G8605

G8605 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C High-speed response /K6C Low noise /K6C Various active area sizes available from φ1 to φ5 mm

Applications

/K6C Optical power meter /K6C Water content analyzer /K6C Laser diode life test InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C) and two-stage (-20 ˚C) thermoelectrically cooled types are provided. Accessories (Optional) /K6C Preamp for InGaAs PIN photodiode C4159-02 (High-speed type) /K6C Preamp for InGaAs PIN photodiode C4159-03 (High sensitivity type) /K6C Heatsink for one-stage TE-cooled type A3179 /K6C Heatsink for two-stage TE-cooled type A3179-01 /K6C Temperature controller for TE-cooled type C1103-04 I Specifications / Absolute maximum ratings Absolute maximum ratings Active area Thermistor power dissipation TE-cooler allowable current Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * Package Cooling (mm) (mW) (A) (V) (°C) (°C) G8605-11 φ1 5 G8605-12 φ2 5 G8605-13 φ3 5 G8605-15 ➀ /K One-stage TE-cooled 1.5 G8605-21 φ1 5 G8605-22 φ2 5 G8605-23 φ3 5 G8605-25 ➁ /K TO-8 Two-stage TE-cooled 0.2 1.0 -40 to +70 -55 to +85 I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Element tem perature Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity S Dark current ID VR=1 V Cut-off frequency fc VR=1 V RL=50 Ω Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV λ=λp NEP λ=λpType No. (°C) (µm) (µm) 1.3 µm (A/W ) λ=λp (A/W ) Typ. (nA) Max. (nA) (MHz) (pF) (MΩ ) (cm·Hz 1/2 /W ) (W/Hz1/2) G8605-11 0.07 0.35 18 150 1500 5 × 10 -15 G8605-12 0.3 1.5 4 550 300 1 × 10 -14 G8605-13 15 2 1000 100 2 × 10 -14 G8605-15 -10 0.9 to 1.67 2.5 12.5 0.6 3500 30 2 × 1013 3 × 10-14 G8605-21 0.03 0.15 18 150 3000 3 × 10 -15 G8605-22 0.15 0.75 4 550 600 7 × 10 -15 G8605-23 0.5 2.5 2 1000 200 1 × 10 -14 G8605-25 -20 0.9 to 1.65 1.55 0.9 0.95 1.2 6 0.6 3500 60 3 × 1013 2 × 10-14 * Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)

InGaAs PIN photodiode G8605 series WAVELENGTH (µm) PHOTO SENSITIVITY (A/W) 2.0 0.5 (Typ.) 0.6 T=25 ˚C T= -10 ˚C T= -20 ˚C WAVELENGTH (µm) TEMPERATURE COEFFICIENT (%/ ˚C) (Typ. Ta=25 ˚C ) 02 6 1 0 1 2 1 6 INCIDENT LIGHT LEVEL (mW) RELATIVE SENSITIVITY (%) 100 102 (Typ. Ta=25 ˚C , λ=1.3 µm, RL=2 Ω , VR =0 V) 48 1 4 G8605-11/-21 G8605-12/-22 G8605-15/-25 G8605-13/-23 100 nA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) DARK CURRENT 10 nA 100 pA 10 pA 1 nA 1 µA (Typ. Ta=25 ˚C ) G8605-15/-25 G8605-13/-23 G8605-12/-22 G8605-11/-21 I Spectral response KIRDB0184EA I Photo sensitivity temperature characteristic KIRDB0042EA Spectral response shifts towards the short wavelength side when cooled. One-stage TE-cooled type: λc=1.67 µm Two-stage TE-cooled type: λc=1.65 µm I Photo sensitivity linearity KIRDB0241EA I Dark current vs. reverse voltage KIRDB0242EA Applying a reverse voltage increases dark current, but improves frequency characteristics and output linearity.

InGaAs PIN photodiode G8605 series 1 nF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 100 pF 1 pF 10 pF 10 nF (Typ. Ta=25 ˚C , f=1 MHz) G8605-11/-21 G8605-12/-22 G8605-13/-23 G8605-15/-25 1 GΩ -40 -20 0 40 60 80 SHUNT RESISTANCE 100 MΩ 1 MΩ 100 kΩ 10 MΩ 10 GΩ (Typ. VR =10 mV) G8605-13/-23 G8605-15/-25 G8605-12/-22 G8605-11/-21 ELEMENT TEMPERATURE ( ˚C) ELEMENT TEMPERATURE ( ˚C) RESISTANCE ( Ω ) 103 (Typ.) 104 105 106 -40 -20 0 20 0 0.4 0.8 1.2 1.6 CURRENT (A) ELEMENT TEMPERATURE (˚C) -40 -60 -20 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) ONE-STAGE TE-COOLED TYPE TWO-STAGE TE-COOLED TYPE 1.2 0 0.5 1.0 1.5 VOLTAGE (V) CURRENT (A) 1.0 0.6 0.8 1.4 1.6 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 0.4 0.2 TWO-STAGE TE-COOLED TYPE ONE-STAGE TE-COOLED TYPE I T erminal capacitance vs. reverse voltage I Shunt resistance vs. element temperature I Thermistor temperature characteristic I Cooling characteristics of TE-cooler I Current vs. voltage characteristics of TE-cooler KIRDB0115EA KIRDB0243EA KIRDB0244EA KIRDB0116EA KIRDB0231EA In applications requiring high-speed response, the lead length should be as short as possible to minimize the termi- nal capacitance.

InGaAs PIN photodiode G8605 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. Cat. No. KIRD1049E01 Apr. 2001 DN4 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 4.4 ± 0.2 6.4 ± 0.212 MIN. 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 6.7 ± 0.2 10 ± 0.212 MIN. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 0.45 LEAD PHOTOSENSITIVE SURFACE I Dimensional outlines (unit: mm) KIRDA0152EA KIRDA0153EA