H55S1222EFP-60E

H55S1222EFP-60E HYNIX | Alldatasheet

Document overview

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Technical content

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jun. 2008 1 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O Specification of 128M (4Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 1,048,576 x32

Rev 1.0 / Jun. 2008 2 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Document Title 4Bank x 1M x 32bits Synchronous DRAM

Revision History

Revision No. History Draft Date Remark 0.1 Initial Draft Sep. 2007 Preliminary 0.2 - Define IDD specification Feb. 2008 Preliminary 1.0 -. Correct Temp range(p.9) -. Modify IDD Values(p.11 & p.12) Jun. 2008

Rev 1.0 / Jun. 2008 3 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series

DESCRIPTION

The Hynix H55S1222EFP is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs. The Hynix 128M Mobile SDRAM is 134,217,728-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the main memory applications which requires large memory density and high bandwidth. It is organized as 4banks of 1,048,576x32. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x32 Input/ Output bus. All the commands are latched in synchronization with the rising edge of CLK. The Mobile SDRAMs provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is ini- tiated at the end of the burst access. The Mobile SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, randon- access operation. Read and write accesses to the Hynix Mobile SDRAMs are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. A burst of Read or Write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule). The Hynix Mobile SDR also provides for special programmable options including Partial Array Self Refresh of full array, half array, quarter array Temperature Compensated Self Refresh of 45 or 85 degrees oC. The Hynix Mobile SDR has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implanted, it enables to automatically adjust refresh rate according to temperature without external EMRS command. Deep Power Down Mode is a additional operating mode for Mobile SDR. This mode can achieve maximum power reduction by removing power to the memory array within each Mobile SDR. By using this feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout flexibility. All inputs are LV-CMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal).

Rev 1.0 / Jun. 2008 4 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series INFORMATION for Hynix KNOWN GOOD DIE With the advent of Mullti-Chip package (MCPs), Package on Package (PoP) and system in a package (SiP) applications, customer demand for Known Good Die (KGD) has increased. Requirements for smaller form factors and higher memory densities are fueling the need for Wafer-level memory solu- tions due to their superior flexibility. Hynix Known Good Die (KGD) products can be used in packaging technologies such as systems-in-a-package (SIPs) and multi-chip packages (MCPs) to reduce the board area required, making them ideal for handheld PCs, and many other portable digital applications. Hynix Mobile DRAM will be able to containue its constant effort of enabling the Advanced package products of all appli- cation customers. - Please Contact Hynix Office for Hynix KGD product availability and informations.

Rev 1.0 / Jun. 2008 5 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series

FEATURES

• Standard SDRAM Protocol
• Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK)
• MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst Read or Write operation, a different bank is activated and burst Read or Write for that bank is performed - During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
• Power Supply Voltage : VDD / VDDQ = 1.7V to 1.95V
• LVCMOS compatible I/O Interface
• Low Voltage interface to reduce I/O power
• Programmable burst length: 1, 2, 4, 8 or full page
• Programmable Burst Type : sequential or interleaved
• Programmable CAS latency of 3 or 2
• Programmable Drive Strength
• Low Power Features - Programmable PASR(Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - Programmable DS (Drive Strength) - Deep Power Down Mode
• -25oC ~ 85oC or -30oC ~ 85oC Operation Temperature - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC
• Package Type : 90Ball FBGA

Rev 1.0 / Jun. 2008 6 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series 128Mb Mobile SDR SDRAM ORDERING INFORMATION Part Number Clock Fre- quency CAS LatencyOrganizationInterfaceOperation temperaturePackage H55S1222EFP-60E 166MHz 3 4banks x 1Mb x

32 LVCMOS Extended Temp

(-25oC ~ 85oC) 90 ball FBGAH55S1222EFP-75E 133MHz 3 H55S1222EFP-A3E 105MHz 3 H55S1222EFP-60M 166MHz 3 4banks x 1Mb x

32 LVCMOS Mobile Temp

(-30oC ~ 85oC) 90 ball FBGAH55S1222EFP-75M 133MHz 3 H55S1222EFP-A3M 105MHz 3

Rev 1.0 / Jun. 2008 7 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series BALL DESCRIPTION 91 2 3 4 6 7 8 TOP VIEW DQ DQ

24 VSS VDD DQ

28 VDDQ VSSQ VDDQ VSSQ DQ

20 VDDQ

18 VDDQ

31 NC NC DQ

16 VSSQ

3 A3 A2 DQM

2 VDD

1 A11

1 NC NC /CAS /WE DQM

A B C D E F G H J K VDDQ DQ

8 VSS VDD DQ

7 VSSQ

5 VDDQ

3 VDDQ

11 VDDQ VSSQ VDDQ VSSQ DQ

15 VSS VDD DQ

0 DQ2

L M N P R

Rev 1.0 / Jun. 2008 8 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series BALL DESCRIPTION SYMBOL TYPE DESCRIPTION CLK INPUT Clock : The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE INPUT Clock Enable : Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh CS INPUT Chip Select : Enables or disables all inputs except CLK, CKE, DQM0~DQM3 BA0, BA1 INPUT Bank Address : Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity A0 ~ A11 INPUT Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7 Auto-precharge flag : A10 RAS, CAS, WE INPUT Command Inputs : RAS, CAS and WE define the operation Refer function truth table for details DQM0 ~ DQM3 INPUT Data Mask:Controls output buffers in read mode and masks input data in write mode DQ0 ~ DQ31 I/O Data Input/Output:Multiplexed data input/output pin VDD/VSS SUPPLY Power supply for internal circuits VDDQ/VSSQ SUPPLY Power supply for output buffers NC - No connection

Rev 1.0 / Jun. 2008 9 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series ABSOLUTE MAXIMUM RATING Note1 - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC DC OPERATING CONDITION (TC= -25 to 85oC3) or -30 to 85oC 3) ) Note : 1. All Voltages are referenced to VSS = 0V 2. VDDQ must not exceed the level of VDD 3. - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC AC OPERATING TEST CONDITION (TC= -25 to 85oC1) or -30 to 85oC 1), VDD = 1.7V min to 1.95V max, VSS = 0V) Note1 - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC Parameter Symbol Rating Unit Case Temperature TC -25 ~ 85 1) oC -30 ~ 85 1) Storage Temperature TSTG -55 ~ 125 oC Voltage on Any Pin relative to VSS VIN, VOUT -1.0 ~ 2.6 V Voltage on VDD relative to VSS VDD -1.0 ~ 2.6 V Voltage on VDDQ relative to VSS VDDQ -1.0 ~ 2.6 V Short Circuit Output Current IOS 50 mA Power Dissipation PD 1 W Soldering Temperature . Time TSOLDER 260 . 20 oC . Sec Parameter Symbol Min Typ Max Unit Note Power Supply VoltageVDD 1.7 1.8 1.95 V 1 Power Supply VoltageVDDQ 1.7 1.8 1.95 V 1, 2 Input High VoltageVIH 0.8*VDDQ - VDDQ+0.3 V 1, 2 Input Low Voltage V IL -0.3 - 0.3 V 1, 2 Parameter Symbol Value Unit AC Input High/Low Level Voltage VIH / VIL 0.9*VDDQ/0.2 V Input Timing Measurement Reference Level VoltageVtrip 0.5*VDDQ V Input Rise/Fall Time tR / tF 1 ns Output Timing Measurement Reference Level VoltageVoutref 0.5*VDDQ V Output Load Capacitance for Access Time Measurement CL 30 pF

