HCBC546 HOTTECH | Alldatasheet

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H CBC546/HCBC547/HCBC548 (NPN) G ENERAL PURPOSE TRANSISTOR R EPLACEMENT TYPE : BC546/BC547/BC548 FEA TU R ES  Low current  High Voltage  Complement to HC BC556 /HC BC557 /HC BC558 MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage BC546 V CBO V BC547 50 BC548 30 C ollector-Emitter Voltage BC546 V CEO V BC547 45 BC548 30 Emitter-Base Voltage BC546 V EBO 6 V BC547 6 V BC548 5 V Collector Current-Continuous IC 0.1 A Collector Power Dissipation P C 625 mW Thermal Resistance from Junction to Ambient R θJA 200 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg - 55~+150 ℃ TO -92 1: COLLECTOR 2: BASE 3: EMITTER ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 5

H CBC546/HCBC547/HCBC548 (NPN ) GENERAL PURPOSE TRANSISTOR ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) CLA SS IFICATION OF hFE Ra nk 546A 547B 548C Ra nge 110-220 200-450 420-800 Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage BC546 V CBO I C = 0.1mA , IE =0 V BC547 50 BC548 30 Collector-Emitter Breakdown Voltage BC546 V CEO I C =1mA, IB =0 V BC547 45 BC548 30 Emitter-Base Breakdown Voltage BC546 V EBO I E =10μA, IC =0 V BC547 6 BC548 5 Collector C ut-off C urrent BC546 ICBO V CB =70V, IE =0 0.1 μA BC547 V CB =50V, IE =0 0.1 μA BC548 V CB =30V, IE =0 0.1 μA Collector C ut-off C urrent BC546 ICEO V CE =60V, IB =0 0.1 μA BC547 V CE =45V, IB =0 0.1 μA BC548 V CE =30V, IB =0 0.1 μA Emitter Cut-off C urrent I EBO VE B =5V, IC =0 0.1 μA DC C urrent G ain h FE V CE =5V, IC =2mA 110 800 Collector-Emitter Saturation Voltage V CE(sat) I C =100mA, IB =5mA 0.3 V Base-Emitter Saturation Voltage V BE(sat) I C =100mA, IB =5mA 1.1 V Base-Emitter Voltage V BE V CE =5V, IC =2mA 0.58 0.7 V V CE =5V, IC =10mA 0.75 V Collector O utput C apacitance C ob V CB =10V, IE =0, f=1MHz 4.5 pF Transition Frequency f T V CE =5V, IC =10mA, f=100MHz 150 MHz ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2 / 5

H CBC546/HCBC547/HCBC548 (NPN) GENERAL PURPOSE TRANSISTOR Typical C haracteristics ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3 / 5 0.1 1 10 100 400 600 800 1000 0 25 50 75 100 125 150 125 250 375 500 625 750 0.1 1 10 100 100 1000 1 10 100 100 1000 10000 300 600 900 1200 0.1 100 01234567 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 β=20 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=20 ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 5V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC —— VBE T a=25℃ Ta=100℃ COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 10.0uA 9.0uA 8.0uA 7.0uA 6.0uA 5.0uA 2.0uA 3.0uA 4.0uA IB=1.0uA 0.1 1 10 100 400 600 800 1000 0 25 50 75 100 125 150 125 250 375 500 625 750 0.1 1 10 100 100 1000 1 10 100 100 1000 10000 300 600 900 1200 0.1 100 01234567 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 β=20 ICVBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=20 ICVCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE= 5V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (mV) IC —— VBE T a=25℃ Ta=100℃ COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 10.0uA 9.0uA 8.0uA 7.0uA 6.0uA 5.0uA 2.0uA 3.0uA 4.0uA IB=1.0uA

H CBC546/HCBC547/HCBC548 (NPN) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4 / 5 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e 1.270 TY P. 0.050 TY P. e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015

H CBC546/HCBC547/HCBC548 (NPN) GENERAL PURPOSE TRANSISTOR ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 5 / 5