GTVA107001FC-V1-R2

GTVA107001EC_FC WOLFSPEED | Alldatasheet

Document overview

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Technical content

Features

• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance (class AB), 1030 MHz,

50 V, 128 µs pulse width, 10% duty cycle

• Output power P3dB = 890 W - Drain efficiency = 75% - Gain = 18 dB
• Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse condi- tions: 50 V, 100 mA IDQ,128 µs pulse width, 10% duty cycle
• Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001)
• Pb-free and RoHS-compliant

Description

The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC high elec- tron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. RF Characteristics Pulsed RF Performance (tested in Wolfspeed production test fixture) GTVA107001EC: VDD = 50 V, IDQ = 100 mA, POUT = 700 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 20 22 dB Drain Efficiency hD 67 70 — % GTVA107001FC: VDD = 50 V, IDQ = 100 mA, POUT = 700 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 17.5 20 22 dB Drain Efficiency hD 65 70 — % GTVA107001EC/FC GTVA107001EC Package H-36248-2 GTVA107001FC Package H-37248-2

Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 12 mA Gate Threshold Voltage VDS = 10 V, ID = 84 mA VGS(th) –6.2 –3.0 –2.2 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 50 V, ID = 0.10 A VGS(Q) — –3.2 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 100 mA Drain Current ID 10 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Chracteristics

1 TCASE = 85 °C, Pdiss = 334 W, 50 V, IDQ = 100 mA, 128 µs pulse width, 10% duty cycle

2 TCASE = 85 °C, Pdiss = 254 W, 50 V, IDQ = 100 mA, Mode-S signal

Parameter Symbol Value Unit Thermal Resistance, Junction to Case 1 R qJC 0.21 °C/W Thermal Resistance, Junction to Case 2 R qJC 0.25 °C/W

Ordering Information

Type and Version Order Code Package and Description Shipping GTVA107001EC V1 R0 GTVA107001EC-V1-R0 H-36248-2, bolt-down flange Tape & Reel, 50 pcs GTVA107001EC V1 R2 GTVA107001EC-V1-R2 H-36248-2, bolt-down flange Tape & Reel, 250 pcs GTVA107001FC V1 R0 GTVA107001FC-V1-R0 H-37248-2, earless flange Tape & Reel, 50 pcs GTVA107001FC V1 R2 GTVA107001FC-V1-R0 H-37248-2, earless flange Tape & Reel, 250 pcs

Rev. 3.1, 2021-10-14 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Typical Performance (data taken in Wolfspeed production test fixture) 0 200 400 600 800 1000 Gain (dB) Output Power (W) Power Sweep: Gain v. Output Power (series show gain at various duty cycles) VDS = 50 V, IDQ = 100 mA, ƒ = 1030 MHz Gain, 128 µs-10% Gain, 128 µs-1% Gain, Mode-S g107001efc-gr1 0 200 400 600 800 1000 Gain (dB) Output Power (W) Power Sweep: Gain v. Output Power (series show gain at frequency) VDS = 50 V, IDQ = 100 mA, 128 µs pulse width, 10% duty cycle, power optimized Gain, 1030 MHz Gain, 1090 MHz Gain, 1150 MHz g107001efc-gr2 -25 -20 -15 -10 800 900 1000 1100 1200 1300 Input Return Loss (dB) Gain (dB) Frequency (MHz) CW Performance Small Signal Gain & Input Return Loss VDD = 50 V, IDQ(MAIN) = 1000 mA IRL Gain g107001efc-gr7 26 28 30 32 34 36 38 40 42 Efficiency (%) Gain (dB), POUT (dBm) PIN (dBm) MODE-S: (32µs-ON/18-µs-OFF)x48, LTDF-6.4% VDS = 50 V, IDQ = 100 mA, measured on 24th pulse Gain: 1030MHz Pout: 1030MHz Eff: 1030MHz g107001efc_gr 8

Reference circuit assembly diagram (not to scale) Reference Circuit tuned for 0.960 to 1.215 GHz DUT GTVA107001EC V1 or GTVA107001FC V1 Reference Circuit Part No. L TN/GTVA107001FC V1 or L TN/GTVA107001FC V1 PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66 Each Side Load Pull Performance –16 µs pulse width, 10% duty cycle, class AB, VDD = 50 V, 60 mA Max Output Power Max Efficiency Z Optimum Freq [MHz] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [W] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [W] POUT [dBm] POUT [W] Eff [%] Gain [dB] ZLoad [W] ZSource [W] Load Pull Performance width of device 0.385 x 1.6666 = 0.64 Design Layout: OLIVIA LA Date: 01/15/16 Maybe group the electro caps each together C105 C101 C106 RF_OUT C207C205 C204 C114 C203 C202 C210 C213 C211 C209 C214 g t va 10 70 01 e fc _ CD _ 20 18 - 07 - 24 RF_IN R103 C102 C108 C103 R104 C104 C208 C115 C212 C201 R102 C112 C113 C109 C110 C107 C111 R101 VGG VDD C206 GTVA107001FC_OUT_02A 0.96 – 1.215 GHZ, E04 GTVA107001FC_IN_02A 0.96 – 1.215 GHZ, E04 RO4350, 20 MIL (105) RO4350, 20 MIL (193) C215

