HCC2001 HOTTECH | Alldatasheet
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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCC2001(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : 2SC2001 FEA TURES High h FE and Low VCE(sat) HFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C=100uA,IE=0 30 V Collector-Emitter Breakdown Voltage V CEO I C=10mA,IB=0 25 V Emitter-Base Breakdown Voltage V EBO I E=100uA,IC=0 5 V Collector Cut-off Current I CBO V CB=30V,IE=0 0.1 μA Collector Cut-off Current I CEO V CE=20V,IB=0 0.1 μA Emitter Cut-off Current I EBO V EB=5V,IC=0 0.1 μA DC Current Gain hFE(1) V CE=1V,IC=100mA 90 400 Collector-Emitter Saturation Voltage V CE(sat) I C=700mA,IB=70mA 0.6 V Base-Emitter Saturation Voltage V BE(sat) I C=700mA,IB=70mA 1.2 V Transition Frequency f T VCE=6V,IC= 10mA,f=30MHz 50 MHz CLASSIFICATION OF hFE Rank M L K Range 90-180 135-270 200-400 Parameter Symbol Value Unit Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 5 V Collector Current-Continuous I C 700 mA Collector Power Dissipation P C 600 mW Junction Temperature T J 150 °C Storage Temperature T stg -55-150 °C TO-92 1:EMITTER 2:COLLECTOR 3:BASE
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HCC2001(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics 0.1 1 10 100 0 25 50 75 100 125 150 150 300 450 600 750 200 400 600 800 1000 1200 0.1 100 1 10 100 100 1000 0.1 1 10 100 100 1000 120 150 0.1 1 10 100 200 400 600 800 1000 1200 0.1 1 10 100 100 1000 C ob C ib f=1MHz I E=0/ IC=0 Ta=25 o C CAPACITANCE C (pF) REVERSE VOLTAGE V (V) VCB / VEBC ob/ Cib —— COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta 700 Ta=25℃Ta=100℃ COMMON EMITTER V CE=1V COLLCETOR CURRENT IC (mA) BASE-EMITER VOLTAGE V BE (mV) fT —— VBEIC —— COMMON EMITTER V CE=6V Ta=25 o C TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE=1V Ta=25 o C Ta=100 o C IC DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 700 Static Characteristic COMMON EMITTER T a=25℃ 500uA 450uA 400uA 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) IC 700 β=10 Ta=100℃ Ta=25℃ ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) hFE —— 700 Ta=100℃ Ta=25℃ β=10 ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA)
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCC2001(NPN) GENERAL PURPOSE TRANSISTOR Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCC2001(NPN) GENERAL PURPOSE TRANSISTOR