Rev 1.0 / Jun. 2008 10 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CAPACITANCE (TC= 25 oC, f=1MHz) DC CHARACTERRISTICS I (TC= -25 to 85oC5) or -30 to 85oC 5)) Note : 1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V. 2. DOUT is disabled. VOUT= 0 to 1.95V. 3. IOUT = - 0.1mA 4. IOUT = + 0.1mA 5. - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC Parameter Pin Symbol 6/H/S Unit Min Max Input capacitance CLK CI1 TBD TBD pF A0~A11, BA0, BA1, CKE, CS, RAS, CAS, WE, DQM0~3 CI2 TBD TBD pF Data input/output capacitanceDQ0 ~ DQ31 CI/O TBD TBD pF Parameter Symbol Min Max Unit Note Input Leakage CurrentILI -1 1 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH VDDQ-0.2 - V 3 Output Low Voltage VOL - 0.2 V 4

Rev 1.0 / Jun. 2008 11 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series DC CHARACTERISTICS II (TC= -30 to 85oC4) or -30 to 85oC 4), VDD = 1.7V min to 1.95V max, VSS = 0V) Note : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. See the tables of next page for more specific IDD6 current values. 3. Please contact Hynix office for more information and ability for DPD operation. Deep Power Down operation is a hynix optional function. 4. - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC Parameter Symbol Test Condition Speed UnitNote 166MHz 133MHz Operating Current IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL =0mA 50 45 mA 1 Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK = min 0.3 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 0.3 mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V mA IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 3 Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK = min 2 mA IDD3PS CKE ≤ VIL(max), tCK = ∞ 1.2 Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V mA IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 5 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL =0mA All banks active 60 55 mA 1 Auto Refresh Current IDD5 tRFC ≥ tRFC(min), 90 mA Self Refresh Current IDD6 CKE ≤ 0.2V See Next Page uA 2 Standby Current in Deep Power Down Mode IDD7 See p.49~50 10 uA 3

Rev 1.0 / Jun. 2008 12 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series DC CHARACTERISTICS III Notes: 1. VDD / VDDQ = 1.7V min to 1.95V max 2. Related numerical values in this 45oC are examples for reference sample value only. 3. With a on-chip temperature sensor of Mobile memory, auto temperature compensated self refresh will automatically adjust the interval of self-refresh operation according to ambient temperature variations. Temp. ( oC) Memory Array Unit

4 Banks 2 Banks 1 Bank

Rev 1.0 / Jun. 2008 13 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series AC CHARACTERISTICS I (AC operating conditions unless otherwise noted) Note : Condition - [TC= -30 to 85 oC, VDD = 1.7V min to 1.95V max, VSS = 0V] 1. Assume tR / tF (input rise and fall time) is 1ns. If tR & tF > 1ns, then [(tR+tF)/2-1]ns should be added to the parameter. to the parameter. 3. Output Load : 30pF+No termination

• AC high level input voltage / low level input voltage : 1.6 / 0.2V
• Input timing measurement reference level : 0.9V
• Transition time (input rise and fall time) : 0.5ns
• Output timing measurement reference level : 0.9V
• Output load : CL = 30pF Parameter Symbol 166MHz 133MHz 105MHz UnitNote Min Max Min Max Min Max System Clock Cycle Time CAS Latency=3 tCK3 6.0 1000 7.5 1000 9.5 1000 ns CAS Latency=2 tCK2 12 1000 12 1000 15 1000 ns Clock High Pulse Width t CHW 2.0 - 2.5 - 3.0 - ns 1 Clock Low Pulse Width tCLW 2.0 - 2.5 - 3.0 - ns 1 Access Time From Clock CAS Latency=3 tAC3 - 5.4 - 6.0 - 7.0 ns 2, 3 CAS Latency=2 tAC2 - 6.0 - 8.0 - 10 ns 2, 3 Data-out Hold Time tOH 2.6 - 2.6 - 2.6 - ns 3 Data-Input Setup Time tDS 2.0 - 2.0 - 3.0 - ns 1 Data-Input Hold Time tDH 1.0 - 1.0 - 1.5 - ns 1 Address Setup Time tAS 2.0 - 2.0 - 3.0 - ns 1 Address Hold Time tAH 1.0 - 1.0 - 1.5 - ns 1 CKE Setup Time tCKS 2.0 - 2.0 - 3.0 - ns 1 CKE Hold Time t CKH 1.0 - 1.0 - 1.5 - ns 1 Command Setup Time tCS 2.0 - 2.0 - 3.0 - ns 1 Command Hold Time tCH 1.0 - 1.0 - 1.5 - ns 1 CLK to Data Output in Low-Z Time tOLZ 1.0 - 1.0 - 1.0 - ns CLK to Data Output in High-Z Time CAS Latency=3 tOHZ3 5.4 6.0 7.0 ns CAS Latency=2 tOHZ2 6.0 8.0 10 ns Output Z = 50Ω 30pF Output Load Output tOH tAC tSETUP tHOLD tCH tCL tCK 1.6V 0.9V 0.2V 1.6V 0.9V 0.2V Input CLK

