H400TBXX HIRECT | Alldatasheet

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PHASE CONTROL THYRISTOR H400TBXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 125 200-1600 V VDRM Repetitive peak off-stage voltage 125 200-1600 V IRRM Repetitive peak reverse current V = VRRM 125 80 mA IDRM Repetitive peak off-state current V = VRRM 125 80 mA CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 850C 400 A IRMS RMS on-state current 628 A ITSM Surge on-state current 10 kA I2t I2t Sine wave, 10mS without reverse voltage 125 500 kA VT Peak on-state voltage drop On-state current =1.26kA 125 1.45 V V0 Threshold voltage 125 0.90 V R0 On-state slope resistance 125 0.40 m Ω TRIGGERING PARAMETERS IGT Gate trigger current VD = 5V 25 250 mA VGT Gate trigger voltage 25 2.00 V IL Latching Current VD = 5V 25 1000 mA PG –PEAK Maximum Peak Gate Power Pulse width 100μSec 150 W di/dt Repetitive rate of rise of current 120 A/ μSec VFGM Maximum forward gate voltage 12 V IFGM Maximum forward gate current 40 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 0.076 0C/W RTH (C-HK) Thermal impedance Case to heatsink 0.015 0C/W TJ Maximum Permissible junction temperature 125 0C TSTG Storage temperature range -40 - 125 0C F Mounting Torque 18 NM W Weight 875 gms HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 1 of 6

PHASE CONTROL THYRISTOR H400TBXX All dimensions in mm HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 2 of 6

PHASE CONTROL THYRISTOR H400TBXX On State Power Loss 100 150 200 250 300 350 400 450 500 550 600 650 700 750 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 It (av ) Pt(av) - W 600 1200 1800 DC Maximum Permissible Case Temp 100 120 140 0 50 100 150 200 250 300 350 400 450 500 550 600 650 It(av ) A Tcase (0C) 600 1200 1800 DC HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 3 of 6

PHASE CONTROL THYRISTOR H400TBXX Max non repetitive Surge Current 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.01 0.1 1 10 Time in Sec Itsm (A) Transient Thermal Impedance Junction to Case 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 4 of 6

PHASE CONTROL THYRISTOR H400TBXX On State Characteristics 200 400 600 800 1000 1200 1400 1600 1800 2000 00 . 511 . 522 . 5 Vt (V) It(av) A Gate Trigger Characteristics 0.1 100 0.01 0.1 1 10 100 IG (av) - A VG(V) - V 120W (0.1mS)250C HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 5 of 6

PHASE CONTROL THYRISTOR H400TBXX Ordering Information: - H 400 TB XX Hirect make Thyristor I F(AV) = 400A TB – with a Pigtail V RRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6