H285TBXX HIRECT | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

PHASE CONTROL THYRISTOR H285TBXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 125 200-600 V VDRM Repetitive peak off-stage voltage 125 200-600 V IRRM Repetitive peak reverse current V = VRRM 125 50 mA IDRM Repetitive peak off-state current V = VRRM 125 50 mA CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 820C 285 A IRMS RMS on-state current 450 A ITSM Surge on-state current 6.50 kA I2t I2t Sine wave, 10mS without reverse voltage 125 211 kA VT Peak on-state voltage drop On-state current = 1 kA 125 1.70 V V0 Threshold voltage 125 0.80 V R0 On-state slope resistance 125 0.75 m Ω TRIGGERING PARAMETERS IGT Gate trigger current VD = 5V 25 200 mA VGT Gate trigger voltage 25 2.00 V IL Latching Current VD = 5V 25 600 mA PG –PEAK Maximum Peak Gate Power Pulse width 100μSec 130 W di/dt Repetitive rate of rise of current 150 A/ μSec VFGM Maximum forward gate voltage 12 V IFGM Maximum forward gate current 30 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 0.113 0C/W RTH (C-HK) Thermal impedance Case to heatsink 0.04 0C/W TJ Maximum Permissible junction temperature 125 0C TSTG Storage temperature range -40 - 125 0C F Mounting Torque 26 NM W Weight 320 gms HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 1 of 6

PHASE CONTROL THYRISTOR H285TBXX All dimensions in mm HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 2 of 6

PHASE CONTROL THYRISTOR H285TBXX On State Power Loss 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 350 400 450 500 It (av ) Pt(av) - W 600 1200 1800 DC Maximum Permissible Case Temp 100 120 140 0 40 80 120 160 200 240 280 320 360 400 440 480 It(av ) A Tcase (0C) 600 1200 1800 DC HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 3 of 6

PHASE CONTROL THYRISTOR H285TBXX Max non repetitive Surge Current 1000 2000 3000 4000 5000 6000 7000 0.01 0.1 1 10 Time in Sec Itsm (A) Transient Thermal Impedance Junction to Case 0.02 0.04 0.06 0.08 0.1 0.12 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 4 of 6

PHASE CONTROL THYRISTOR H285TBXX On State Characteristics 200 400 600 800 1000 1200 1400 1600 00 . 511 . 5 22 . 53 Vt (V) It(av) A Gate Trigger Characteristics 0.1 100 0.01 0.1 1 10 100 IG (av) - A VG(V) - V 120W (0.1mS)250C HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 5 of 6

PHASE CONTROL THYRISTOR H285TBXX Ordering Information: - H 285 TB XX Hirect make Thyristor I F(AV) = 285A TB – with a Pigtail V RRM = XX * 100 e.g.6 * 100 =600V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6