Rev 1.0 / Jun. 2008 14 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Note : Condition - [TC= -25 to 85 oC or -30 to 85 oC, VDD = 1.7V min to 1.95V max, VSS = 0V] - Extended Temp. : -25oC ~ 85oC - Mobile Temp. : -30oC ~ 85oC Parameter Symbol 166MHz 133MHz 105MHz UnitNote MinMax MinMax MinMax RAS Cycle Time t RC 60 - 72.5 - 90 - ns RAS to CAS Delay t RCD 18 - 22.5 - 28.5 - ns RAS Active Time tRAS 50 100K 50 100K 60 100K ns RAS Precharge Time tRP 18 - 22.5 - 28.5 - ns RAS to RAS Bank Active Delay t RRD 12 - 15 - 19 - ns AUTO REFRESH Period tRFC 80 - 80 - 80 - ns CAS to CAS Delay tCCD 1 - 1 - 1 - CLK Write Command to Data-In Delay tWTL 0 - 0 - 0 - CLK Data-in to Precharge Command tDPL 2 - 2 - 2 - CLK Data-In to Active Command tDAL tDPL +tRP DQM to Data-Out Hi-Z tDQZ 2 - 2 - 2 - CLK DQM to Data-In Mask tDQM 0 - 0 - 0 - CLK MRS to New Command tMRD 2 - 2 - 2 - CLK Precharge to Data Output High-Z CAS Latency=3 tPROZ3 3 - 3 - 3 - CLK CAS Latency=2 tPROZ2 2 - 2 - 2 - CLK Power Down Exit Time tDPE 1CLK tCKS 1CLK tCKS 1CLK tCKS - CLK Self Refresh Exit Time t XSR 120 - 120 - 120 - ns Refresh Time tREF - 64 - 64 - 64 ms

Rev 1.0 / Jun. 2008 15 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series FUNCTIONAL BLOCK DIAGRAM 1Mbit x 4banks x 32I/O Mobile Synchronous DRAM Sense AMP & I/O Gate Output Buffer & Logic Address Register Mode Register State MachineAddress Buffers Bank Select Row Active CAS Latency CLK CKE /CS /RAS /CAS /WE DQM 0 ~ 3 BA1 BA0 A11 Refresh DQ0 DQ31 Data Out Control Burst Length Extended Mode Register Self refresh logic & timer Internal Row Counter Row Pre Decoder Column Pre Decoder Column Add Counter Burst Counter Column Active Row decoders Row decoders Column decoders 1Mx32 Bank0 1Mx32 Bank1 1Mx32 Bank2 1Mx32 Bank3 Memory Cell Array Row decoders PASR

Rev 1.0 / Jun. 2008 16 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 0 0 0 OP Code 0 0 CAS Latency BT Burst Length OP Code A9 Write Mode

0 Burst Read and Burst Write

1 Burst Read and Single Write

0 Sequential

1 Interleave

A3 = 0 A3=1 0 0 0 1 1 0 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Full page Reserved CAS Latency A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 Reserved 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved

Rev 1.0 / Jun. 2008 17 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series BASIC FUNCTIONAL DESCRIPTION (Continued) Extended Mode Register BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 1 0 0 0 0 0 0 DS 0 0 PASR DS (Driver Strength) A6 A5 Driver Strength 0 0 Full 0 1 1/2 Strength 1 0 1/4 Strength 1 1 Reserved PASR (Partial Array Self Refresh) A2 A1 A0 Self Refresh Coverage 0 0 0 All Banks 0 0 1 Half of Total Bank (BA1=0 or Bank 0,1) 0 1 0 Quarter of Total Bank (BA1=BA0=0 or Bank 0) 0 1 1 Reserved 1 0 0 Reserved 1 0 1 Half of Bank 0(Bank 0 and Row Address MSB=0) 1 1 0 Quarter of Bank 0(Bank 0 and Row Address 2 MSBs=0) 1 1 1 Reserved

Rev 1.0 / Jun. 2008 18 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series COMMAND TRUTH TABLE Note : 1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high. 2. BA1/BA0 must be issued 0/0 in the mode register set, and 1/0 in the extended mode register set. Function CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10 /AP BA Note Mode Register SetH X L L L L X Op Code 2 Extended Mode Register Set H X L L L L X Op Code 2 No Operation H X L H H H X X Device Deselect H X H X X X X X Bank Active H X L L H H X Row Address V Read H X L H L H Column L V Read with Autoprecharge H X L H L H X Column H V Write H X L H L L X Column L V Write with Autoprecharge H X L H L L X Column H V Precharge All Banks H X L L H L X X H X Precharge selected BankH X L L H L X X L V Burst stop H X L H H L X X Data Write/Output EnableH X X X X Data Mask/Output DisableH X X V X Auto Refresh H H L L L H X X Self Refresh EntryH L L L L H X X Self Refresh ExitL H H X X X X X 1 L H H H Precharge Power Down Entry H L H X X X X X L H H H Precharge Power Down Exit L H H X X X X X L H H H Clock Suspend EntryH L H X X X X X L V V V Clock Suspend ExitL H X X X Deep Power Down EntryH L L H H L X X Deep Power Down ExitL H X X X

Rev 1.0 / Jun. 2008 19 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CURRENT STATE TRUTH TABLE (Sheet 1 of 4) Current State Command Action Notes CS RASCASWE BA0/ BA1 Amax-A0 Description Idle L L L L OP CODE Mode Register Set Set the Mode Register 14 L L L H X X Auto or Self Refresh Start Auto or Self Refresh 5 L L H L BA X Precharge No Operation L L H H BA Row Add. Bank Activate Activate the specified bank and row L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4 L H H H X X No Operation No Operation 3 H X X X X X Device Deselect No Operation or Power Down 3 Row Active L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Precharge 7 L L H H BA Row Add. Bank Activate ILLEGAL 4 L H L L BA Col Add. A10 Write/WriteAP Start Write : optional AP(A10=H) 6 L H L H BA Col Add. A10 Read/ReadAP Start Read : optional AP(A10=H) 6 L H H H X X No Operation No Operation H X X X X X Device Deselect No Operation Read L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Termination Burst: Start the Precharge L L H H BA Row Add. Bank Activate ILLEGAL 4 L H L L BA Col Add. A10 Write/WriteAP Termination Burst: Start Write(optional AP)8,9 L H L H BA Col Add. A10 Read/ReadAP Termination Burst: Start Read(optional AP)8 L H H H X X No Operation Continue the Burst

Rev 1.0 / Jun. 2008 20 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CURRENT STATE TRUTH TABLE (Sheet 2 of 4) Current State Command Action Notes CS RASCAS WE BA0/ BA1 Amax-A0 Description Read H X X X X X Device Deselect Continue the Burst Write L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge Termination Burst: Start the Precharge 10 L L H H BA Row Add. Bank Activate ILLEGAL 4 L H L L BA Col Add. A10 Write/WriteAP Termination Burst: Start Write(optional AP)8 L H L H BA Col Add. A10 Read/ReadAP Termination Burst: Start Read(optional AP)8,9 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst Read with Auto Precharge L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst Write with Auto Precharge L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 12 L H H H X X No Operation Continue the Burst H X X X X X Device Deselect Continue the Burst

