HCC945 HOTTECH | Alldatasheet
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HCC945(NPN) GENERAL PURPOSE TRANSISTOR R EP LACEMENT TYPE : C945 FEA TUR ES Excellent hFE linearity Low noise Complementary to HCA733 M AXIMUM RATINGS (T A =25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Parameter Symbol Test conditions Min Max Unit C ollector-Base Breakdown Voltage V CB O I C =1m A , IE =0 60 V Collector-Emitter Breakdown Voltage V CE O I C =100μA, IB =0 50 V Emitter-Base Breakdown Voltage V EBO I E =100μA , IC =0 5 V C ollector C ut-off Current I CB O V CB =60V , IE =0 0.1 μA Emitter Cut-off Current I EB O V EB =5V , IC =0 0.1 μA DC C urrent G ain hFE(1) V CE =6V , IC =1mA 70 700 hFE(2) V CE =6V , IC =0.1mA 40 C ollector-Emitter Saturation Voltage V C E(sat) I C =100m A , IB =10mA 0.3 V Base-Emitter Saturation Voltage V BE(sat) I C =100mA , IB =10mA 1 V Transition Frequency f T V CE =6V , IC =10m A f=30M Hz 200 MHz C ollector output capacitance C ob V CB =10V,IE =0, f=1MHz 3 pF N oise figure NF V CE =6V,IC =0.1mA RG=10kΩ, f=1MHz 10 dB Parameter Symbol V alue Un it C ollector-Base Voltage V CB O 60 V Collector-Emitter Voltage V CE O 50 V Emitter-Base Voltage V EBO 5 V C ollector Current-Continuous I C 150 mA C ollector Power Dissipation P C 400 mW Junction Temperature T J 125 °C Storage Temperature T stg - 55 to +150 °C TO -92 1:EMITTER 2:COLLECTOR 3:BASE ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4
HCC945(NPN) GENERAL PURPOSE TRANSISTOR Typical C haracteristics ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 0.1 1 10 100 -0.1 -1 -10 -100 100 0.1 1 10 100 100 1000 0 25 50 75 100 125 100 200 300 400 500 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 100 02468 1 0 1 2 500 f=1MHz I E=0 / IC=0 Ta=25℃ REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBC ob / Cib —— Cib Cob TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=6V Ta=25℃ ICfT —— 150 VCE= 6V Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta 150 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ Ta=100℃ β=10 ICVBEsat —— 300 150 Ta=25℃ Ta=100℃ β=10 VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) COMMON EMITTER T a=25℃ 20uA 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA IB=2uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic
HCC945(NPN) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015
HCC945(NPN) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4