G7096-01

G4176 HAMAMATSU | Alldatasheet

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ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) Cat. No. LPRD1022E01 JAN 2003 IP http://www.hamamatsu.com PRELIMINARY DATA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: laser-g@lsr.hpk.co.jp G4176 G7096 G4176-01 G7096-01

FEATURES

G4176 : tr , tf = 30 ps (Typ.) G7096 : tr = 40 ps (Typ.) Low dark current G4176 : 100 pA (Ta=25 °C) Large photosensitive area 200 µm

APPLICATIONS

Optical high-speed waveform measurements Optical communications

DESCRIPTION

HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176- 01 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. 1/4-36UNS-2B 9.6 2.03.0 φ7.9 φ8.2 2.3 12 min. 3.6 1.2 φ5.4 φ4.7 BIAS / OUTPUT* OUTPUT / BIAS* φ0.45LEAD G4176 G7096 G4176-01 G7096-01 BIAS-TEE Optical InputElectric Output Power Supply + (or -) - (or +) BIASCASE G4176 (G7096) G4176 G7096 G4176-01 G7096-01 Output Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it DIMENSIONAL OUTLINES (Unit : mm) (BOTTOM VIEW) SENSITIVE SURFACE CASE CHIP OUTPUT/BIAS* *Both polarities of the bias voltage are available. (BOTTOM VIEW) CASE CHIP SENSITIVE SURFACE + (or -) - (or +) G4176-01 (G7096-01) Optical InputElectric Output Power Supply Coaxial Connector Case Lead 10 kΩ 100 Ω 10 nF CONNECTION EXAMPLES BIAS

Φ Top(a) Tstg Unit V mW mW Symbol λ λp A Unit nm nm mm mm2 Value 450 to 870 850 0.2 0.2 1 1 TO-5 (Unified with SMA connector) TO-18 Condition Vb = 7 V Vb = 7 V Radiant sensitivity Dark Current NEP* G4176 G4176-01 Terminal Capacitance G4176** G4176-01 Rise Time G4176 G4176-01 Fall Time G4176 G4176-01 S I d A/W pA Min. 0.2

0.2 X 10-15

λ = 850 nm ItemSymbolCondition ValueUnit Typ. 0.3 100

3 X 10-15

4 X 10-15

0.3 0.5 Max. 300 0.4 0.6 Ct tr tf 10 to 90 % 90 to 10 % λ = 850 nmW/Hz1/2 pF ps ps Wa elength (nm) Radiant Sensitivity (A/W) 100 10-1 10-2 10-3 500 300 900700 600 400 1000800 (Vb = 7 V) G4176 SERIES (Vb = 7 V) Output (arb. unit) Time (0.1ns/div) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 (Vb = 7 V) ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) Item Maximum Bias Voltage Maximum Light Input Pulsed Light CW to Pulsed Light Operating Temperature Storage Temperature ABSOLUTE MAXIMUM RATINGS (Ta=25°C) GENERAL CHARACTERISTICS (Ta=25°C) Condition Pulse width 1ns Pulse width 1ns Value -40 to +85 -40 to +100 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V) Item Spectral Response Range Peak Response Wavelength Effective Sensitive Area Chip Size Package G4176 G4176-01 *Noise Equivalent Power **Value on Chip Figure 1: Optical Pulse Response G4176 (Including time response of light source, bias-tee and oscilloscope) G4176-01 (Including time response of light source, assembly circuit and oscilloscope)Output (arb. unit) Time (0.1ns/div) Figure 2: Spectral Response Symbol Vb Φ Top(a) Tstg Unit V mW mW Symbol λ λp A Unit nm nm mm mm2 Value 850 to 1650 1500 0.2 0.2 1 1 TO-5 (Unified with SMA connector) TO-18 Condition Vb = 10 V Vb = 10 V Radiant sensitivity Dark Current NEP* G7096 G7096-01 Terminal Capacitance G7096** G7096-01 Rise Time G7096 G7096-01 Fall Time G7096 G7096-01 S I d A/W µA Min. 0.2

0.2 X 10-10

λ = 1.3 µm ItemSymbolCondition ValueUnit Typ. 0.4

2 X 10-10

3 X 10-10

0.7 0.9 120 160 Max. 0.8 1.0 100 160 200 Ct tr tf 10 to 90 % 90 to 10 % λ = 1.3 µmW/Hz1/2 pF ps ps W l th (µ) Radiant Sensitivity (A/W) (Vb = 10 V) G7096 SERIES (Vb = 10 V) Output (arb. unit) Time (0.1ns/div) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 (Vb = 10 V) Item Maximum Bias Voltage Maximum Light Input Pulsed Light CW to Pulsed Light Operating Temperature Storage Temperature ABSOLUTE MAXIMUM RATINGS (Ta=25°C) GENERAL CHARACTERISTICS (Ta=25°C) Condition Pulse width 1ns Pulse width 1ns Value -40 to +85 -40 to +100 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V) Item Spectral Response Range Peak Response Wavelength Effective Sensitive Area Chip Size Package G7096 G7096-01 *Noise Equivalent Power **Value on Chip Figure 3: Optical Pulse Response G7096 (Including time response of light source, bias-tee and oscilloscope) G7096-01 (Including time response of light source, assembly circuit and oscilloscope)Output (arb. unit) Time (0.1ns/div) Figure 4: Spectral Response 100 10-1 10-2 10-3

