GTVA101K42EV WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 960 – 1400 MHz, 50 V, single side, 128 µs pulse width, 10% duty cycle - Output power at P3dB = 1400 W - Efficiency = 68% - Gain = 17 dB
  • Pb-free and RoHS compliant

Description

The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC to 1400 MHz frequency band. It is a input matched, high efficiency device in a thermally-enhanced package with bolt-down flange. RF Characteristics1 Pulsed CW Specifications (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 75 mA, POUT (P3dB) = 1400 W peak, ƒ = 1030 MHz, Pulse Width = 128 µs, Duty Cycle = 10% Characteristic Symbol Min Typ Max Unit Linear Gain Gps 17 19 — dB Return Loss R — -19 -12 dB Drain Efficiency hD 65 69 — % Output Mismatch Stress2 VSWR — — 10:1 Y Note 1: All published data at TCASE = 25°C unless otherwise indicated. Note 2: No damage at all phase angles, VDD = 50 V, IDQ = 75mA, POUT = 1400 W Pulsed. Note 3: ESD: Electrostatic discharge sensitive device—observe handling precautions! GTVA101K42EV

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 4.5, March 2021 GTVA101K42EV DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 83.6 mA V(BR)DSS 125 — — V Drain-source Leakage Current VGS = –6 V, VDS = 2 V IDSS 62.7 75.5 — A Gate Threshold Voltage VDS = 10 V, ID = 83.6 mA VGS(th) –3.8 –3.0 –2.7 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Drain Operating Voltage VDD 0 — 50 V Gate Quiescent Voltage VDS = 50 V, ID = 100 mA VGS(Q) — –3.1 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 150 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 167 mA Drain Current ID 48 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Characteristics Parameter Symbol Value Units Thermal Resistance, Junction to case1 RθJC .127 ˚C/W Thermal Resistance, Junction to case2 RθJC .167 ˚C/W Thermal Resistance, Junction to case3 RθJC .166 ˚C/W

1 Tcase = 85°C, PDISS = 700 W, 100 μs Pulse Width, 10% Duty Cycle

2 Tcase = 85°C, PDISS = 700 W, 500 μs Pulse Width, 10% Duty Cycle

3 Tcase = 85°C, PDISS = 700 W, Mode-S Signal

Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F0 = 1.2 - 1.4 GHz unless otherwise noted) Output Power2 POUT – 61 – dBm VDD = 50 V, IDQ = 1.8 A, PIN = 44 dBm Power Added Efficiency2 h – 55 – % VDD = 50 V, IDQ = 1.8 A, PIN = 44 dBm Gain2 G – 17 – dB VDD = 50 V, IDQ = 1.8 A, PIN = 44 dBm

1 Measured in the GTVA101K42EV-AMP2 Application Circuit

2 Pulsed 500 μs, 10% Duty Cycle

Figure 16. Drain Current vs Input Figure 13. Output Power vs Input Figure 15. Large Signal Gain vs Input Figure 14. Power Added Eff. vs Input Figure 17. Gate Current vs Input Figure 13. Output Power vs Input Power

1.2 GHz

1.3 GHz

1.4 GHz

Figure 16. Drain Current vs Input Power Figure 17. Gate Current vs Input Power as Figure 18. Output Power vs Input

Figure 25. 2nd Harmonic vs Frequency Figure 27. 2nd Harmonic vs Output Figure 26. 3rd Harmonic vs Frequency Figure 28. 3rd Harmonic vs Output Figure 29. 2nd Harmonic vs Output Figure 30. 3rd Harmonic vs Output Figure 55. 2nd Harmonic vs Frequency as Figure 56. 3rd Harmonic vs Frequency as a Figure 57. 2nd Harmonic vs Output Power Figure 58. 3rd Harmonic vs Output Power Figure 59. 2nd Harmonic vs Output Power Figure 60. 3rd Harmonic vs Output Power

Rev 4.5, March 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

Rev 4.5, March 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com Designator Description Qty R1 RES, 30 OHMs, +/- 1%, 0805, 1/8W, YAGEO 1 R2, R3 RES, 10 OHMS, +/- 1%, 0805, 1/8W, YAGEO 2 R4, R5 RES, 1 OHMS, +/- 5%, 1206, 125mW, AVX 2 R6 RES, 10 OHMS, +/1%, 1206, 1/4W 1 C1 CAP , 47pF, +/- 5%, 250V, 0805, ATC 600F 1 C2,C4, C13, C15 CAP , 15uF, +/-20%, 10V, X7s, 1206, TDK 4 C3, C14, C19, C32, C36, C38, C40, C41 CAP , 56pF, +/- 5%, 250V, 0805, ATC, 600F 8 C5, C8, C9, C12 CAP , 2.2pF, +/- .1pF, 250V, 0805, ATC 600F 4 C6, C7, C10, C11 CAP , 7.5pF, +/- .25pF, 250V, 0805, ATC 600F 4 C16, C17, C34, C35 CAP , 470uF, +/-20%, 80V, Electrolytic, Vishay 4 C18, C33 CAP , 10uF, +/- 10%, 100V, X7S, 2220, TDK 2 C20, C22, C29, C31 CAP , 4.7pF, +/- .25pF, 250V, 0805, ATC 600F 4 C21, C24, C27, C30 CAP , .5pF, +/- .05pF, 250V, 0805, ATC 600F 4 C23, C28 CAP , 4.3pF, +/-.25pF, 250V, 0805, ATC 600F 2 C25, C26 CAP , 6.8pF, +/-.25pF, 250V, 0805, ATC 600F 2 C37, C39 CAP , 1uF, 100V, X7S, 0805, Murata 2 C44, C45, C46, C47 CAP , .01uF, 50V, X7R 4 C42, C43 CAP , 3.3pF, +/-.1pF, 250V, 0805, ATC 600F 2 W1, W2 Wire, 3.25” , 18AWG 2 W3 Wire, 7” , 12AWG 1 Q1 Transistor, GTVA101K42EV 1

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 4.5, March 2021 GTVA101K42EV Package Outline Specifications Package H-36275-4 S 35.56 [1.400] 4X 11.68 [.460] CL 2X 45° X 1.19 [45° X .047] 10.16 [.400] 9.144 [.360] C LC 2x 2.03 [.080] REF 13.72 [.540] 16.612±0.500 [.654±.020] 2X R1.59 [R.062] 3.23±0.51 [.127±.020] 8X R0.51+0.13 -0.51 [R.020+.005 -.020 ] LC L 41.15 [1.620] 31.242±0.280 [1.230±.011]1.63 [.064] 2.13 [.084] SPH C LCLC L 4.58+0.25 -0.13 .180+.010 -.005 ] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Pinout Diagram (top view) Pin Description D1 Drain Device 1 D2 Drain Device 2 G1 Gate Device 1 G2 Gate Device 2 S Source (flange) D2D1 G1 G2 S

Rev 4.5, March 2021 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com Product Ordering Information Order Number Description Unit of Measure Image GTVA101K42EV-V1-R0 GaN HEMT, Tape & Reel, 50 pcs Each GTVA101K42EV-V1-R2 GaN HEMT, Tape & Reel, 250 pcs Each LTN/GTVA101K42EV V1 Test Board with GaN HEMT installed IFF, 1030 MHz Each GTVA101K42EV-AMP2 Test board with GaN HEMT installed L-Band Radar, 1.2 - 1.4 GHz Each

www.wolfspeed.comRev. 4.5, March 2021 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat- ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2020 - 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. For more information, please contact:

4600 Silicon Drive

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