HCSS8050 HOTTECH | Alldatasheet

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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCSS8050(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : SS8050 FEA TURES  Power Dissipation  PCM : 1 W (Ta=25°C ) MAXIMUM RATINGS (T A=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C=100μA, IE=0 40 V Collector-Emitter Breakdown Voltage V CEO I C=0.1mA, IB=0 25 V Emitter-Base Breakdown Voltage V EBO I E=100μA , IC=0 5 V Collector Cut-off Current I CBO V CB=40V , IE=0 0.1 μA Emitter Cut-off Current I CEO V CE=20V, IE=0 0.1 μA Emitter Cut-off Current I EBO V EB=5V , IC=0 0.1 μA DC Current Gain hFE(1) V CE=1V , IC=100mA 85 400 hFE(2) V CE=1V , IC=800mA 40 Collector-Emitter Saturation Voltage V CE(sat) I C=800mA , IB=80mA 0.5 V Base-Emitter Saturation Voltage V BE(sat) I C=800mA , IB=80mA 1.2 V Base-Emitter Voltage V BE V CE=1V, IC=10mA 1 V Transition Frequency f T VCE=10V,IC=50mA,f=30MHz 100 MHz CLASSIFICATION OF hFE Rank B C D D3 Range 85-160 120-200 160-300 300-400 Parameter Symbol Value Unit Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 5 V Collector Current-Continuous I C 1.5 A Collector Power Dissipation PC 625 mW Thermal Resistance Junction to Ambient RӨJA 200 °C/W Junction Temperature T J 150 °C Storage Temperature T stg -55-+150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HCSS8050(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics 100 1000 11 0 1 00 100 1000 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1 10 100 1000 100 1000 100 120 140 1 10 100 1000 100 1000 300 303 1500 300 COMMON EMITTER V CE=1V COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) ICVBE —— Ta=100ć Ta=25ć ICfT —— TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=10V Ta=25ć COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) ICVBEsat —— /g533=10 Ta=100ć Ta=25ć 1500 Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) VCB/ VEBCob/ Cib —— f=1MHz I E=0/IC=0 Ta=25ć 200 300303 300 3 30 300 300303 300 COMMON EMITTER V CE=1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=100ć Ta=25ć IChFE —— 1500 COMMON EMITTER T a=25ć 500uA 450uA 400uA 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic 30.3 /g533=10 Ta=100ć Ta=25ć COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ICVCEsat —— 1500 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 PC — — Ta AMBIENT TEMPERATURE Ta ( )ć COLLECTOR POWER DISSIPATION PC (W)

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCSS8050(NPN) GENERAL PURPOSE TRANSISTOR Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCSS8050(NPN) GENERAL PURPOSE TRANSISTOR