TECS110 GPSEMI | Alldatasheet
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Phone: +39-011-988 2251 Fax: +39-011-988 1358 http://gpsemi.it/pdf/TECS110,_149.pdf TECS110, _129, _149 SINGLE SCR MODULES Preliminary Data Sheet ► Extremely high power density ► Line voltage range up to 1200 VRMS ► High reliability ► Modularity ► User friendly assembly and maintenance ► Cost effective solution ► Suitable for heavy duty applications Maximum Ratings IT(AV) 1100 1290 1490 A IT(RMS) 1727 2025 2339 A ITSM 27 38 44 50 Hz, Tj = Tjmax, VR = 0 V kA ITSM 28.5 40.1 46.4 60 Hz, Tj = Tjmax, VR = 0 V kA I²t 3645 7220 9680 50 Hz, Tj = Tjmax, VR = 0 V kA²s I²t 3317 6570 8809 60 Hz, Tj = Tjmax, VR = 0 V kA²s VDRM/VRRM 4400 2800 1800 Tj = Tjmax V Tjmax 125 125 125 °C Document TECS110, _129, _149 T001 Part number TECS110 TECS129 180° cond, half sine Ta = 40 °C Air velocity = 7.5 m/s Conditions UnitsTECS149 Des cription Green Power Solutions Srl Web: www.gpsemi.it e-mail: info@gpsemi.it
TECS110, _129, _149 V code On-State Characteristics TECS110 TECS129 TECS149 Conditions Units VT(TO) Threshold voltage 1.05 0.85 0.85 Tj = Tjmax V rT On-state slope resistance 0.25 0.20 0.12 Tj = Tjmax mW IH Holding current, max 300 300 300 Tj = 25°C mA IL Latching current, typ 1500 1500 1500 Tj = 25°C mA PMAX Max power losses 1930 1930 1930 TA = 40°C W Triggering Characteristics TECS110 TECS129 TECS149 Conditions Units VGT Gate trigger voltage 3 2.5 3 Tj = 25°C, VD = 5V V IGT Gate trigger current 150 190 300 Tj = 25°C, VD = 5V mA PGM Peak gate power dissipation 10 10 10 Pulse width 1 ms W PG(AV) Average gate power dissipation 2 2 2 W IFGM Peak gate current 3 3 3 A VFGM Peak gate voltage (forward) 20 20 20 V VRGM Peak gate voltage (reverse) 5 5 5 V Switching Characteristics TECS110 TECS129 TECS149 Conditions Units di/dt Critical rate of rise of on-state current 200 200 200 Tj = Tjmax A/µs dV/dt Critical rate of rise of off-state voltage 1000 1000 1000 Tj = Tjmax V/µs tq Turn-off time, typ 600 400 250 Tj=Tjmax, IT=1000A di/dt=-20A/µs VR=50V dV/dt=20V/µs µs Document TECS110, _129, _149 T001 500 200 200 1200 1200 1800 800 3400 Parameters Parameters Parameters 200 690 VDRM VRRM 200 max repetitive reverse and off-state blocking voltage [V] 550 200 200 2001600 VL(RMS) 400 IDRM IRRM @ Tjmax [mA][V] maximum suggested RMS line voltage TECS149 900 2200 4400 Part Number TECS129 TECS110 2800
TECS110, _129, _149 1.0 0 24 Maximum IEC class 1 currents for typical circuit type TECS110 TECS129 TECS149 Conditions Units AC switch 2457 2882 3329 A Center tap 2200 2580 2980 A Two pulse regen bridge 2200 2580 2980 A Six pulse regen bridge 3125 3625 4227 A Double star with I.P. transf. 1.5;1 min 1.0 0 24 Maximum IEC class 2 currents for typical circuit type TECS110 TECS129 TECS149 Conditions Units AC switch TA = 40 °C delay angle = 0° A Center tap TA = 40 °C delay angle = 0° A Two pulse bridge Six pulse bridge Thermal and mechanical characteristics TECS110 TECS129 TECS149 Conditions Units Tjmax Max operating junction temperature 125 125 125 °C Tstg Storage temperature -40 +70 -40 +70 -40 +70 °C RthJA Thermal resistance (junction to ambient) 0.044 0.044 0.044 Air velocity = 7.5 m/s °C/W Mounting torque - TEC to panel (+/- 10%) N·m Mounting torque - busbar to TEC (+/- 10%) 14 14 14 M8 mounting screw N·m D Depth 486 mm H Height 431 mm W Width 168 mm m Mass kg Document TECS110, _129, _149 T001 Ta = 40 °C Air velocity = 7.5 m/s Circuit Type Parameters F Circuit Type Overall dimensions H D
TECS110, _129, _149 TECS 129 - 22 - 0 0 1 1 2 3 4 5 6
1 Circuit configuration = Single SCR
2 Average current / 10
3 Blocking voltage / 100
4 0 = No fuse - 1 = with fuse for regen application 5 0 = no blown-fuse microsiwitch 0 = No snubber - 1 = one RC snubber - R = one snubber resistor Document TECS110, _129, _149 T001 PART-NUMBERING SYSTEM
TECS110, _129, _149 TECS_ - Main dimensions dimensions in mm Document TECS110, _129, _149 T001