H55TBXX HIRECT | Alldatasheet
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PHASE CONTROL THYRISTOR H55TBXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 125 200-1600 V VDRM Repetitive peak off-stage voltage 125 200-1600 V IRRM Repetitive peak reverse current V = VRRM 125 10 mA IDRM Repetitive peak off-state current V = VRRM 125 10 mA dV/dT Rep. rate of change of voltage @ 67%VDRM 125 600 V/μS CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 750C 55 A IRMS RMS on-state current 85 A ITSM Surge on-state current 900 A I2t I2t Sine wave, 10mS without reverse voltage 125
4050 A2S
VT Peak on-state voltage drop On-state current = 175A 125 1.82 V V0 Threshold voltage 125 0.90 V R0 On-state slope resistance 125 4.35 m Ω di/dt Repetitive rate of rise of current dIG/dT = 1A/µS VGK = 1V 125 120 A/μS TRIGGERING PARAMETERS IGT Gate trigger current VD = 5V 25 150 mA VGT Gate trigger voltage 25 2.50 V IL Latching Current VD = 5V 25 400 mA IH Holding Current VD = 5V 25 300 mA PG –PEAK Maximum Peak Gate Power Pulse width 100μSec 30 W di/dt Repetitive rate of rise of current 120 A/μS VFGM Maximum forward gate voltage 12 V IFGM Maximum forward gate current 10 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 0.60 0C/W RTH (C-HK) Thermal impedance Case to heatsink 0.20 0C/W TJ Maximum Permissible junction temperature 125 0C TSTG Storage temperature range -40 - 125 0C F Mounting Torque 4 NM W Weight 45 gms HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 1 of 6
PHASE CONTROL THYRISTOR H55TBXX All dimensions in mm HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 2 of 6
PHASE CONTROL THYRISTOR H55TBXX On State Power Loss 100 110 120 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 It(av) - A Pt(av) - W 600 1200 1800 Maximum Permissible Case Temp 100 120 140 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 It(av) - A Tcase (0C) 600 1200 1800 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 3 of 6
PHASE CONTROL THYRISTOR H55TBXX Max non repetitive Surge Current 100 200 300 400 500 600 700 800 900 1000 0.01 0.1 1 10 Time in Sec Itsm - A Transient Thermal Impedance Junction to Case 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 4 of 6
PHASE CONTROL THYRISTOR H55TBXX On State Characteristics 100 120 140 160 180 200 220 240 260 280 00 . 511 . 5 22 . 53 Vt - V It(av) - A Gate Trigger Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 IG (av) - A VG(V) - V VGT IGT 250C IGD 30 W (0.1ms PO(tp) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 5 of 6
PHASE CONTROL THYRISTOR H55TBXX Ordering Information: - H 55 TB XX Hirect make Thyristor I F(AV) = 55A TB – with a Pigtail V RRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6