HCM28S

HCM28S HOTTECH | Alldatasheet

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HCM28S( NPN ) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : M28S FEA TURES  High D C Current Gain and Large Current Capability MAXIMUM RATINGS (T A =25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Parameter Symbo Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C =100μA, IE =0 40 V Collector-Emitter Breakdown Voltage V CEO I C =1m A, IB =0 20 V Emitter-Base Breakdown Voltage V EBO I E =100μA , IC =0 6 V Collector C ut-off C urrent I CBO V CB =40V , IE =0 0.25 μA Emitter Cut-off C urrent I EBO V EB =5V , IC =0 0.1 μA DC C urrent G ain hFE(1) V CE =1V , IC =1mA 290 hFE(2) V CE =1V , IC =100mA 300 1000 hFE(3) V CE =1V , IC =300mA 300 hFE(4) V CE =1V , IC =500mA 300 Collector-Emitter Saturation Voltage V CE(sat) I C =600mA , IB =20mA 0.55 V Transition Frequency f T V CE =10V , IC =50mA f=30MHz 100 MHz CLA SS IFICATION OF hFE Ra nk B C D Ra nge 300-550 500-700 650-1000 Parameter Symbol V alue Un it Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 6 V Collector Current-Continuous I C 1000 mA Collector Power Dissipation P C 625 mW Junction Temperature T J 150 °C Storage Temperature T stg - 55 to +150 °C Thermal Resistance, junction to Ambient RӨJA 200 °C /mW TO -92 1:EMITTER 2:COLLECTOR 3:BASE ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 5

HCM28S( NPN ) GENERAL PURPOSE TRANSISTOR Typical C haracteristics ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 5 0.1 100 1000 11 0 1 00 100 1000 0 25 50 75 100 125 150 100 150 200 250 1 10 100 1000 100 1000 0.1 1 10 100 1000 1 10 100 1000 100 1000 012345 100 120 140 160 1 10 100 1000 100 1000 VCE=1V COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) ICVBE —— Ta=100℃ Ta=25℃ ICfT —— TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I VCE=10V Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE T ℃ PC —— Ta COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) ICVBEsat —— β=30 Ta=100℃ Ta=25℃ 2000 Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) VCB / VEBC ob/ Cib —— f=1MHz IE=0/IC=0 Ta=25 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=100℃ Ta=25℃ VCE=1V IChFE —— 2000 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA IB=20uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic COMMON EMITTER Ta=25 β=30 Ta=100℃ Ta=25℃ COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ICVCEsat ——

HCM28S( NPN ) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 5 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015

HCM28S( NPN ) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 5

H CM28S (NPN ) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 5 / 5