Rev 1.0 / Jun. 2008 21 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CURRENT STATE TRUTH TABLE (Sheet 3 of 4) Current State Command Action Notes CS RASCAS WE BA0/ BA1 Amax-A0 Description Precharging L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge No Operation: Bank(s) idle after tRP L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12 L H H H X X No Operation No Operation: Bank(s) idle after tRP H X X X X X Device Deselect No Operation: Bank(s) idle after tRP Row Activating L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,12 L L H H BA Row Add. Bank Activate ILLEGAL 4,11,1 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,12 L H H H X X No Operation No Operation: Row Active after tRCD H X X X X X Device Deselect No Operation: Row Active after tRCD Write Recovering L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,13 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP Start Write: Optional AP(A10=H) L H L H BA Col Add. A10 Read/ReadAP Start Read: Optional AP(A10=H) 9 L H H H X X No Operation No Operation: Row Active after tDPL

Rev 1.0 / Jun. 2008 22 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CURRENT STATE TRUTH TABLE (Sheet 4 of 4) Current State Command Action Notes CS RASCAS WE BA0/ BA1 Amax-A0 Description Write RecoveringH X X X X X Device Deselect No Operation: Row Active after tDPL Write Recovering with Auto Precharge L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 4,13 L L H H BA Row Add. Bank Activate ILLEGAL 4,12 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 4,12 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 4,9,12 L H H H X X No Operation No Operation: Precharge after tDPL H X X X X X Device Deselect No Operation: Precharge after tDPL Refreshing L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 13 L L H H BA Row Add. Bank Activate ILLEGAL 13 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13 L H H H X X No Operation No Operation: idle after tRC H X X X X X Device Deselect No Operation: idle after tRC Mode Register Accessing L L L L OP CODE Mode Register Set ILLEGAL 13,14 L L L H X X Auto or Self Refresh ILLEGAL 13 L L H L BA X Precharge ILLEGAL 13 L L H H BA Row Add. Bank Activate ILLEGAL 13 L H L L BA Col Add. A10 Write/WriteAP ILLEGAL 13 L H L H BA Col Add. A10 Read/ReadAP ILLEGAL 13 L H H H X X No Operation No Operation: idle after 2 clock cycles H X X X X X Device Deselect No Operation: idle after 2 clock cycles

Rev 1.0 / Jun. 2008 23 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Note : 1. H: Logic High, L: Logic Low, X: Don't care, BA: Bank Address, AP: Auto Precharge. 2. All entries assume that CKE was active during the preceding clock cycle. 3. If both banks are idle and CKE is inactive, then in power down cycle 4. Illegal to bank in specified states. Function may be legal in the bank indicated by Bank Address, depending on the state of that bank. 5. If both banks are idle and CKE is inactive, then Self Refresh mode. 6. Illegal if tRCD is not satisfied. 7. Illegal if tRAS is not satisfied. 8. Must satisfy burst interrupt condition. 9. Must satisfy bus contention, bus turn around, and/or write recovery requirements. 10. Must mask preceding data which don't satisfy tDPL . 11. Illegal if tRRD is not satisfied 12. Illegal for single bank, but legal for other banks in multi-bank devices. 13. Illegal for all banks. 14. Mode Register Set and Extended Mode Register Set is same command truth table except BA1.

Rev 1.0 / Jun. 2008 24 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CKE Enable(CKE) Truth TABLE (Sheet 2 of 1) Current State CKE Command Action NotesPrevious Cycle Current CycleCS RAS CAS WE BA0, BA1 Amax- Self Refresh H X X X X X X X INVALID 1 L H H X X X X X Exit Self Refresh with Device Deselect 2 L H L H H H X X Exit Self Refresh with No Operation 2 L H L H H L X X ILLEGAL 2 L H L H L X X X ILLEGAL 2 L H L L X X X X ILLEGAL 2 L L X X X X X X Maintain Self Refresh Power Down H X X X X X X X INVALID 1 L H H X X X X X Power Down mode exit, all banks idle 2 L H H H X X L H L L X X X X ILLEGAL 2X L X X X X X L X X L L X X X X X X Maintain Power Down Mode Deep Power Down H X X X X X X X INVALID 1 L H X X X X X X Deep Power Down mode exit 5 L L X X X X X X Maintain Deep Power Down Mode

Rev 1.0 / Jun. 2008 25 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CKE Enable(CKE) Truth TABLE (Sheet 2 of 2) Note : 1. For the given current state CKE must be low in the previous cycle. 2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high. 3. The address inputs depend on the command that is issued. 4. The Precharge Power Down mode, the Self Refresh mode, and the Mode Register Set can only be entered from the all banks idle state. 5. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. When exiting deep power down mode, a NOP (or Device Deselect) command is required on the first positive edge of clock after CKE goes high and is maintained for a minimum 200usec. Current State CKE Command Action NotesPrevious Cycle Current CycleCS RAS CAS WE BA0, BA1 Amax- All Banks Idle H H H X X X Refer to the idle State section of the Current State Truth Table H H L H X X 3 H H L L H X 3 H H L L L H X X Auto Refresh H H L L L L OP CODE Mode Register Set 4 H L H X X X Refer to the idle State section of the Current State Truth Table H L L H X X 3 H L L L H X 3 H L L L L H X X Entry Self Refresh 4 H L L L L L OP CODE Mode Register Set L X X X X X X X Power Down 4 Any State other than listed above H H X X X X X X Refer to operations of the Current State Truth Table H L X X X X X X Begin Clock Suspend next cycle L H X X X X X X Exit Clock Suspend next cycle L L X X X X X X Maintain Clock Suspend

Rev 1.0 / Jun. 2008 26 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Mobile SDR SDRAM OPERATION State Diagram ACT : Active DPDS : Enter Deep Power-Down DPDSX : Exit Deep Power- DownEMRS EMRS : Ext. Mode Reg. Set MRS : Mode Register Set PRE : Precharge PREALL : Precharge All Banks REFA : Auto Refresh REFS : Enter Self Refresh REFSX : Exit Self Refresh READ : Read w/o Auto Precharge READA : Read with Auto Precharge WRITE : Write w/o Auto Precharge WRITEA : Write with Auto Precharge IDLE DEEP POWER DOWN Power Down ROW ACTIVE ACT WRITEREAD Active Power Down WRITE with AP READ with AP WriteRead READ SUSPEND READA SUSPEND WRITE SUSPEND WRITEA SUSPEND Read Write WR ITEAREADA Precharge All Automatic Sequence Manual input CKE High CKE Low CKE Low CKE High CKE High CKE Low CKE Low CKE High CKE Low CKE High Self Refresh (EXTENDED) Mode Register Set Auto Refresh Precharge All Bank Power On REFA REFS REFX (E)MRS DP DS DPDSX PRE PRE PRE CKE Low CKE High

