H3200CHXX HIRECT | Alldatasheet

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PHASE CONTROL THYRISTOR H3200CHXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 125 200-2000 V VDRM Repetitive peak off-stage voltage 125 200-2000 V IRRM Repetitive peak reverse current V = VRRM 125 200 mA IDRM Repetitive peak off-state current V = VRRM 125 200 mA CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 680C 3200 A IRMS RMS on-state current 5000 A ITSM Surge on-state current 50.40 kA I2t I2t Sine wave, 10mS without reverse voltage 125 12701 kA VT Peak on-state voltage drop On-state current = 3kA 125 1.30 V V0 Threshold voltage 125 0.95 V R0 On-state slope resistance 125 0.127 m Ω TRIGGERING PARAMETERS IGT Gate trigger current VD = 5V 25 400 mA VGT Gate trigger voltage 25 3.50 V IL Latching Current VD = 5V 25 700 mA PG–PEAK Maximum Peak Gate Power Pulse width 100μSec 150 W di/dt Repetitive rate of rise of current 200 A/ μSec VFGM Maximum forward gate voltage 30 V IFGM Maximum forward gate current 10 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 0.009 0C/W RTH (C-HK) Thermal impedance Case to heatsink 0.002 0C/W TJ Maximum Permissible junction temperature 125 0C TSTG Storage temperature range -40 - 125 0C F Mounting Torque 45 KN W Weight 1700 gms HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 1 of 6

PHASE CONTROL THYRISTOR H3200CHXX All dimensions in mm HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 2 of 6

PHASE CONTROL THYRISTOR H3200CHXX On State Power Loss 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 It (av ) Pt(av) - W 600 1200 1800 DC Maximum Permissible Case Temp 100 120 140 160 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 It(av ) A Tcase (0C) 600 1200 1800 DC HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 3 of 6

PHASE CONTROL THYRISTOR H3200CHXX Max non repetitive Surge Current 5000 10000 15000 20000 25000 30000 35000 40000 45000 50000 55000 60000 0.01 0.1 1 10 Time in Sec Itsm (A) Transient Thermal Impedance Junction to Case 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 4 of 6

PHASE CONTROL THYRISTOR H3200CHXX On State Characteristics 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 00 . 511 . 522 . 5 Vt (V) It(av) A Gate Trigger Characteristics 0 100 200 300 400 500 IG (av) - A VG(V) - V 250C HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 5 of 6

PHASE CONTROL THYRISTOR H3200CHXX Ordering Information: - H 3200 CH XX Hirect make Thyristor I F(AV) = 3200A Capsule Thyristor V RRM = XX * 100 e.g.18 * 100 =1800V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6