MMBD914G ZOWIE | Alldatasheet

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Zowie Technology Corporation High-Speed Switching Diode MMBD914G SOT-23 ANODECATHODE 3 1 Rating Symbol Value Unit Characteristic Symbol Min. Max. Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM( surge ) 500 mAdc Characteristic Symbol Max. Unit Total Device Dissipation FR-5 Board(1) TA=25 o C Derate above 25 o C PD 225 1.8 mW mW / oC Total Device Dissipation Alumina Substrate,(2) TA=25 o C Derate above 25 o C PD VF 300 2.4 - 1000 mW mW / oC Thermal Resistance, Junction to Ambient 556 oC / W MAXIMUM RATINGS THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA=25 o C unless otherwise noted) V(BR) 100 - Vdc mVdc OFF CHARACTERISTICS R JA Thermal Resistance, Junction to Ambient 417 oC / WR JA Junction and Storage Temperature Forward Voltage ( IF=10 mAdc ) IR ( VR=20 Vdc ) ( VR=75 Vdc ) 0.025 5.0 uAdcReverse Voltage Leakage Current Reverse Breakdown Voltage ( IBR=100 uAdc ) CJ - 4.0 pF Diode Capacitance ( VR=0, f=1.0MHZ ) trr - 4.0 nS -55 to +150 oCTJ,TSTG Reverse Recovery Time ( IF=IR=10 mAdc, IR(REC=1.0mAdc, measured at IR=1.0mA RL=100 ) Zowie Technology Corporation2007/03 Lead free product

Notes: 1. A 2.0k variable resistor adjusted for a Forward Current (I F) of 10mA.

  1. Input pulse is adjusted so IR(peak) is equal to 10mA.

50 OUTPUT

50 INPUT

FIGURE 1. RECOVERY TIME EQUIVALENT TEST CIRCUIT FIGURE 2. FORWARD VOLTAGE FIGURE 3. LEAKAGE CURRENT FIGURE 4. CAPACITANCE