MMBD6050 ZOWIE | Alldatasheet
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Technical content
Zowie Technology Corporation Switching Diode MMBD6050 SOT-23 Rating Symbol Value Unit Characteristic Symbol Min. Max. Unit Reverse Voltage VR 70 Vdc Peak Forward Current IF 200 mAdc Peak Forward Surge Current IFM( surge ) 500 mAdc Characteristic Symbol Max. Unit Total Device Dissipation FR-5 Board(1) TA=25 o C Derate above 25 o C PD 225 1.8 mW mW / oC Total Device Dissipation Alumina Substrate,(2) TA=25 o C Derate above 25 o C PD VF 300 2.4 ( IF=1.0 mAdc ) ( IF=100 mAdc ) 550 850 700 1100 mW mW / oC Thermal Resistance, Junction to Ambient 556 oC / W MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING ELECTRICAL CHARACTERISTICS (TA=25 o C unless otherwise noted) V(BR) 70 - Vdc mVdc OFF CHARACTERISTICS R JA Thermal Resistance, Junction to Ambient 417 oC / WR JA Junction and Storage Temperature Forward Voltage IR - - 0.1 uAdcReverse Voltage Leakage Current (VR=50 Vdc ) Reverse Breakdown Voltage ( IBR=100uAdc ) CJ - 2.5 pFDiode Capacitance ( VR=0, f=1.0MHZ ) trr - 4.0 nSReverse Recovery Time ( IF=IR=10 mAdc, IR(REC)=1.0mAdc ) MMBD6050=5A -55 to +150 oCTJ,TSTG Zowie Technology CorporationREV. : 0 ANODECATHODE 3 1
Notes: 1. A 2.0k variable resistor adjusted for a Forward Current (IF) of 10mA.
- Input pulse is adjusted so IR(peak) is equal to 10mA.
50 OUTPUT
50 INPUT
FIGURE 1. RECOVERY TIME EQUIVALENT TEST CIRCUIT FIGURE 2. FORWARD VOLTAGE FIGURE 3. LEAKAGE CURRENT FIGURE 4. CAPACITANCE