HCS8550 HOTTECH | Alldatasheet

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HC S8550(PNP) GENERAL PURPOSE TRANSISTOR R EPLACEMENT TYPE : S8550 FEA TUR ES  PNP Silicon Epitaxial Planar Transistor  for switching and amplifier applications.  Complimentary to HCS80 50(NPN) M AXIMUM RATINGS (T A =25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit C ollector-Base Breakdown Voltage V CB O I C =-100μA, I E =0 -40 V C ollector-Emitter Breakdown Voltage V CE O I C =-100μA, IB =0 -25 V Emitter-Base Breakdown Voltage V EBO I E =-100μA , I C =0 -5 V C ollector C ut-off C urrent I CB O V CB =-40V , IE =0 -0.1 μA Emitter Cut-off C urrent I EBO V EB =-5V , IC =0 -0.1 μA DC C urrent G ain hFE(1) V CE =-1V , IC =-50mA 85 400 hFE (2) V CE =-1V , IC =-500mA 50 C ollector-Emitter Saturation Voltage V C E(sat) I C =-500mA , IB =-50mA -0.6 V Base-Emitter Saturation Voltage V BE(sat) I C =-500m A , IB =-50mA -1.2 V Transition Frequency f T V CE =-6V , IC =-20m A f=30MHz 150 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0% CLA SS IFICATION OF hFE Ra nk B C D E R ange 80-160 120-200 160-300 300-400 Parameter Symbol V alue Un it Collector-Base Voltage V CBO - 40 V C ollector-Emitter Voltage V CEO - 25 V Emitter-Base Voltage V EBO -5 V C ollector Current-Continuous I C - 500 mA Collector Power Dissipation P C 625 mW Junction Temperature T J 150 °C Storage Temperature T stg - 55 to +150 °C TO -92 1:EMITTER 2:BASE 3:COLLECTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4

HC S8550(PNP) GENERAL PURPOSE TRANSISTOR Typical C haracteristics ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4

HC S8550(PNP) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015

HC S8550(PNP) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4