Rev 1.0 / Jun. 2008 27 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series DESELECT The DESELECT function (CS = High) prevents new commands from being executed by the Mobile SDRAM, the Mobile SDRAM ignore command input at the clock. However, the internal status is held. The Mobile SDRAM is effectively deselected. Operations already in progress are not affected. NO OPERATION The NO OPERATION (NOP) command is used to perform a NOP to a Mobile SDRAM that is selected (CS = Low, RAS = CAS = WE = High). This command is not an execution command. However, the internal operations continue. This pre- vents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. (see to next figure) ACTIVE The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of the BA0,BA1 inputs selects the bank, and the address provided on A0-A11(or the highest address bit) selects the row. This row remains active (or open) for accesses until a PRECHARGE command is issued to that bank. (see to next fig- ure) CS A0~Aamx WE CAS RAS Don't Care CLK CKE High BA0,1 CS A0~Amax WE Bank Address CAS RAS Row Address Don't Care CLK CKE High RA BABA0,1 NOP command ACTIVATING A SPECIFIC ROW IN A SPECIFIC BANK

Rev 1.0 / Jun. 2008 28 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series READ / WRITE COMMAND Before executing a read or write operation, the corresponding bank and the row address must be activated by the bank active (ACT) command. An interval of tRCD is required between the bank active command input and the follow- ing read/write command input. The READ command is used to initiate a Burst Read to an active row. The value of BA0 and BA1 selects the bank and address inputs select the starting column location. The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent access. The valid data-out elements will be available CAS latency after the READ command is issued. The WRITE command is used to initiate a Burst Write access to an active row. The value of BA0, BA1 selects the bank and address inputs select the starting column location. The value of A10 determines whether or not auto precharge is used. If auto-precharge is selected, the row being accessed will be precharged at the end of the write burst; if auto precharge is not selected, the row will remain open for subsequent access. READ / WRITE COMMAND CS A0 ~ A7 WE CAS RAS Don't Care CLK CKE High CA BABA0,1 High to Enable Auto Precharge Low to Disable Auto Precharge Read Command Operation Write Command Operation A10 CS A0 ~ A7 WE CAS RAS CLK CKE High CA BABA0,1 A10

Rev 1.0 / Jun. 2008 29 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series READ A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1) cycle after read command set. The SDRAM can perform a burst read operation. The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and the bank select address at the read command set cycle. In a read operation, data output starts after the number of clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3. When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the suc- cessive burst-length data has been output. The /CAS latency and burst length must be specified at the mode register. Read Burst Showing CAS Latency CLK tCK Command DQ Undefined REA D NOP NOP Do0 Do1 Do2 Do3 tOHtLZ tAC CL = 2 REA D NOP NOP NOP Do0 Do1 Do2 Do3 tOH tLZ tAC CL = 3 Command DQ Don't Care

Rev 1.0 / Jun. 2008 30 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series READ to READ Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the new burst follows either the last element of a completed burst or the last desired element of a longer burst that is being truncated. When another read command is executed at the same ROW address of the same bank as the preceding read com- mand execution, the second read can be performed after an interval of no less than 1 clock. Even when the first com- mand is a burst read that is not yet finished, the data read by the second command will be valid. Consecutive Read Bursts A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are shown in Figure. Full-speed random read accesses within a page or pages can be performed as shown in Fig. CLK Doa0 READ CL =3 CL =2 Don't Care Command Address DQ DQ Doa1 Dob0 Dob1 Doa0 Doa1 Dob0 READ’ BA, Col b BA, Col a NOP NOP

Rev 1.0 / Jun. 2008 31 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Non-Consective Read Bursts Randum Read Bursts CLK Don Don READ READ BA, Col n CL =3 CL =2 Don't Care 1) Don (or b ): Data out from column n 2) BA, Col n (b) = Bank A, Column n (b) 3) Burst Length = 4 : 3 subseqnent elements of Data Out appear in the programmed order following Do n (b) Command Address DQ DQ BA, Col b Dob Dob Dog CLK CL =3 CL =2 Don't Care DQ DQ READ READ READ READCommand BA, Col n Address BA, Col b BA, Col x BA, Col g Don Dob Don' Dox Dox' Dob' Dog Dog' Dox' Don Don' Dox Dob Dob' Dog’ 1) Don, etc: Data out from column n, etc n', x', etc : Data Out elements, accoding to the programmd burst order 2) BA, Col n = Bank A, Column n 3) Burst Length = 1, 2, 4, 8 or full page in cases shown 4) Read are to active row in any banks

Rev 1.0 / Jun. 2008 32 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series READ BURST TERMINATE Data from any READ burst may be truncated with a BURST TERMINATE command. The BURST TERMINATE latency is equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be issued X cycles after the READ com- mand where X equals the desired data-out element. Terminating a Read Burst CLK CL =3 CL =2 Don't Care DQ DQ READ BURSTCommand BA, Col n Address Don Don' Don Don' 1) Don : Data out from column n 2) BA, Col n = Bank A, Column n 3) Cases shown are bursts of 4, 8, or full page terminated after 2 data elements

Rev 1.0 / Jun. 2008 33 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series READ to WRITE Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun- cation is necessary, the BURST TERMINATE command must be used, as shown in next fig. Read to Write Note : 1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the preced- ing read command, the write command can be performed after an interval of no less than 1 clock. However, DQM must be set High so that the output buffer becomes High-Z before data input. 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is nec- essary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before data input. CLK CL =3 CL =2 Don't Care DQ DQ READ BURST WRITECommand BA, Col n Address Don Don' Don Don' BA, Col b DIb0 DIb1 DIb2 DIb3 DIb0 DIb1 DIb2 DIb3 1) DO n = Data Out from column n; DI b = Data In to column b

Rev 1.0 / Jun. 2008 34 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series READ to PRECHARGE Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto pre- charge. The disadvantage of the PRECHARGEcommand is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to trun- cate fixed-length or full-page bursts. READ to PRECHARGE CLK CL =3 CL =2 Don't Care DQ DQ READ PRE ACTCommand BA, Col n Address Bank A, All BA, Row Don tRP Don 1) DO n = Data Out from column n 2) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks. 3) The ACTIVE command may be applied if tRC has been met.

