HCPS2222 HOTTECH | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCPS2222(NPN) REPLACEMENT TYPE : MPS2222 FEA TURES  General Purpose Switching and Amplification MAXIMUM RATINGS (T A=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbo Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C=0.01mA, IE=0 60 V Collector-Emitter Breakdown Voltage V CEO I C=10mA, IB=0 30 V Emitter-Base Breakdown Voltage V EBO I E=0.01mA , IC=0 5 V Collector Cut-off Current I CBO V CB=50V , IE=0 0.01 μA Collector Cut-off Current I CEX V CE=60V,VEB(OFF)=3V 0.01 uA Emitter Cut-off Current I EBO V EB=3V , IC=0 0.1 μA DC Current Gain hFE(1) V CE=10V , IC=150mA 100 300 hFE(2) V CE=10V , IC=0.1mA 35 hFE(3) V CE=10V , IC=500mA 30 Collector-Emitter Saturation Voltage V CE(sat) I C=500mA , IB=50mA 1 V Base-Emitter Saturation Voltage V BE(sat) I C=500mA , IB=50mA 2 V Collector Output Capacitance C OB V CB=10V,IE=0,f=100MHz 8 pF Transition Frequency f T V CE=20V,IC=20mA,f=100MHz 250 MHz Delay Time t D V CC=30V,VBE(OFF)=-0.5V IC=150mA ,IB1=15mA 10 nS Rise Time t R 25 nS Storage Time t S V CC=30V, IC=150mA IB1=IB2=15mA 225 nS Fall Time t F 60 nS CLASSIFICATION OF hFE Rank L H Range 100-200 200-300 Parameter Symbol Value Unit Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 30 V Emitter-Base Voltage V EBO 5 V Collector Current-Continuous I C 0.6 A Collector Power Dissipation P C 625 mW Junction Temperature T J 150 °C Thermal Resistance Junction to Ambient RӨJA 200 °C/W Storage Temperature T stg -55~+150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR SWITCHING TRANSISTOR

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 2 / 4 HCPS2222(NPN) Typical Characteristics SWITCHING TRANSISTOR 0.1 1 10 100 0.1 100 11 0 100 150 200 250 300 0.1 1 10 100 100 1000 0 25 50 75 100 125 150 125 250 375 500 625 750 1 10 100 0.0 0.4 0.8 1.2 11 0 100 0.0 0.1 0.2 0.3 0.4 0.5 0 102 03 04 05 0 120 160 200 f=1MHz IE=0/IC=0 Ta=25ć VCB/ VEBCob/ Cib — — Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER VCE=10V 600 Ta=100ć Ta=25ć COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) COMMON EMITTER VCE=20V Ta=25ć 7030 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=10V 600 IC Ta=25ć Ta=100ć DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) PC — — T a COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )ć 600 /g533=10 ICVBEsat — — Ta=100ć Ta=25ć BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) ICfT — — VBEIC — — hFE —— 600 /g533=10 Ta=100ć Ta=25ć ICVCEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25ć1mA 900uA 800uA 700uA 600uA 500uA 400uA 300uA 200uA IB=100uA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V)

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCPS2222(NPN) Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 SWITCHING TRANSISTOR

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCPS2222(NPN) SWITCHING TRANSISTOR