HCS9012 HOTTECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCS9012(PNP) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : S9012 FEA TURES Complementary to HCS9013V Excellent hFE Linearity MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO I C=-100μA, IE=0 -40 V Collector-Emitter Breakdown Voltage VCEO I C=-1mA, IB=0 -25 V Emitter-Base Breakdown Voltage VEBO I E=-100μA , IC=0 -5 V Collector Cut-off Current ICBO V CB=-40V , IE=0 -0.1 μA Collector Cut-off Current ICEO V CE=-20V, IB=0 -0.1 μA Emitter Cut-off Current IEBO V EB=-5V , IC=0 -0.1 μA DC Current Gain hFE(1) V CE=-1V , IC=-50mA 64 400 Collector-Emitter Saturation Voltage VCE(sat) I C=-500mA , IB=-50mA -0.6 V Base-Emitter Saturation Voltage VBE(sat) I C=-500mA , IB=-50mA -1.2 V Transition Frequency f T VCE=-6V,IC=-20mA,f=30MHz 150 MHz CLASSIFICATION OF hFE Rank D E F G H I J Range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 Parameter Symbol Value Unit Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage V CEO -25 V Emitter-Base Voltage V EBO -5 V Collector Current-Continuous I C -0.5 A Collector Power Dissipation P D 625 mW Thermal Resistance Junction to Ambient RӨJA 200 °C /W Junction Temperature T J 150 °C Storage Temperature T stg -55-150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HCS9012(PNP) GENERAL PURPOSE TRANSISTOR Typical Characteristics -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -0 -300 - 600 -900 -1200 -10 -100 -1 -10 -100 100 -0.1 -1 -1 0 0 25 50 75 100 125 150 100 200 300 400 500 600 700 -1 -1 0- 100 -400 -800 -1200 -1 -1 0- 100 -10 -100 -1 -1 0 -100 100 COMMON EMITTER Ta=25ć -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) IC —— VCE IB=-2uA -4uA -500 VBE IC —— Ta=25ć Ta=100 ć COMMON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC COMMON EMITTER VCE=-6V Ta=25ć TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) 400 -20 VCB/VEBCob/Cib —— REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Cib Cob f=1MHz I E=0/IC=0 Ta=25 ć PC —— T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )ć fT — — -500 Ta=100 ć Ta=25ć /g533=10 ICVBEsat — — BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) -500 -500 /g533=10 T a=25ć T a=100 ć ICVCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25ć Ta=100ć hFE —— IC 500 -500 VCE=-1V
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCS9012(PNP) GENERAL PURPOSE TRANSISTOR Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCS9012(PNP) GENERAL PURPOSE TRANSISTOR