GP2S09 SHARP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
- Compact and thin GP2S26 : Flat lead type GP2S27 : Mini-flat package type 2. Optimum detection distance: 0.6 to 0.8mm 3. Visible light cut-off type 2. Floppy disk drives 3. Various microcomputerized control equip- ment n Outline Dimensions (Unit : mm) n Features n Applications GP2S09/GP2S24/GP2S26/GP2S27 1. Cassette tape recorders, VCRs GP2S24 θ 1 2 1.75 C0.7 ±15˚ 0.8 GP2S09 GP2S26 GP2S27 (0.2) Emitter center 4 - (0.6) (4.0) ∗Tolerance:± 0.15mm ∗( ): Reference dimensions ∗The dimensions indicated by h refer to those measured from the lead base. 1 2 C0.7 ± 20 ˚ 0.75 1.7 ± 30˚ 0.75 1.7 0.4 1.75 C0.7 (0.2) Emitter center 1.75 (0.2) Emitter center (0.4) Internal connection diagram (Common to 4 models) ∗Tolerance:±0.15mm ∗( ):Reference dimensions
1 Anode
2 Emitter
3 Collector
4 Cathode∗Tolerance:±0.15mm ∗( ): Reference dimensions GP2S09 GP2S09/GP2S24/ GP2S26/GP2S27 (0.4) Detector center : Compact DIP long lead type (0.4) Detector center (0.4) Detector center : Compact DIP type data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, θ :0 to 20˚ h 4.0± 0.2 4 -0.5+ 0.2 - 0.1 4.0+ 0.2 - 0.1 3.0+ 0.2 - 0.1 4 - 0.2+ 0.3 - 0 θ GP2S24 0.75 ± 15˚ 1.7 C0.7 1.75 (0.2) Emitter center (4.0) ∗Tolerance:±0.15mm ∗( ): Reference dimensions ∗The dimensions indicated by h refer to those measured from the lead base. (0.4) Detector center θ :0 to 20˚ h 4.0± 0.2 4 -0.4+ 0.2 - 0.1 4.0+ 0.2 - 0.1 4 - 0.15+ 0.2 - 0.1 3.5+ 1.0- 0 3.0+ 0.2 - 0.1 0.4+ 0.2 - 0.1 0.4+ 0.2 - 0.1 0.15+ 0.2 - 0.1 3.0+ 0.2 - 0.1 4.0+ 0.2 - 0.1 0.15+ 0.2 - 0.1 3.0+ 0.2 - 0.1 5.0MAX.13.0± 1.0
n Absolute Maximum Ratings (Ta = 25˚C) (Ta = 25˚C) ∗5 GP2S24 and GP2S26 and GP2S27 don't The ranking of collector current shall be classi- fied into the following 6 ranks. ∗4 Without reflective object Rank B C A or B B or C A, B or C The hatched area more than in the figure below. GP2S26 The hatched area more than edges of package as shown in the figure below. GP2S27 Soldering area The hatched area more than edges of package as shown in the figure below. Test Condition and Arrangement for Collector Current n Electro-optical Characteristics ∗5A GP2S09/GP2S24/GP2S26/GP2S27 1mm ∗2 2.0mm2.0mm 0.5mm 0.5mm 1mm-thick glass (GP2S09 , GP2S24 , GP2S26 , GP2S27 ) Collector-current IC (µ A ) 20 to 42 34 to 71 58 to 120 20 to 71 34 to 120 20 to 120 GP2S09 , GP2S24 1mm ∗2 away from the lower 4mm∗2 GP2S09 : ∗1 Within 5 seconds (Soldering areas for each model are shown below) 0.5mm away from the both ∗3 The condition and arrangement of the reflective object are shown below. have A rank. Parameter Rating Unit Input Forward current 50 mA Reverse voltage 6 V Power dissipation 75 mW Output Collector-emitter voltage 35 V Emitter-collector voltage 6 V Collector current 20 mA Collector power dissiipation 75 mW Total power dissipation 100 mW Operating temperature - 20 to + 85 ˚C Storage temperature - 40 to + 100 ˚C ∗1Soldering temperature 260 ˚C Symbol IF V R V CEO V ECO IC P C Ptot T opr T stg T sol P edge of package as shown 2.0mm away from the both Al evaporation Soldering area:Soldering area: Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F IF = 20mA - 1.2 1.4 V Reverse current I R V R =6 V - - 1 0 µ A Output Collector dark current I CEO V CE = 20V - 10 -9 10 -7 A Transfer charac- teristics ∗3Collector current I C IF = 4mA, VCE = 2V 20 45 120 µ A Response time Rise time t r V CE = 2V, IC = 100µ A R L =1 kΩ , d = 1mm - 20 100 µ s Fall time t f - 20 100 µ s ∗4Leak current I LEAK IF = 4mA, V CE = 2V - - 0.1 µ A