Rev 1.0 / Jun. 2008 35 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Write Input data appearing on the data bus, is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered Low, the corresponding data will be written to the memory; if the DM signal is registered High, the corresponding data inputs will be ignored, and a write will not be executed to that byte / column location. During WRITE bursts, the first valild data-in element will be registered coincident with the WRITE command. Subse- quent data elements will be registered on each successive positive clock edge. Upon completion of a fixed-length burst, assuming no other commands have been initiated, the DQ will remain High-Z and any additional input data will be ignored. A full-page burst will continue until terminated. Data for any WRITE burst may be truncated with a subsequent WRITE command, and data for a fixed-length WRITE burst may be immediately followed by data for a WRITE command. The new WRITE command can be issued on any clock following the previous WRITE command, and the data provided coincident with the new command applies to the new command. Basic Write timing parameters for Write Burst Operation Note : 1. Same bank, same ROW address: When another write command is executed at the same ROW address of the same bank as the preceding write command, the second write can be performed after an interval of no less than 1 clock. In the case of burst writes, the second write command has priority. 2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is nec- essary to separate the two write commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. In the case of burst write, the second write command has priority. CLK Don't Care DQ WRITECommand BA, Col b Address DIb0 DQ DIb0 DIb1 DQ DIb0 DIb1 DIb2 DIb3 DQ DIb0 DIb1 DIb2 DIb3 DIb4 DIb6 DIb7 CL = 2 or 3 BL = 1 BL = 2 BL = 4 BL = 8 DIb5

Rev 1.0 / Jun. 2008 36 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series WRITE to WRITE Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case, a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of the clock following the previous WRITE command. The first data-in element from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of desired data-in element. Concatenated Write Bursts Random Write Cycles CLK Don't Care WRITE WRITECommand BA, Col b Address DQ DIb0 DIb1 DIb2 DIb3 DIn0 DIn2 DIn3 CL = 2 or 3 DIn1 BA, Col n DM CLK Don't Care WRITE WRITE WRITE WRITE WRITE NOPCommand BA, Col b Address DQ DIb DIb' DIx DIx’ DIn DIa CL = 2 or 3 DIn’ BA, Col n BA, Col x BA, Col a BA, Col g DIa’ DIg DIg’ DM

Rev 1.0 / Jun. 2008 37 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series WRITE to READ The preceding burst write operation can be aborted and a new burst read operation can be started by inputting a new read command in the write cycle. The data of the read command (READ) is output after the lapse of the /CAS latency. The preceding write operation (WRIT) writes only the data input before the read command. The data bus must go into a high-impedance state at least one cycle before output of the latest data. Note: 1. Same bank, same ROW address: When the read command is executed at the same ROW address of the same bank as the preced- ing write command, the read command can be performed after an interval of no less than 1 clock. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed. 2. Same bank, different ROW address: When the ROW address changes, consecutive read commands cannot be executed; it is nec- essary to separate the two commands with a precharge command and a bank active command. 3. Different bank: When the bank changes, the read command can be performed after an interval of no less than 1 clock, provided that the other bank is in the bank active state. However, in the case of a burst write, data will continue to be written until one clock before the read command is executed (as in the case of the same bank and the same address). CLK Don't Care DQ WRITE READCommand BA, Col b Address DQ DIb0 DIb1 DO n0 DO n2 DO n3 BL = 4 DO n1 DIb0 DIb1 BL = 4 CL = 3 BA, Col n CL = 2 DO n0 DO n2 DO n3 DO n1

Rev 1.0 / Jun. 2008 38 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series WRITE to PRECHARGE Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided Auto Precharge was not activated). When the precharge command is executed for the same bank as the write command that preceded it, the minimum interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data must be masked by means of DQM for assurance of the clock defined by tDPL. To follow a WRITE without truncating the WRITE burst, tDPL should be met as shown in Fig. Non-Interrupting Write to Precharge Data for any WRITE burst may be truncated by a subsequent PRECHARGE command as shown in Figure. Note that only data-inthat are registered prior to the tDPL period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in next Fig. Following the PRECHARGE command, a subsequent com- mand to the same bank cannot be issued until tRP is met. Interrupting Write to Precharge CLK WRITE PRECommand BA, Col b Address DQ DIb0 DIOb2 BL = 4 DIb1 CL = 2 or 3 tDPL DIb3 CLK DQ WRITE PRECommand BA, Col b Address DIb0 DIOb2 BL = 4 DIb1 CL = 2 or 3 tDPL

Rev 1.0 / Jun. 2008 39 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series BURST TERMINATE The BURST TERMINATE command is used to truncate read bursts (with autoprecharge disabled). The most recently registered READ command prior to the BURST TERMINATE command will be truncated, as shown in the Operation section of this datasheet. Note the BURST TERMINATE command is not bank specific. This command can be used to terminate write bursts. BURST TERMINATE COMMAND CS A0 ~ Amax WE CAS RAS Don't Care CLK CKE High BA0, 1

Rev 1.0 / Jun. 2008 40 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. Another command to the same bank (or banks) being precharged must not be issued until the precharge time (tRP) is completed. If one bank is to be precharged, the particular bank address needs to be specified. If all banks are to be precharged, A10 should be set high along with the PRECHARGE command. If A10 is high, BA0 and BA1 are ignored. A PRECHARGE command will be treated as a NOP if there is no open row in that bank, or if the previously open row is already in the process of precharging. PRECHARGE command AUTO PRECHARGE Auto Precharge is a feature which performs the same individual bank precharge function as described above, but with- out requiring an explicit command. This is accomplished by using A10 (A10=high), to enable auto precharge in conjunction with a specific Read or Write command. This precharges the bank/row after the Read or Write burst is complete. Auto precharge is non persistent, so it should be enabled with a Read or Write command each time auto precharge is desired. Auto precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed. Don't Care CS A0~Amax WE CAS RAS CKE High BABA0,1 A10 Bank Address A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low when a precharge command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = High when read or write command, auto- precharge function is enabled. While A10 = Low, auto- precharge function is disabled.