Rev. 3.1, 2021-10-14 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Reference Circuit (cont.) Components Information Component Description Manufacturer P/N Input C101, C109, C115 Capacitor, 56 pF ATC ATC800A560JT250XT C102 Capacitor, 0.4 pF ATC ATC600F0R4AT250XT C103, C104 Capacitor, 1 pF ATC ATC600F1R0BT250XT C105 Capacitor, 3.6 pF ATC ATC600F3R6BT250XT C106 Capacitor, 3.3 pF ATC ATC600F3R3BT250XT C107, C108 Capacitor, 0.2 pF ATC ATC600F0R2AT250XT C110, C112, C113 Capacitor, 5.6 pF ATC ATC600F5R6BT250XT C111 Capacitor, 6.8 pF ATC ATC600F6R8BT250XT C114 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA R101, R102 Resistor, 10 W Panasonic – ECG ERJ-3GEY J100V R103 Resistor, 5.6 W Panasonic – ECG ERJ-8RQJ5R6V R104 Resistor, 100 W Panasonic – ECG ERJ-3GEY J101V Output C201 Capacitor, 7.5 pF ATC ATC600F7R5BT250XT C202 Capacitor, 6.8 pF ATC ATC600F6R8BT250XT C203, C204 Capacitor, 2.4 pF ATC ATC600F2R4BT250XT C205, C206, C207 Capacitor, 1.5 pF ATC ATC600F1R5BT250XT C208 Capacitor, 39 pF ATC ATC600F390JT250XT C209 Capacitor, 56 pF ATC ATC800A560JT250XT C210 Capacitor, 10 µF TDK Corporation C5750X5R1H106K230KA C211 Capacitor, 22 µF Cornell Dubilier Electronics (CDE) SEK220M100ST C212 Capacitor, 100 µF Cornell Dubilier Electronics (CDE) SK101M100ST C213 Capacitor, 220 µF Panasonic – ECG ECA-2AHG221 C214 Capacitor, 1 µF TDK Corporation C4532X7R2A105M230KA C215 Capacitor, 100 V, 6800 µF Panasonic – ECG ECO-S2AP682EA Pinout Diagrams (top view) Pin Description D Drain G Gate S Source (flange) D G S h-36248-2_2016-09-26 Source (flange) Source (flange) D G h-37248-2_2016-09-23 GTVA107001EC Package H-36248-2 GTVA107001FC Package H-37248-2

Package Outline Specifications Package H-36248-2 19.431 ±0.510 [.765±0.020] CL 34.036 [1.340] 19.812±0.200 [.780±0.008] 1.016 [.040] 3.632±0.380 [.143±0.015] SPH 1.575 [0.062] 45° X 2.720 2X 12.700 [.500] 4.826±0.510 [.190±0.020] 27.940 [1.100] 4X R1.524 [R.060] 2X R1.626 [R.064] D G S FLANGE 9.779 [.385] CL [.370 ]+0.004 –0.006 LID 9.398 +0.100 –0.150 CL [45° X .107] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

Rev. 3.1, 2021-10-14 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com Package Outline Specifications Package H-37248-2 [.190±0.020] D G FLANGE 9.779 [.385] 2X 12.700 [.500] 4.826±0.510 LID 9.398 +0.100 -0.150 [.370 +0.004 [.765±0.020] 45° X 2.720 [45° X .107] CL CL 4X R0.508 +.381 -.127 [ R.020 +0.015 -0.005 ] S 1.016 [.040] SPH 1.575 [.062] 19.812±0.200 [.780±0.008] 20.574 [.810] 3.632±0.380 [.143±0.015] CL Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].

www.wolfspeed.comRev. 03.1, 2021-10-14 GTVA107001EC/FC Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2016 – 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.407.7816

Revision History

Type Page Subjects (major changes at each revision) 01 2016-09-27 Advance All Data Sheet reflects advance specification for product development 02 2018-05-21 Preliminary All Data Sheet shows typical performance information and reference circuit 02.1 2018-07-19 Production All 1, 3 Data Sheet reflects released product specification Updated Typ pulsed CW performance, added Mode S graph Added loadpull information, added C215 to reference circuit and component list 02.2 2018-10-02 Production 2 Updated thermal characteristics 03 2019-02-15 Production All Add product GTVA107001FC V1 3.1 2021-10-14 Production 1 Removed "thermally-enchanced" wording