HCD965 HOTTECH | Alldatasheet

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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCD965(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : D965 FEA TURES  Audio Amplifier Flash Unit of Camera  Switching Circuit MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C=0.1mA, IE=0 42 V Collector-Emitter Breakdown Voltage V CEO I C=1mA, IB=0 22 V Emitter-Base Breakdown Voltage V EBO I E=10uA , IC=0 6 V Collector Cut-off Current I CBO V CB=30V , IE=0 0.1 μA Emitter Cut-off Current I EBO V EB=6V , IC=0 0.1 μA DC Current Gain hFE(1) V CE=2V , IC=0.15mA 150 hFE(2) V CE= 2V,IC= 500 mA 340 2000 HFE(3) V CE=2V, IC= 2A 150 Collector-Emitter Saturation Voltage V CE(sat) I C=3000mA,IB=100mA 0.35 V Transition Frequency f T VCE=6V,IC=50mA,f=30MHz 150 MHz CLASSIFICATION OF hFE Rank R T Y Range 340-600 560-950 900-2000 Parameter Symbol Value Unit Collector-Base Voltage V CBO 42 V Collector-Emitter Voltage V CEO 22 V Emitter-Base Voltage V EBO 6 V Collector Current-Continuous I C 5 A Collector Power Dissipation P D 750 mW Thermal Resistance From Junction to Ambient ROJA 166.7 °C/W Junction Temperature T J 150 °C Storage Temperature T stg -55~150 °C TO-92 1:EMITTER 2:COLLECTOR 3:BASE

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HCD965(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics 0 200 400 600 800 1000 1200 0.1 100 1000 0.1 1 10 100 1000 0 2 55 07 5 1 00 125 150 100 200 300 400 500 600 700 800 900 10 100 100 1000 1 10 100 1000 100 1000 1 10 100 1000 100 1000 1 10 100 1000 100 1000 123456789 1 0 200 400 600 800 1000 1200 1400 1600 1800 2000 5000 T a=100 ć T a=25ć VCE=2V ICIC — — COLLCETOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/ IC=0 Ta=25 ć VCB/ VEBCob/ Cib — — CAPACITANCE C (pF) Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )ć PC — — TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=6V Ta=25 ć VBE fT — — 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) /g533=30 Ta=25ć Ta=100ć ICVCEsat — — 5000 /g533=30 0.3 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) Ta=25ć Ta=100ć 2000 5000 ICVBEsat — — Ta=100 ć Ta=25 ć DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) VCE=2V IChFE —— 0.15 1500 5000 COMMON EMITTER T a=25ć IB=4mA IB=3.5mA IB=3mA IB=2.5mA IB=2mA IB=1.5mA IB=1mA IB=0.5mA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V)

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCD965(NPN) GENERAL PURPOSE TRANSISTOR Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCD965(NPN) GENERAL PURPOSE TRANSISTOR