G8909 HAMAMATSU | Alldatasheet
Document overview
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Technical content
Features
/K6C 250 µm pitch, 40 ch parallel readout /K6C Low cross-talk /K6C Precise chip position tolerance: ±0.05 mm
Applications
/K6C DWDM monitor with AWG PHOTODIODE InGaAs PIN photodiode array Photodiode array for DWDM monitor PRELIMINARY DATA Apr. 2002 I /G20/G47/G65/G6E/G65/G72/G61/G6C/G20/G72/G61/G74/G69/G6E/G67/G73 /G50/G61/G72/G61/G6D/G65/G74/G65/G72 /G56/G61/G6C/G75/G65 /G55/G6E/G69/G74 /G41/G63/G74/G69/G76/G65/G20/G61/G72/G65/G61 /G66/G30/G2E/G30/G38 /G6D/G6D /G50/G69/G78/G65/G6C/G20/G70/G69/G74/G63/G68 /G32/G35/G30 /GB5/G6D /G4E/G75/G6D/G62/G65/G72/G20/G6F/G66/G20/G65/G6C/G65/G6D/G65/G6E/G74/G73 /G34/G30 /G63/G68 I /G20/G41/G62/G73/G6F/G6C/G75/G74/G65/G20/G6D/G61/G78/G69/G6D/G75/G6D/G20/G72/G61/G74/G69/G6E/G67/G73 /G50/G61/G72/G61/G6D/G65/G74/G65/G72/G53/G79/G6D/G62/G6F/G6C/G52/G65/G6D/G61/G72/G6B /G56/G61/G6C/G75/G65 /G55/G6E/G69/G74 /G52/G65/G76/G65/G72/G73/G65/G20/G76/G6F/G6C/G74/G61/G67/G65 /G56/G52/G20/G4D/G61/G78/G2E /G36/G56 /G41/G6C/G6C/G6F/G77/G61/G62/G6C/G65/G20/G69/G6E/G70/G75/G74/G20/G70/G6F/G77/G65/G72/G50/G69/G6E/G20/G4D/G61/G78/G2E /G31/G30 /G6D/G56 /G4F/G70/G65/G72/G61/G74/G69/G6E/G67/G20/G74/G65/G6D/G70/G65/G72/G61/G74/G75/G72/G65 /G54/G6F/G70/G72 /G2D/G34/G30/G20/G74/G6F/G20/G2B/G38/G35 /GB0/G43 /G53/G74/G6F/G72/G61/G67/G65/G20/G74/G65/G6D/G70/G65/G72/G61/G74/G75/G72/G65/G54/G73/G74/G67/G2A /G2D/G34/G30/G20/G74/G6F/G20/G2B/G38/G35/GB0/G43 /G2A/G20/G49/G6E/G20/G4E/G32/G20/G65/G6E/G76/G69/G72/G6F/G6E/G6D/G65/G6E/G74/G20/G6F/G72/G20/G69/G6E/G20/G76/G61/G63/G75/G75/G6D I /G20/G45/G6C/G65/G63/G74/G72/G69/G63/G61/G6C/G20/G61/G6E/G64/G20/G6F/G70/G74/G69/G63/G61/G6C/G20/G63/G68/G61/G72/G61/G63/G74/G65/G72/G69/G73/G74/G69/G63/G73/G20/G28/G54/G61/G3D/G32/G35/G20/GB0/G43/G2C/G20/G70/G65/G72/G20/G31/G20/G65/G6C/G65/G6D/G65/G6E/G74/G29 /G50/G61/G72/G61/G6D/G65/G74/G65/G72/G53/G79/G6D/G62/G6F/G6C/G43/G6F/G6E/G64/G69/G74/G69/G6F/G6E/G4D/G69/G6E/G2E/G54/G79/G70/G2E/G4D/G61/G78/G2E/G55/G6E/G69/G74 /G53/G70/G65/G63/G74/G72/G61/G6C/G20/G72/G65/G73/G70/G6F/G6E/G73/G65/G20/G72/G61/G6E/G67/G65/G6C /G2D /G30/G2E/G39/G20/G74/G6F/G20/G31/G2E/G37 /G2D /GB5/G6D /G6C/G3D/G31/G2E/G33/G31/G20/GB5/G6D/G30/G2E/G38 /G30/G2E/G39 /G2D/G50/G68/G6F/G74/G6F/G20/G73/G65/G6E/G73/G69/G74/G69/G76/G69/G74/G79/G53 /G6C/G3D/G31/G2E/G35/G35/G20/GB5/G6D/G30/G2E/G38/G35/G30/G2E/G39/G35/G2D /G41/G2F/G57 /G50/G68/G6F/G74/G6F/G20/G72/G65/G73/G70/G6F/G6E/G73/G65/G20/G6E/G6F/G6E/G2D/G75/G6E/G69/G66/G6F/G72/G6D/G69/G74/G79 /G50/G52/G4E/G55 /G2D /G2D /GB1/G35 /G25 /G44/G61/G72/G6B/G20/G63/G75/G72/G72/G65/G6E/G74/G49/G44 /G56/G52/G3D/G35/G20/G56 /G2D /G30/G2E/G30/G32/G30/G2E/G32 /G6E/G41 /G53/G68/G75/G6E/G74/G20/G72/G65/G73/G69/G73/G74/G61/G6E/G63/G65 /G52/G73/G68 /G56/G52/G3D/G31/G30/G20/G6D/G56 /G2D /G38 /G2D /G47 /G57 /G54/G65/G72/G6D/G69/G6E/G61/G6C/G20/G63/G61/G70/G61/G63/G69/G74/G61/G6E/G63/G65/G43/G74/G56/G52/G3D/G35/G20/G56/G2C/G20/G66/G3D/G31/G20/G4D/G48/G7A/G2D /G31/G2E/G34 /G2D /G70/G46 /G43/G72/G6F/G73/G73/G2D/G74/G61/G6C/G6B /G2D /G56/G52/G3D/G30/G2E/G31/G20/G56 /G2D /G2D/G33/G33 /G2D /G64/G42
InGaAs PIN photodiode array G8909-01 I Spectral response KIRDB0002EB I Dark current vs. reverse voltage KIRDB0266EA I Terminal capacitance vs. reverse voltage KIRDB0267EA KIRDB0268EA I Dark current vs. temperature I Cross-talk characteristic KIRDB0269EA WAVELENGTH (µm) PHOTO SENSITIVITY (A/W) 2.0 0.5 (Typ. Ta=25 ˚C) 0.6 REVERSE VOLTAGE (V) DARK CURRENT 0.01 0.1 1 1 pA 10 pA 100 pA 100 (Typ. Ta=25 ˚C) 1 nA REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 0.01 0.1 1 100 fF 1 pF 100 (Typ. Ta=25 ˚C, f=1 MHz) 10 pF TEMPERATURE (˚C) DARK CURRENT 20 30 50 10 pA 1 nA (Typ. VR=5 V) 100 nA 100 pA 10 nA 7040 60 POSITION X (µm) RELATIVE SENSITIVITY (%) -250 -200 -100 0.01 (Typ. Ta=25 ˚C, λ=1.55 µm, SPOT= 20 µm, Pin=5 nW, VR=0.1 V) 100 0.1 -50-150 250 µm
InGaAs PIN photodiode array G8909-01 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvä gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. Cat. No. KIRD1053E02 Feb. 2003 DN 2.52.0 10.5 2.1 22.0 0.80.5 ANODE PAD (PITCH: 400 µm, 40 ch, 150 × 150 µm BOND PADS) a (0.1) CATHODE PAD * The center of the active area to the bottom of the substrate DETAIL a 0.80 (0.15) 0.70 ± 0.05 * 0.4 I Dimensional outline (unit: mm) KIRDA0158EA