GPTP1270 GPSEMI | Alldatasheet
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High reliability operation Electroplating applications Resistance welding applications BLOCKING VOLTAGE UP TO 800 V AVERAGE CURRENT 2700 A SURGE CURRENT 32 kA BLOCKING CHARACTERISTICS Characteristic Conditions VRRM Repetitive peak reverse voltage 800 V VRSM Non-repetitive peak reverse voltage 900 V VDRM Repetitive peak off-state voltage 800 V IDRM Repetitive peak off-state current, max. VDRM, single phase, half wave, Tj = Tjmax 100 mA IRRM Repetitive peak reverse current, max. VRRM, single phase, half wave, Tj = Tjmax 100 mA ON-STATE CHARACTERISTICS IT(AV) Average on-state current Sine wave,180° conduction, Th = 55 °C 2700 A IT(RMS) R.M.S. on-state current Sine wave,180° conduction, Th = 55 °C 4241 A ITSM Surge on-state current Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax 32 kA I²t I² t for fusing coordination 5120 kA²s VT(TO) Threshold voltage Tj = Tjmax 0,85 V rT On-state slope resistance Tj = Tjmax 0,122 mΩ VTM Peak on-state voltage, max On-state current IT = 2000 A , Tj = 25 °C 1,15 V IH Holding current, max Tj = 25 °C 300 mA IL Latching current, typ Tj = 25 °C 700 mA TRIGGERING CHARACTERISTICS VGT Gate trigger voltage Tj = 25 °C, VD = 5 V 2,5 V IGT Gate trigger current Tj = 25 °C, VD = 5 V 300 mA VGD Non-trigger voltage VD = 67% VRRM, Tj = Tjmax 0,25 V PGM Peak gate power dissipation Pulse width 100 µs 150 W PG(AV) Average gate power dissipation 2W IFGM Peak gate current 10 A VFGM Peak gate voltage (forward) 10 V VRGM Peak gate voltage (reverse) 12 V SWITCHING CHARACTERISTICS di/dt Critical rate of rise of on-state current Tj = Tjmax 200 A/µs dV/dt Critical rate of rise of off-state voltage Tj = Tjmax 500 V/µs tq Turn-off time, typ Tj = Tjmax, IT = 1000 A, di/dt = -20 A/µs µs VR = 50 V, VD = 67% VDRM, dV/dt = 20 V/µs THERMAL AND MECHANICAL CHARACTERISTICS Rth(j-c) Thermal resistance (junction to case) Double side cooled 0,015 °C/W Rth(c-h) Thermal resistance (case to heatsink) Double side cooled 0,006 °C/W Tjmax Max operating junction temperature 150 °C Tstg Storage temperature -40 / 150 °C F Clamping force ± 5% 23 kN Mass 500 g Document GPTP1270T001 Value Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it
PHASE CONTROLLED SCR GPTP1270 Document GPTP1270T001 Maximum surge current d.s. cooled 1 10 100 Number of cycle current pulses [n] ITSM [A] On-state voltage drop 1000 2000 3000 4000 5000 6000 0 0,5 1 1,5 2 VT [V] IT [A] Tj=Tjmax Thermal impedance (j-c) 0,002 0,004 0,006 0,008 0,01 0,012 0,014 0,016 0,001 0,01 0,1 1 10 100 Time [s] ZTH(j-c) [°C / W] Current rating - sine wave 110 130 150 170 0 400 800 1200 1600 2000 2400 2800 IT [A] Heatsink temperature [°C] 180°90° 120°60°30° Power loss - sine wave 1000 2000 3000 4000 5000 0 400 800 1200 1600 2000 2400 2800 IT[A] PF [W] 180° 120°90° 60° 30° In the interest of product improvement Green Power Solutions reserves the right to change any specification given in this data sheet without notice. On-state voltage drop 1000 2000 3000 4000 5000 6000 0,5 1 1,5 2 VT [V] IT [A] Tj=Tjmax dimensions mm