HCC1008 HOTTECH | Alldatasheet
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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@ heketai.com 1 / 4 HCC1008(NPN) GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : 2SC1008 FEA TURES General Purpose Switching and Amplification MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V CBO I C=0.1mA,IE=0 80 V Collector-Emitter Breakdown Voltage V CEO I C=10mA,IB=0 60 V Emitter-Base Breakdown Voltage V EBO I E=0.01mA,IC=0 8 V Collector Cut-off Current I CBO V CB=60V,IE=0 0.1 μA Emitter Cut-off Current I EBO V EB=5V,IC=0 0.1 μA DC Current Gain h FE(1) V CE=2V,IC=50mA 40 400 Collector-Emitter Saturation Voltage V CE(sat) I C=500mA,IB=50mA 0.4 V Base-Emitter Saturation Voltage V BE(sat) I C=500mA,IB=50mA 1.1 V Collector Output Capacitance C OB V CB=10V,IC=0, f=1MHz 8 pF Transition Frequency f T V CE=10V, IC=50mA 30 MHz CLASSIFICATION OF hFE Rank R O Y G Range 40-80 70-140 120-240 200-400 Parameter Symbol Value Unit Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 8 V Collector Current-Continuous I C 700 mA Collector Power Dissipation P C 800 mW Junction Temperature T J 150 °C Thermal Resistance Junction to Ambient RӨJA 156 °C/W Storage Temperature T stg -55~+150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 4 HCC1008(NPN) GENERAL PURPOSE TRANSISTOR Typical Characteristics 0.1 1 10 100 1000 200 400 600 800 1000 0.1 100 0 25 50 75 100 125 150 200 400 600 800 1000 1200 0.1 1 10 100 200 400 600 800 1000 0.1 1 10 100 100 1000 0.1 1 10 100 100 1000 0123456789 1 0 0.00 0.05 0.10 0.15 0.20 0.25 CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Cob Cib f=1MHz I E=0/IC=0 Ta=25ć VCB/ VEBCob/ Cib —— Ta=1 00ć Ta=2 COLLCETOR CURRENT IC (mA) BASE-EMITER VOLTAGE VBE (mV) IC VBE COMMON EMITTER VCE=2V COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE T ( )ć PC —— T a 700 700700 700 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) /g533=10 Ta=100ć Ta=25ć ICVBEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ICVCEsat —— Ta=100ć Ta=25ć /g533=10 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE=2V Ta=25ć Ta=100ć IChFE —— 1mA 900uA 800uA 700uA 600uA 500uA 400uA 300uA 200uA IB=100uA COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COMMON EMITTER T a=25ć Static Characteristic
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 4 HCC1008(NPN) GENERAL PURPOSE TRANSISTOR Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 4 HCC1008(NPN) GENERAL PURPOSE TRANSISTOR