HD16-J HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM
- High surge current capability
Applications
- Rectifier From 16 To 20XX Marking Polarity: Color band denotes cathode HDXX H igh Diode Semiconductor SMAJ Notes: pad areas Symbol Item I I Thermal Resistance(Typical) Peak Forward Voltage I FM =2.0A l HD16 THRU HD20 1600V-2000V Item Symbol Unit Conditions Repetitive Peak Reverse Voltage VRRM V 1800 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load,Ta=50℃ Surge(Non-repetitive)Forward Current I FSM A 60HZ Half-sine wave,1 cycle,Ta=25℃ 30 Junction Temperature T j -55~+125 Storage Temperature T stg ℃ -55 ~ +150 1600 2000 V RMS V Maximum RMS Voltage H D16 H D18 H D20 1120 1260 1400
H igh Diode Semiconductor 图 典型反向特性曲线 FIG.3:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 0.2 0.4 0.6 1.0 100 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 0.8 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100
H igh Diode Semiconductor SMAJ SMAJ Dimensions in inches and (millimeters) 0.177(4.50) 0.157(3.99) 0.110(2.80) 0.098(2.50) 0.060(1.52) 0.030(0.76) 0.222(5.66) 0.194(4.93) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.096(2.42) 0.078(1.98) 0.067 (1.70) 0.047 (1.20) 4.12 2.0 1.8
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMA