H16TB HIRECT | Alldatasheet
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PHASE CONTROL THYRISTOR H16TB/TLXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 125 200-1600 V VDRM Repetitive peak off-stage voltage 125 200-1600 V IRRM Repetitive peak reverse current V = VRRM 125 15 mA IDRM Repetitive peak off-state current V = VRRM 125 15 mA dV/dT Rep. rate of change of Voltage @ 67%VDRM 125 600 V/μS CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 850C 16 A IRMS RMS on-state current 25 A ITSM Surge on-state current 350 A I2t I2t Sine wave, 10mS without reverse voltage 125
610 A2S
VT On-state voltage On-state current = 53A 125 2.05 V V0 Threshold voltage 125 1.10 V r0 On-state slope resistance 125 16 m Ω di/dt Repetitive rate of rise of current dIG/dT = 1A/µS VGK = 1V 125 100 A/μS TRIGGERING PARAMETERS IGT Gate trigger current VD = 5V 25 100 mA VGT Gate trigger voltage 25 2.50 V IL Latching Current VD = 5V 25 300 mA IH Holding Current VD = 5V 25 200 mA PG –PEAK Maximum Peak Gate Power Pulse width 100μS 30 W VFGM Maximum forward gate voltage 12 V IFGM Maximum forward gate current 10 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 1.40 0C/W RTH (C-HK) Thermal impedance Case to heatsink 0.30 0C/W TJ Maximum Permissible junction temperature 125 0C TSTG Storage temperature range -40 - 125 0C F Mounting Torque 2 NM W Weight For TB For TL 30 15 gms HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 1 of 6
PHASE CONTROL THYRISTOR H16TB/TLXX H16TLXX H16TBXX All dimensions in mm HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 2 of 6
PHASE CONTROL THYRISTOR H16TB/TLXX On State Power Loss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 It (av) - A Pt(av) - W 600 120 1800 Maximum Allowable Case Temp 100 120 140 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 It(av) - A Tcase (0C) 120600 1800 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 3 of 6
PHASE CONTROL THYRISTOR H16TB/TLXX Max non repetitive Surge Current 100 150 200 250 300 350 400 0.01 0.1 1 10 Time in Sec Itsm (A) Transient Thermal Impedance Junction to Case 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 1.5 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) - 0C HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 4 of 6
PHASE CONTROL THYRISTOR H16TB/TLXX On State Characteristics 00 . 5 11 . 5 22 . 5 33 . 5 Vt (V) It(av) - A Gate Trigger Characteristics 0.1 100 0.001 0.01 0.1 1 10 100 IG (av) - A VG - V VG IGT 250C IGD 30 W (0.1ms PO(tp) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 5 of 6
PHASE CONTROL THYRISTOR H16TB/TLXX Ordering Information: - H 16 TB / TL XX Hirect make Thyristor IF(AV) = 16A TB – with a Pigtail TL – with Lug VRRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6