GP2S09/GP2S24/GP2S26/GP2S27 - 25 0 25 50 75 85 100 02 5-2 5 120 Power dissipation P (mW ) 50 100 75 100 0 0.5 1 1.5 2 2.5 3 100 200 500 25˚C 0˚C50˚C 51 0 1 5 2 5 3 00 100 200 300 400 500 600 700 02 5-2 5 100 120 50 100 75246 8 1 00 100 150 200 250 300 350 4mA 2mA 7mA 10mA 25˚C Fig. 1 Forward Current vs. Ambient Temperature Fig. 5 Collector Current vs. Forward current IF (mA ) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Forward current IF (mA ) Forward voltage VF (V ) - 25˚C Collector current IC Forward current IF (mA ) Collector current IC (µ A ) Collector-emitter voltage VCE (V ) Ambient temperature Ta (˚C) Collector-Emitter Voltage Fig. 3 Forward Current vs. Forward Voltage Forward Current Fig. 2 Power Dissipation vs. Ambient Temperature Ambient Temperature Fig. 4 Collector Current vs. (µ A )Relatlve collector current IC (% ) Fig. 6 Relatlve Collector Current vs. T a = 75˚C IF = 15mA IF = 4mA V CE =2 V V CE =2 V T a = 25˚C P tot P, PC T a =
GP2S09/GP2S24/GP2S26/GP2S27 75 1005025 0 0.02 0.050.01 0.1 0.1 0.2 0.5 1 2 5 10 0.2 0.5 100 0.1 1 10 100 1000 0.1 0.2 0.5 100 200 500 1000 Input Output Output Input 01 2 4 5 100 30 2 4 100 613 5 7 Fig. 7 Collector Dark Current vs. Ambient TemperatureCollector dark current I (A ) Ambient temperature Ta (˚C) RD RL VCC td tr ts tf 90% 10% Relative collector current (% ) Card moving distance L(mm ) Fig.11 Relative Collector Current vs.Fig.10 Relative Collector Current vs. Distance between Sensor and Al Evaporation Glass 10-1 0 10-9 10-8 10-7 10-6 (GP2S24/ GP2S26/GP2S27 ) d = 1mm CEO Response time (µ s) Relative collector current (% ) V CE =2 V Test Circuit for Response Time V CE = 20V V CE =2 V IC = 100 µA T a = 25˚C tr tf td ts IF = 4mA V CE =2 V T a = 25˚C Distance between sensor and Al evaporation glass d (mm ) IF = 4mA T a = 25˚C V CE =2 V IC = 100 µA T a = 25˚C tr tf td ts Card Moving Distance (1) (GP2S09 ) Response time (µ s) Fig. 8 Response Time vs. Load Resistance Load resistance RL (kΩ ) Fig. 9 Response Time vs. Load Resistance Load resistance RL (kΩ )
GP2S09/GP2S24/GP2S26/GP2S27 -2 0 2 4 100 6-1 1 3 5 1kΩ -1 0 -1 5 -2 0 2 5 2 5 2 5 600 700 800 900 1000 1200 100 1100 Al evaporated glassd Correspond to Fig.11 OMS card L= 0 d White Lmm Test condition d = 1mm d = 1mm Test condition Lmm White d L= 0 OMS card Correspond to Fig.12 Black Black -2 0 -1 5 -1 0 Frequency f (Hz ) 1kΩ Fig.12 Relative Collector Current vs. Card moving distance L(mm ) d= 1mm Frequency f (Hz ) Relative sensitivity (% ) VCE = 2V IF = 4mA VCE = 2V IF = 4mA (GP2S09 ) (GP2S24/ GP2S26/ GP2S27 ) Relative collector current (% ) Wavelength λ (nm ) Card Moving Distance (2) Characteristics (EX : GP2S24 ) Test Condition for Distance & Detecting Position Fig.13-a Frequency Response Fig.13-b Frequency Response Voltage gain AV (dB ) Voltage gain AV (dB ) 102 103 104 105 Fig.14 Spectral Sensitivity (Detecting Side) IF = 4mA V CE =2 V T a = 25˚C R L = 10kΩ T a = 25˚C R L = 10kΩ V CE =2 V IC = 100µ A T a = 25˚C V CE =2 V IC = 100µA T a = 25˚C Correspond to Fig.10 102 103 104 105 106 l Please refer to the chapter“ Precautions for Use” .