GCU08AA-130 POWEREX | Alldatasheet
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Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCU08AA-130 OUTLINE DRAWING Dimensions in mm APPLICATION Inverters, DC choppers, Induction heaters, DC to DC converters. G Symmetrical GCT G GCT and Gate driver are connected (208) 160MIN (80) (20) 9MAX (250) 80±0.5 (140) (165) (80)(85) (104) (120) (48) (46.5) (46.5) (48) (160) G K G KG K G K G K G K φ47±0.2 LED4 LED3 LED2 LED1 TPG TPX DE2 DE1 20MAX 10.1±0.9 26.2±0.3 14.5±1.3 6±0.5 6±0.5 A 6±0.5 6 ±0.5 (5) 40MAX (20) (13.7) (1.6) 10MIN φ47±0.2 A PART MAGNIFICATION
Mar. 2001 On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Reverse recovery charge Reverse recovery energy Gate trigger current Gate trigger voltage Thermal resistance Delay time V TM IRRM IDRM IGRM Q RR Erec IGT VGT R th(j-f) Eon — Turn-off switching energy tgt ts Turn-on switching energy UnitSymbol VRRM VRSM VDRM VDSM VLTDS Parameter V V V V V Voltage class 6500 6500 6500 6500 3600 Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage Long term DC stability voltage MAXIMUM RATINGS MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE GCT PART (Type name : FGC800A-130DS) Conditions VGK = –2V VGK = –2V VGK = –2V, λ = 100 Fit 520 330 4.8 9.6 × 104 500 800 100 120 –20 ~ +115 –20 ~ +150 11.1 ~ 15.8 530 V DM = 3/4 VDRM , VD = 3000V, LC = 0.3µH, VRG = 20V Tj = 25/115°C, With GU-D08 (see Fig. 1, 3) Applied for all conduction angles f = 60Hz, sinewave θ = 180°, Tf = 55°C VD = 3000V, IT = 800A, CS= 0.1µF, RS= 10Ω Tj = 25/115°C, f = 60Hz, With GU-D08 (see Fig. 1,2 ) (Recommended value 13kN) Typical value One half cycle at 60Hz, Tj = 115°C Start Ratings A A kA A2s V V A A kW kW W W kN g RMS on-state current Average on-state current Surge on-state current Current-squared, time integration Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight IT(RMS) IT(AV) ITSM I2t VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg Symbol Parameter Conditions ITQRM Repetitive controllable on-state current 800 Unit A diT/dt Critical rate of rise of on-state current 1000 A/µs V mA mA mA µC J/P A V °C/W
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Limits Min Typ Max Unit DC METHOD : V D = 24V, RL = 0.1Ω , Tj = 25°C dv/dt Critical rate of rise of off-state voltage Turn-on time Eoff Storage time 3000 6.8 150 100 1650 5.0 0.5 1.5 0.025 5.0 1.6 3.0 6.0 V/µs µs J/P µs J/P I T = 800A, Tj = 115°C VRM = 6500V, Tj = 115°C VDM = 6500V, VGK = –2V, Tj = 115°C VRG = 21V, Tj = 115°C VD = 3000V, VGK = –2V, Tj = 115°C (Expo. wave) (see Fig. 4) I T = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 115°C C S= 0.1µF, RS = 10Ω With GU-D08 (see Fig. 1, 2) IT = 800A, VDM = 3/4 VDRM , VD = 3000V C S= 0.1µF, RS= 10Ω , VRG = 20V, Tj = 115°C With GU-D08 (see Fig. 1, 5) VR = 3000V, IT = 800A, di/dt = 1000A/µs C S= 0.1µF, RS = 10Ω , Tj = 115°C (see Fig. 5, 6) Junction to fin td — — 1.0 µs
Mar. 2001 Rc L(load) FWDi GCT CDi Cc VD Lc L(line) Fig. 1 Turn-on and Turn-off waveform Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit (With clamp circuit) Fig. 4 dv/dt test waveform MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE VD tgt td VRG IGMdiG /dt ts IG VRG IT VD td ; 0VG ~ 0.9VD tgt ; 0VG ~ 0.1VD diG /dt ; 0.1IGM ~ 0.9IGM ts ; 0VG ~ 0.9IT diGQ /dt ; 0.1IGQ ~ 0.9IGQ IGQ diGQ/dt GCT L VD Cs Rs τ VD dV/dt 0.632VD /τ 0.632VD t Fig. 5 Turn-off and Recovery test circuit Fig. 6 Reverse recovery waveform CsGCT2 GCT1 Rs Cs Rs L (load) L (line) VD GCT1 : For turn-off test GCT2 : For Recovery test di/dt (0 ~ 50%IT) IRM trr IT 50%IT 50%IRM Q RR trr × IRM 90%IRM
Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Fig. 7 Gate current, gate voltage and control signal waveform T = 1/f toff ton CONTROL SIGNAL IGQ trd tw tfd IG IGM diG /dt (10A ~ 80A) 80A VG = 0 VG = 0 VRG 50% GATE CURRENT GATE VOLTAGE diGQ /dt Power supply (Note 1) Control signal (Note 3) Frequency Delay time of on gate current Delay time of off gate current Critical rate of rise of on gate current Peak on gate current Width of on high gate current On gate current Critical rate of rise of off gate current Maximum duty Temperature Status signal (Note 4) DC power supply IT = 330A, f = 780Hz Optical fiber data link Transmitter : HFBR-1521 (HP) Receiver : HFBR-2521 (HP) IT = 330A, Duty 33% Tj ≥ –10°C VRG = 20V Operation temperature (Recommend : ≤ 40°C) VC f tfd trd diG/dt IGM tW IG diGQ/dt D max Ta 2.5 1.25 –10 V Hz µs µs A/µs A µs A A/µs GATE DRIVER PART (Type name : GU-D08) Symbol Parameter Conditions Limits Min Typ Max Unit P Power consumption (Note 2) 1200 780 3.0 3.0 100 +60 W Note 1. (1) Guaranteed power supply voltage for operation is 19V minimum and 21V maximum. (2) When over voltage occurs, GDU voltage bus (G-K voltage for GCT) is clamped to be 21V if mamimum voltage for input gata voltage from power supply is 25V and maximum duration of over voltage higher than 21V from power supply is 0.4 sec when control signal is on (Please see Fig. 8). (3) When over voltage occurs, GDU voltage bus is clamped to be 21V with no time limitation if maximum voltage from power supply is 25V and control signal is off (Please see Fig. 8). Note 2. GCT is off state and no gate signal is supplied for gate driver. No leakage current flows between gate and cathode of GCT. Note 3. Optic fiber data link HFBR-1521 and HFBR-2521 are interlocked each other.
Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Note 4. 1. Status signal from LED (1) Status signal Status of GCT On state Off state LED 1 (Red) LED 2 (Yellow) OFF ON ON OFF 20±1V Voltage down 20±1V Voltage down Normal Normal G-K short G-K short Normal Fault Fault Fault G-K LED (LED 3) PS LED (LED 4) (2) Fault signal Status G-K PS On Off, V < 17.5V (Typ.) On Off, V < 17.5V (Typ.) On Off (If V > 12.5V (Typ.) then LED 3 is on) Off Off 2. Status signal from Transmitter (Note 5) (L : Light NL : No light) Control signal (GDU input) Status signal (GDU output) Control signal (Control board) NL L L L NL NL Control signal (GDU input) Status signal (GDU output) Control signal (Control board) L Normal Fault L NL L L NL NL Control signal (GDU input) Status signal (GDU output) Control signal (Control board) L NL Normal Fault L NL L NL (Always No light) (Always light) L L NL NL Control signal (GDU input) Status signal (GDU output) Control signal (Control board) (1) Normal operation (3) Fault signal (G-K short) (2) Fault signal (O/V or U/V) (3) Fault signal (fiber optic) Note 5. About over voltage fault signal, please see Fig. 8.
Mar. 2001 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE Note 6. Maximum peak voltage of GDU input voltage from power supply should be lower than 25V. Note 7. If the period for over voltage < 1.0ms (period t1), no fault signal is sent. \` If the period for over voltage ≥ 1.0ms, fault signal starts after period t2 from 22V of power supply voltage. System should be shut down (Control signal should be off) within period t3 from fault signal start. Note 8. GDU Voltage bus (G-K Voltage for GCT) is clamped to be 21V if power supply voltage is higher than 21V after system shut down (control signal off). Fig. 8 Over voltage fault signal timing chart Power supply voltage 25V Maximum Guaranteed Voltage (Note 6) (Note 8) 22V 21V 19V 19V t1 t2 GDU Voltage bus (G-K Voltage for GCT) 21V Status Signal Control Signal Fault signal start System shut down Control signal off1 t1 < 1.0ms (Max. repetition rate ; 1 pulse/100ms) t2 ≥ 1.0ms t3 < 0.4sec
Mar. 2001 PERFORMANCE CURVES MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU08AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE 0.03 0.035 0.02 0.025 0.01 0.015 0.005 0.001 0.01 0.1 1 10 10012345678 100 200 300 400 500 600 700 800 9001000 2.5 10000 2.0 1.5 1.0 0.5 0.0 900800700600500400300200100 Tj=25°C Tj=115°C 104 102
103 Max
REVERSE RECOVERY ENERGY Erec(J/P) ON-STATE CURRENT I T (A) Erec VS IT 100 200 300 400 500 600 700 800 9001000 Typ Max Condition VR =3000V, Tj=115°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω REVERSE RECOVERY CHARGE Q RR (µC)2500 2000 1500 1000 500 00 100 200 300 400 500 600 700 800 9001000 Typ Max Condition VR =3000V, Tj=115°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω GCT1:Turn-off test GCT2:Recovery test Turn-off and Recovery test circuit CsGCT2 GCT1 Rs Cs Rs L(load) L(line) VD GCT1:Turn-off test GCT2:Recovery test Turn-off and Recovery test circuit CsGCT2 GCT1 Rs Cs Rs L(load) L(line) VD MAXIMUM ON-STATE CHARACTERISTIC ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) TURN ON SWITCHING ENERGY E on (J/P) TURN ON CURRENT I T (A) Eon VS IT Condition VD =3000V, Tj=115°C di/dt=1000A/µs Cs=0.1µF, Rs=10Ω With GU-D08 Condition VD =3000V, VDM =VD +2.34∗IT Tj=115°C, With GU-D08 Cs=0.1µF, Rs=10Ω TURN OFF SWITCHING ENERGY E off (J/P) TURN OFF CURRENT I T (A) Eoff VS IT ON-STATE CURRENT I T (A) Q RR VS IT GCT1:Turn-off test GCT2:Recovery test Turn-off and Recovery test circuit CsGCT2 GCT1 Rs Cs Rs L(load) L(line) VD MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) THERMAL IMPEDANCE Zth( °C/W) TIME (S)