPowerrTransistor 420-470rMHz,r300µsrPulse,r10µrDutyrCycler ForrUH Frband,rWeatherrandrLongrRangerRadarrApplicationsr The innovative Semiconductor Company! Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 175W. Typical device performance under Class AB mode of operation and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The device was measured at 175W.

r r r r r HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10C 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/19/10 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 5 H V V0405-175 High Voltage, High Ruggedness UH FrPulsedrPowerrTransistor 420-470rMHz,r300µsrPulse,r10µrDutyrCycler ForrUH Frband,rWeatherrandrLongrRangerRadarrApplicationsr The innovative Semiconductor Company! Typical device performance under Class AB mode of operation at 450MHz and RF pulse conditions of 300µs pulse width and 10% duty cycle with VDD = 50V and IDQ = 50mA. The high voltage silicon vertical technology shows less than 1dB of power degradation over an extreme case teperature rise of 125°C. Measured at P1dB Compression Point TEMP Gain (dB) Power (W) Power (dBm) -40C 26.5 224 53.5 0C 25.9 233 53.7 25C 25.5 237 53.7 85C 24.2 210 53.2 HVV0405-175 Performance over Temperature

r r r r r HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS10C 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 07/19/10 Phoenix, Az. 85044 © 2009 HVVi Semiconductors, Inc. All Rights Reserved. 6 H V V0405-175 High Voltage, High Ruggedness UH FrPulsedrPowerrTransistor 420-470rMHz,r300µsrPulse,r10µrDutyrCycler ForrUH Frband,rWeatherrandrLongrRangerRadarrApplicationsr The innovative Semiconductor Company! Zin* Zout* Output ImpedanceMatching Network Input ImpedanceMatching Network Zo = 10 ȍ ZIN ZOUT 420MHz 420MHz

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