H175TBXX HIRECT | Alldatasheet

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PHASE CONTROL THYRISTOR H175TBXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM Repetitive peak reverse voltage 125 200-1800 V VDRM Repetitive peak off-stage voltage 125 200-1800 V IRRM Repetitive peak reverse current V = VRRM 125 50 mA IDRM Repetitive peak off-state current V = VRRM 125 50 mA CONDUCTING PARAMETERS IF(AV) Average on-state current 180 sine, 50H Z, TC = 850C 175 A IRMS RMS on-state current 275 A ITSM Surge on-state current 4.60 kA I2t I2t Sine wave, 10mS without reverse voltage 125 106 kA VT Peak on-state voltage drop On-state current = 550A 125 1.76 V V0 Threshold voltage 125 1.08 V R0 On-state slope resistance 125 1.30 m Ω TRIGGERING PARAMETERS IGT Gate trigger current VD = 5V 25 200 mA VGT Gate trigger voltage 25 2.00 V IL Latching Current VD = 5V 25 600 mA PG –PEAK Maximum Peak Gate Power Pulse width 100μSec 120 W di/dt Repetitive rate of rise of current 150 A/ μSec VFGM Maximum forward gate voltage 12 V IFGM Maximum forward gate current 25 A THERMAL & MECHANICAL PARAMETERS R TH (J-C) Thermal impedance, 180 conduction, Sine Junction to case 0.135 0C/W RTH (C-HK) Thermal impedance Case to heatsink 0.04 0C/W TJ Maximum Permissible junction temperature 125 0C TSTG Storage temperature range -40 - 125 0C F Mounting Torque 26 NM W Weight 320 gms HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 1 of 6

PHASE CONTROL THYRISTOR H175TBXX All dimensions in mm HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 2 of 6

PHASE CONTROL THYRISTOR H175TBXX On State Power Loss 100 150 200 250 300 350 400 450 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 It (av ) Pt(av) - W 600 120 1800 DC Maximum Permissible Case Temp 100 120 140 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 It(av ) A Tcase (0C) 600 1200 1800 DC HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 3 of 6

PHASE CONTROL THYRISTOR H175TBXX Max non repetitive Surge Current 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 10 Time in Sec Itsm (A) Transient Thermal Impedance Junction to Case 0.025 0.05 0.075 0.1 0.125 0.15 0.001 0.01 0.1 1 10 Time in Sec Rth(j-c) HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 4 of 6

PHASE CONTROL THYRISTOR H175TBXX On State Characteristics 100 200 300 400 500 600 700 800 00 . 511 . 5 22 . 53 Vt (V) It(av) A Gate Trigger Characteristics 0.1 100 0.01 0.1 1 10 100 IG (av) - A VG(V) - V HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 5 of 6

PHASE CONTROL THYRISTOR H175TBXX Ordering Information: - H 175 TB XX Hirect make Thyristor I F(AV) = 175A TB – with a Pigtail VRRM = XX * 100 e.g.12 * 100 =1200V Hind Rectifiers Ltd reserves the right to change the specifications without notice. This datasheet specifies technical information for semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Hind Rectifiers Ltd Lake Road Bhandup (West) Mumbai – 400 078 Tel: - +91 22 2596 8027/28/29/31 Fax: - +91 22 2596 4114 E-mail: - marketing@hirect.com Website: - www.hirect.com June-2008 HHIINNDD RREECCTTIIFFIIEERRSS LLTTDD 6 of 6