Rev 1.0 / Jun. 2008 41 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series AUTO REFRESH AND SELF REFRESH Mobile SDRAM devices require a refresh of all rows in any rolling 64ms interval. Each refresh is generated in one of two ways: by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode: - AUTO REFRESH. This command is used during normal operation of the Mobile SDRAM. It is non persistent, so must be issued each time a refresh is required. The refresh addressing is generated by the internal refresh controller.The Mobile SDRAM requires AUTO REFRESH commands at an average periodic interval of tREF. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight AUTO REFRESH commands can be posted to any given Mobile SDRMA, and the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is 8*tREF. -SELF REFRESH. This state retains data in the Mobile SDRAM, even if the rest of the system is powered down. Note refresh interval tim- ing while in Self Refresh mode is scheduled internally in the Mobile SDRAM and may vary and may not meet tREF time. After executing a self-refresh command, the self-refresh operation continues while CKE is held Low. During selfrefresh operation, all ROW addresses are refreshed by the internal refresh timer. A self-refresh is terminated by a self-refresh exit command. Before and after self-refresh mode, execute auto-refresh to all refresh addresses in or within tREF (max.) period on the condition 1 and 2 below. 1. Enter self-refresh mode within time as below* after either burst refresh or distributed refresh at equal interval to all refresh addresses are completed. 2. Start burst refresh or distributed refresh at equal interval to all refresh addresses within time as below*after exiting from self-refresh mode. Note: tREF (max.) / refresh cycles. The use of SELF REFRESH mode introduces the possibility that an internally timed event can be missed when CKE is raised for exit from self refresh mode. Upon exit from SELF REFRESH an extra AUTO REFRESH command is recom- mended. In the self refresh mode, two additional power-saving options exist. They are Temperature Compensated Self Refresh and Partial Array Self Refresh and are described in the Extended Mode Register section. The Self Refresh command is used to retain cell data in the Mobile SDRAM. In the Self Refresh mode, the Mobile SDRAM operates refresh cycle asynchronously. The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). The Mobile SDRAM can accomplish an special Self Refresh operation by the specific modes(PASR) programmed in extended mode regis- ters. The Mobile SDRAM can control the refresh rate automatically by the temperature value of Auto TCSR(Tempera- ture Compensated Self Refresh) to reduce self refresh current and select the memory array to be refreshed by the value of PASR(Partial Array Self Refresh). The Mobile SDRAM can reduce the self refresh current(IDD6) by using these two modes.

Rev 1.0 / Jun. 2008 42 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series AUTO REFRESH COMMAND SELF REFRESH ENTRY COMMAND Note 1: If all banks are in the idle status and CKE is inactive (low level), the self refresh mode is set. Function CKEn-1 CKEn CS RAS CAS WE DQM ADDR A10/AP BA Auto Refresh H H L L L H X X Self Refresh EntryH L L L L H X X CS A0 ~ Amax WE CAS RAS Don't Care CLK CKE BA0, 1 CS A0 ~ Amax WE CAS RAS Don't Care CLK CKE High BA0, 1

Rev 1.0 / Jun. 2008 43 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series MODE REGISTER SET The mode registers are loaded via the address bits. BA0 and BA1 are used to select between the Mode Register and the Extended Mode Register. See the Mode Register description in the register definition section. The MODE REGISTER SET command can only be issued when all banks are idle and no bursts are in progress, and a subsequent executable command cannot be issued until tMRD is met. MODE REGISTER SET COMMAND Note: BA0=BA1=Low loads the Mode Register, whereas BA0=Low and BA1=High loads the Extended Mode Register. Code = Mode Register / Extended Mode Register selection (BA0, BA1) and op-code (A0 - An) tMRD DEFINITION CS A0 ~ Amax WE CAS RAS Don't Care CLK CKE BA0, 1 Code Code High MRS NOP Valid Code Valid tMRD CLK Command Address Don't Care

Rev 1.0 / Jun. 2008 44 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series POWER DOWN Power down occurs if CKE is set low coincident with Device Deselect or NOP command and when no accesses are in progress. If power down occurs when all banks are idle, it is Precharge Power Down. If Power down occurs when one or more banks are Active, it is referred to as Active power down. The device cannot stay in this mode for longer than the refresh requirements of the device, without losing data. The power down state is exited by setting CKE high while issuing a Device Deselect or NOP command. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CKE, for maximum power savings while in standby. DEEP POWER-DOWN The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the Mobile SDRAM are stopped and all memory data is lost in this mode. All the information in the Mode Register and the Extended Mode Register is lost. Next Figure, DEEP POWER-DOWN COMMAND shows the DEEP POWER-DOWN command All banks must be in idle state with no activity on the data bus prior to entering the DPD mode. While in this state, CKE must be held in a constant low state. To exit the DPD mode, CKE is taken high after the clock is stable and NOP command must be maintained for at least 200 us. After 200 us a complete re-initialization routing is required defined for the initialization sequence. CS A0 ~ Amax WE CAS RAS Don't Care CLK CKE BA0, 1 POWER-DOWN COMMAND CS A0 ~ Amax WE CAS RAS Don't Care CLK CKE BA0, 1 DEEP POWER-DOWN COMMAND

Rev 1.0 / Jun. 2008 45 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series CLK CKE COMMAND NOP NOP ACTIVE Input buffers gated off tRCD tRAS tRCEnter power-down mode. Exit power-down mode. All banks idle DON’T CARE CLK CKE COMMAND Pre-charge allDeep Power down entry DON’T CARE NOP APCGBSTNOPPCG Input buffers gated off 200us(min) tCKS tCKS Deep Power down Exit

Rev 1.0 / Jun. 2008 46 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Qa2Qa1Qa0 Ra Ra Ca tCKS tCKS tCKS tCKS CLK CKE CS RAS WE VDDR BA0, BA1 AP DQ DQM CAS Precharge Power down Entry Precharge Power down Exit Row Active Active Power down Entry Active Power down Exit Read Precharge Hi-Z Don’t care Note : CKE should be set high at least 1CLK + tCKS prior to Row active command. Power down Exit Time

Rev 1.0 / Jun. 2008 47 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series tCK tCH NOP AUTO REFRESH Any COM tCKS tCKH tCMS tCMH ALL BANKS SINGLE BANK Precharge all active banks DON’T CARE CLK CKE COMMAND DQM A0- A9,Amax A10 BA0, BA1 DQ PRECHARGE BANKS tAS tAH High-Z tRP tXSR tCL NOP or COMMAND INHIBIT Enter self refresh mode Exit self refresh mode (Restart refresh time base) tCKS tRAS(MIN)