Φ Top(a) Tstg Unit V mW mW Symbol λ λp A Unit nm nm mm mm2 Value 450 to 870 850 0.2 0.2 1 1 TO-5 (Unified with SMA connector) TO-18 Condition Vb = 7 V Vb = 7 V Radiant sensitivity Dark Current NEP* G4176 G4176-01 Terminal Capacitance G4176** G4176-01 Rise Time G4176 G4176-01 Fall Time G4176 G4176-01 S I d A/W pA Min. 0.2 λ = 850 nm ItemSymbolCondition ValueUnit Typ. 0.3 100 0.3 0.5 Max. 300 0.4 0.6 Ct tr tf 10 to 90 % 90 to 10 % λ = 850 nmW/Hz1/2 pF ps ps Wa elength (nm) Radiant Sensitivity (A/W) 100 10-1 10-2 10-3 500 300 900700 600 400 1000800 (Vb = 7 V) G4176 SERIES (Vb = 7 V) Output (arb. unit) Time (0.1ns/div) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 (Vb = 7 V) ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) Item Maximum Bias Voltage Maximum Light Input Pulsed Light CW to Pulsed Light Operating Temperature Storage Temperature ABSOLUTE MAXIMUM RATINGS (Ta=25°C) GENERAL CHARACTERISTICS (Ta=25°C) Condition Pulse width 1ns Pulse width 1ns Value -40 to +85 -40 to +100 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V) Item Spectral Response Range Peak Response Wavelength Effective Sensitive Area Chip Size Package G4176 G4176-01 *Noise Equivalent Power **Value on Chip Figure 1: Optical Pulse Response G4176 (Including time response of light source, bias-tee and oscilloscope) G4176-01 (Including time response of light source, assembly circuit and oscilloscope)Output (arb. unit) Time (0.1ns/div) Figure 2: Spectral Response Symbol Vb Φ Top(a) Tstg Unit V mW mW Symbol λ λp A Unit nm nm mm mm2 Value 850 to 1650 1500 0.2 0.2 1 1 TO-5 (Unified with SMA connector) TO-18 Condition Vb = 10 V Vb = 10 V Radiant sensitivity Dark Current NEP* G7096 G7096-01 Terminal Capacitance G7096** G7096-01 Rise Time G7096 G7096-01 Fall Time G7096 G7096-01 S I d A/W µA Min. 0.2 λ = 1.3 µm ItemSymbolCondition ValueUnit Typ. 0.4 0.7 0.9 120 160 Max. 0.8 1.0 100 160 200 Ct tr tf 10 to 90 % 90 to 10 % λ = 1.3 µmW/Hz1/2 pF ps ps W l th (µ) Radiant Sensitivity (A/W) (Vb = 10 V) G7096 SERIES (Vb = 10 V) Output (arb. unit) Time (0.1ns/div) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 (Vb = 10 V) Item Maximum Bias Voltage Maximum Light Input Pulsed Light CW to Pulsed Light Operating Temperature Storage Temperature ABSOLUTE MAXIMUM RATINGS (Ta=25°C) GENERAL CHARACTERISTICS (Ta=25°C) Condition Pulse width 1ns Pulse width 1ns Value -40 to +85 -40 to +100 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V) Item Spectral Response Range Peak Response Wavelength Effective Sensitive Area Chip Size Package G7096 G7096-01 *Noise Equivalent Power **Value on Chip Figure 3: Optical Pulse Response G7096 (Including time response of light source, bias-tee and oscilloscope) G7096-01 (Including time response of light source, assembly circuit and oscilloscope)Output (arb. unit) Time (0.1ns/div) Figure 4: Spectral Response 100 10-1 10-2 10-3

ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) Cat. No. LPRD1022E01 JAN 2003 IP http://www.hamamatsu.com PRELIMINARY DATA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: laser-g@lsr.hpk.co.jp G4176 G7096 G4176-01 G7096-01 G4176 : tr , tf = 30 ps (Typ.) G7096 : tr = 40 ps (Typ.) Low dark current G4176 : 100 pA (Ta=25 °C) Large photosensitive area 200 µm Optical high-speed waveform measurements Optical communications HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176- 01 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. 1/4-36UNS-2B 9.6 2.03.0 φ7.9 φ8.2 2.3 12 min. 3.6 1.2 φ5.4 φ4.7 BIAS / OUTPUT* OUTPUT / BIAS* φ0.45LEAD G4176 G7096 G4176-01 G7096-01 BIAS-TEE Optical InputElectric Output Power Supply + (or -) - (or +) BIASCASE G4176 (G7096) G4176 G7096 G4176-01 G7096-01 Output Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it DIMENSIONAL OUTLINES (Unit : mm) (BOTTOM VIEW) SENSITIVE SURFACE CASE CHIP OUTPUT/BIAS* *Both polarities of the bias voltage are available. (BOTTOM VIEW) CASE CHIP SENSITIVE SURFACE + (or -) - (or +) G4176-01 (G7096-01) Optical InputElectric Output Power Supply Coaxial Connector Case Lead 10 kΩ 100 Ω 10 nF CONNECTION EXAMPLES BIAS