HCD1616 HOTTECH | Alldatasheet
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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCD1616(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : 2SD1616 FEA TURES Low VCE(sat) Complementary Transistor with the HCB1116 MAXIMUM RATINGS (T A=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C=0.01mA , IE=0 60 V Collector-Emitter Breakdown Voltage V CEO I C=2mA, IB=0 50 V Emitter-Base Breakdown Voltage V EBO I E=0.01mA , IC=0 6 V Collector Cut-off Current I CBO V CB=60V , IE=0 0.1 μA Emitter Cut-off Current I EBO V EB=6V , IC=0 0.1 μA DC Current Gain hFE(1) V CE=2V , IC=100mA 135 600 hFE(2) V CE=2V, IC=1A 81 Collector-Emitter Saturation Voltage V CE(sat) I C=1A , IB=50mA 0.3 V Base-Emitter Saturation Voltage V BE(sat) I C=1A , IB=50mA 1.2 V Base-Emitter Voltage V BE V CE=2V, IC=50mA 0.6 0.7 V Collector Output Capacitance C OB V CB=10V, IE=0, f=1MHz 19 pF Transition Frequency f T V CE=2V , IC=100mA 100 MHz CLASSIFICATION OF hFE Rank L K U Range 135-270 200-400 300-600 Parameter Symbol Value Unit Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 6 V Collector Current-Continuous I C 1 A Collector Power Dissipation P C 750 mW Thermal Resistance Junction to Ambient RӨJA 166 °C/W Junction Temperature T J 150 °C Storage Temperature T stg -55~+150 °C TO-92 1:EMITTER 2:COLLECTOR 3:BASE
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HCD1616(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics 0.1 1 10 100 1000 20 40 60 80 100 100 150 200 250 1 10 100 1000 100 1000 0 25 50 75 100 125 150 200 400 600 800 1000 1200 0.1 1 10 100 1000 200 400 600 800 1000 200 400 600 800 1000 100 150 200 02468 1 0 0.0 0.1 0.2 0.3 0.4 0.5 200 400 600 800 1000 0.1 100 1000 100 f=1MHz I E=0 / IC=0 Ta=25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib —— Cib Cob TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=2V Ta=25 o C IC fT —— VCE= 2V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ Ta=100℃ β=20 ICVBEsat —— Ta=25℃ Ta=100℃ β=20 VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) COMMON EMITTER T a=25℃ 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA IB=0.1mA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) Static Characteristic VCE=2V Ta=25℃Ta=100 o C BASE-EMITTER VOLTAGE VBE(mV) COLLECTOR CURRENT IC (mA) IC——VBE
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCD1616(NPN) GENERAL PURPOSE TRANSISTOR Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCD1616(NPN) GENERAL PURPOSE TRANSISTOR