G8370-03

G8370 HAMAMATSU | Alldatasheet

Document overview

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Technical content

Features

/K6C Low noise, low dark current /K6C Large active area /K6C Various active area sizes available

Applications

/K6C Laser monitor /K6C Optical power meter /K6C Laser diode life test InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm. I Specifications / Absolute maximum ratings Absolute maximum ratings Active area Reverse voltage VR Max. Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material *1 Package (mm) (V) (°C) (°C) G8370-01 ➀ /K TO-18 φ1 10 G8370-02 φ2 G8370-03 ➁ /K TO-5 φ3 5 G8370-05 ➂ /K TO-8 φ5 2 -40 to +85 -55 to +125 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range Peak sensitivity wavelength λp Photo sensitivity S Dark current ID VR=1 V Cut-off frequency fc VR=1 V RL=50 Ω -3 dB Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV λ=λp NEP λ=λpType No. (µm) (µm) 1.3 µm (A/W) λ=λp (A/W) Typ. (nA) Max. (nA) (MHz) (pF) (MΩ ) (cm·Hz 1/2/W) (W/Hz1/2) G8370-01 1 *2 5 *2 35 *2 90 *2 100 2 × 10 -14 G8370-02 52 5 45 5 02 5 4 × 10-14 G8370-03 15 75 2 1000 10 6 × 10-14 G8370-05 25 125 0.6 3500 3 5 × 1012 1 × 10-13 *1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak) *2: VR=5 V

InGaAs PIN photodiode G8370 series I Spectral response I Photo sensitivity temperature characteristic I Photo sensitivity linearity I Dark current vs. reverse voltage WAVELENGTH (µm) PHOTO SENSITIVITY (A/W) 2.0 0.5 (Typ. Ta=25 ˚C) 0.6 WAVELENGTH (µm) TEMPERATURE COEFFICIENT (%/ ˚C) (Typ. Ta=25 ˚C ) 02 6 1 0 1 2 1 6 INCIDENT LIGHT LEVEL (mW) RELATIVE SENSITIVITY (%) 100 102 (Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω , VR =0 V) 48 1 4 G8370-01 G8370-02 G8370-03 G8370-05 100 nA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) DARK CURRENT 10 nA 100 pA 10 pA 1 nA 1 µA (Typ. Ta=25 ˚C ) G8370-05 G8370-02 G8370-03 G8370-01 KIRDB0245EA KIRDB0246EA KIRDB0002EB KIRDB0042EA

InGaAs PIN photodiode G8370 series I Dimensional outlines (unit: mm) I Terminal capacitance vs. reverse voltage KIRDB0247EA I Shunt resistance vs. ambient temperature KIRDB0248EA KIRDA0154EC ➁ G8370-02/-03➀ G8370-01 1 nF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 100 pF 1 pF 10 pF 10 nF (Typ. Ta=25 ˚C , f=1 MHz) G8370-05 G8370-03 G8370-02 G8370-01 1 GΩ -40 -20 0 40 60 80 100 AMBIENT TEMPERATURE ( ˚C) SHUNT RESISTANCE 100 MΩ 1 MΩ 100 kΩ 10 MΩ 10 GΩ (Typ. VR =10 mV) G8370-03 G8370-02 G8370-01 G8370-05 KIRDA0155EB WINDOW 2.2 MIN. 4.7 ± 0.1 2.7 ± 0.2 3.7 ± 0.213 MIN. 5.4 ± 0.2 0.45 LEAD CASE 2.5 ± 0.2 PHOTOSENSITIVE SURFACE WINDOW 4.5 MIN. 2.5 ± 0.20.4 MAX. 8.3 ± 0.1 9.2 ± 0.2 4.9 ± 0.218 MIN. 0.45 LEAD CASE 5.1 ± 0.3 1.5 MAX. PHOTOSENSITIVE SURFACE

InGaAs PIN photodiode G8370 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. Cat. No. KIRD1050E03 Feb. 2002 DN ➂ G8370-05 0.45 LEAD 1.0 WINDOW 7.0 MIN. 12.4 ± 0.1 13.8 ± 0.2 7.5 ± 0.2 INDEX MARK 2.8 ± 0.2 0.5 4.9 ± 0.214 MIN. CASE PHOTOSENSITIVE SURFACE KIRDA0052EC