DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
(2000V / 1.0A) GC02-20H Rectifier Diode * Halogen-free type * Compliance to RoHS product * G PRC (Glass passivated rectifier chip) inside * G lass passivated cavity-free junction * L ead less chip form, no lead damage * L ow profile package * F or surface mounted applications * P lastic package has Underwriters Laboratory Flammability C lassification 94V-0
FEATURES
- General purpose rectification * Surge absorption APPLICATION Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Cathode Band, Laser marking MECHANICAL DATA 2013/11REV. 0 Absolute Maximum Ratings (Ta = 25 o VRRM 2000 V IF(AV) IFSM A Tj TSTG -65 to +175 -65 to +175 ITEM Average forward current Symbol Unit Peak forward surge current (8.3ms single half sine-wave) Operating junction temperature Range Rating 1.0 Repetitive peak reverse voltage Storage temperature Range oC Electrical characteristics (Ta = 25 o ITEM Symbol Conditions Unit Rth(JA) Junction to ambient (NOTE) Thermal resistance oC/W Rth(JL) Junction to lead (NOTE) pFCj VR = 4V, f = 1.0 MHzTypical junction capacitance uAIRRM Maximum DC reverse current at rated DC blocking voltage VR = Max. VRRM VF IF = 1.0A V Value 2Maximum instantaneous forward voltage * 3,000 pieces per 7" (178mm ± 2 mm) reel * 4 reels per box * 6 boxes per carton PACKING Unit : mm OUTLINE DIMENSIONS JEDEC : SMA DO-214AC 2.20 ± 0.1 0.50 4.5 ± 0.1 0.96+ 0.2 - 0.1 Case : 2010 Ta = 25 oC Ta = 125 oC Preliminary
(2000V/1.0A) GC02-20H 2013/11REV. 0 FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.50 1.25 1.00 0.75 0.50 0.25 0 50 75 100 125 150 175 200 60Hz RESISTIVE OR INDUCTIVE LOAD LEAD TEMPERATURE, o C FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS JUNCTION CAPACITANCE, pF 200 .2 .4 1.0 2 4 10 20 40 100 100 TJ=25 o C FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.10 1.00 10.00 0.01 PULSE WIDTH=300uS 1% DUTY CYCLE INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAMPERES 0.01 0 20 0.10 1.0 TJ = 25 o C TJ = 125 o C 40 60 80 100 110