Rev 1.0 / Jun. 2008 48 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Power-up and Initialization Like a Synchronous DRAM, Low Power SDRAM(Mobile SDRAM) must be powered up and initialized in a predefined man- ner. Power must be applied to VDD and VDDQ(simultaneously). The clock signal must be started at the same time. After power up, an initial pause of 200 usec is required. And a precharge all command will be issued to the Mobile SDRAM. Then, 8 or more Auto refresh cycles will be provided. After the Auto refresh cycles are completed, a mode register set(MRS) command will be issued to program the specific mode of operation (Cas Latency, Burst length, etc.) And a extended mode register set command will be issued to program specific mode of self refresh operation(PASR). The following these cycles, the Mobile SDRAM is ready for normal opeartion. Programming the registers Mode Register The mode register contains the specific mode of operation of the Mobile SDRAM. This register includes the selection of a burst length(1, 2, 4, 8, Full Page), a cas latency(2 or 3), a burst type. The mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of mode register set command. Extended Mode Register The extended mode register contains the specific features of self refresh opeartion of the Mobile SDRAM. This register includes the selection of partial arrays to be refreshed(half array, quarter array, etc.). The extended mode register set must be done before any activate command after the power up sequence. Any contents of the mode register be altered by re-programming the mode register through the execution of extended mode register set command. Bank(Row) Active The Bank Active command is used to activate a row in a specified bank of the device. This command is initiated by activating CS, RAS and deasserting CAS, WE at the positive edge of the clock. The value on the BA1 and BA0 selects the bank, and the value on the A0-A11 selects the row. This row remains active for column access until a precharge command is issued to that bank. Read and write opeartions can only be initiated on this activated bank after the min- imum tRCD time is passed from the activate command. Read The READ command is used to initiate the burst read of data. This command is initiated by activating CS, CAS, and deasserting WE, RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A7-A0 address inputs select the sarting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Pre- charge is selected the row being accessed will be precharged at the end of the READ burst; if Auto Precharge is not selected, the row will remain active for subsequent accesses. The length of burst and the CAS latency will be determined by the values programmed during the MRS command. Write The WRITE command is used to initiate the burst write of data. This command is initiated by activating CS, CAS, WE and deasserting RAS at the positive edge of the clock. BA1 and BA0 inputs select the bank, A7-A0 address inputs select the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected the row being accessed will be precharged at the end of the WRITE burst; if Auto Pre- charge is not selected, the row will remain active for subsequent accesses.

Rev 1.0 / Jun. 2008 49 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Precharge The Precharge command is used to close the open row in a particular bank or the open row in all banks. When the precharge command is issued with address A10, high, then all banks will be precharged, and If A10 is low, the open row in a particular bank will be precharged. The bank(s) will be available when the minimum tRP time is met after the precharge command is issued. Auto Precharge The Auto Precharge command is issued to close the open row in a particular bank after READ or WRITE operation. If A10 is high when a READ or WRITE command is issued, the READ or WRITE with Auto Precharge is initiated. Burst Termination The Burst Termination is used to terminate the burst operation. This function can be accomplished by asserting a Burst Stop command or a Precharge command during a burst READ or WRITE operation. The Precharge command interrupts a burst cycle and close the active bank, and the Burst Stop command terminates the existing burst operation leave the bank open. Data Mask The Data Mask comamnd is used to mask READ or WRITE data. During a READ operation, When this command is issued, data outputs are disabled and become high impedance after two clock delay. During a WRITE operation, When this command is issued, data inputs can't be written with no clock delay. If data mask is initiated by asserting low on DQM during the read cycle, the data outputs are enabled. If DQM is asserted to High. the data outputs are masked (disabled) and become Hi-Z state after 2 cycle later. During the write cycle, DQM mask data input with zero latency DM CMD CK D0 D1DQ Data Masking

0 Latency

2 Latency

Rev 1.0 / Jun. 2008 50 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Clock Suspend The Clock Suspend command is used to suspend the internal clock of Mobile SDRAM. The clock suspend operation stops transmission of the clock to the internal circuits of the device during burst transfer of data to stop the operation of the device. During normal access mode, CKE is keeping High. When CKE is low, it freezes the internal clock and ex- tends data Read and Write operations. (See examples in next Figures) CLK CKE Q1 Q2 Q3 Q4 RD Internal CLK Clock Suspend Mode WR D1 D2 D3 D4 Clock Suspend Mode DQ Command CKE Command Internal CLK DQ Frozen Int. CLK by CKE (CKE = Fixed Low) Masked by CKE Masked by CKE Frozen Int. CLK by CKE (CKE = Fixed Low)

Rev 1.0 / Jun. 2008 51 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Power Down The Power Down command is used to reduce standby current. Before this command is issued, all banks must be pre- charged and tRP must be passed after a precharge command. Once the Power Down command is initiated by keeping CKE low, all of the input buffer except CKE are gated off. Auto Refresh The Auto Refresh command is used during normal operation and is similar to CBR refresh in Conventional DRAMs. This command must be issued each time a refresh is required. When an Auto Refresh command is issued , the address bits is ''Don't care'', because the specific address bits is generated by internal refresh address counter. Self Refresh The Self Refresh command is used to retain cell data in the Mobile SDRAM. In the Self Refresh mode, the Mobile SDRAM operates refresh cycle asynchronously. The Self Refresh command is initiated like an Auto Refresh command except CKE is disabled(Low). The Mobile SDRAM can accomplish an special Self Refresh operation by the specific modes(PASR) programmed in extended mode registers. The Mobile SDRAM can control the refresh rate automatically by the temperature value of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current and select the memory array to be refreshed by the value of PASR(Partial Array Self Refresh). The Mobile SDRAM can reduce the self refresh current(IDD6) by using these two modes. Deep Power Down The Deep Power Down Mode is used to achieve maximum power reduction by cutting the power of the whole memory array of the devices. For more information, see the special operation for Low Power consumption of this data sheet.

Rev 1.0 / Jun. 2008 52 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Special Operation for Low Power Consumption Deep Power Down Mode Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole memory array of the devices. Data will not be retained once the device enters Deep Power Down Mode. Full initialization is required when the device exits from Deep Power Down Mode. Truth Table Deep Power Down Mode Entry The Deep Power Down Mode is entered by having CS and WE held low with RAS and CAS high at the rising edge of the clock, while CKE is low. The following diagram illustrates deep power down mode entry. Current StateCommand CKEn-1 CKEn CS RAS CAS WE Idle Deep Power Down Entry H L L H H L Deep Power Down Deep Power Down Exit L H X X X X CKE CS RAS CAS WE Pre-charge if needed tRP Deep Power Down Entry

Rev 1.0 / Jun. 2008 53 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Deep Power Down Mode (Continued) Deep Power Down Mode Exit Sequence The Deep Power Down mode is exited by asserting CKE high. After the exit, the following sequence is needed to enter a new command. 1. Maintain NOP input conditions for a minimum of 200usec 2. Issue precharge commands for all banks of the device 3. Issue 8 or more auto refresh commands 4. Issue a mode register set command to initialize the mode register 5. Issue an extended mode register set command to initialize the extended mode register The following timing diagram illustrates deep power down mode exit sequence. CKE CLK CS RAS CAS WE 200us tRP tRC Deep Power Down Exit All Banks Precharge Auto Refresh Auto Refresh Mode Register Set Extended Mode Register Set New Command Accepted Here

Rev 1.0 / Jun. 2008 54 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series

PACKAGE INFORMATION

90 Ball FBGA 0.8mm pitch (Size 8.0mm x 13.0mm) Unit [mm] 1.00 max 0.340 ±0.05 0.450 ± 0.05 8.0

6.40 BSC

0.80( Typ) A1 INDEX MARK 13.0 ±0.10 0.80( Typ) 0.80( 0.80 Bottom View