G6849 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Active area G6849 : /K66 2 mm quadrant element G6849-01: /K66 1 mm quadrant element /K6C Low noise /K6C High reliability

Applications

/K6C Spot light position detection /K6C Measurement equipment PHOTODIODE InGaAs PIN photodiode Quadrant type G6849 series I General ratings Parameter G6849 G6849-01 Unit Package TO-5 - Active area φ2/quadrant φ1/quadrant mm I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R 5V Operating temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +125 °C I Electrical and optical characteristics (Ta=25 °C, per 1 element) Spectral response range λ - 0.9 to 1.7 -- 0.9 to 1.7 -µ m Peak sensitivity wavelength λp - 1.55 - - 1.55 - µm Dark current ID VR=1 V - 0.5 5 - 0.15 1.5 nA Cut-off frequency fc VR=1 V, RL=50 Ω λ=1.3 µm, -3 dB - 30 - - 120 - MHz Terminal capacitance Ct VR=1 V, f=1 MHz - 100 - - 20 - pF Shunt resistance Rsh V R=10 mV - 50 - - 200 - MΩ Detectivity D∗ λ=λp - 5 × 1012 - - 5 × 1012 - cm·Hz1/2/W Noise equivalent power NEP λ=λp - 2 × 10 -14 - - 1 × 10 -14 -W / H z 1/2

InGaAs PIN photodiode G6849 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. WAVELENGTH (µm) PHOTO SENSITIVITY (A/W) 2.0 0.5 (Typ. Ta=25 ˚C) 0.6 WAVELENGTH (µm) TEMPERATURE COEFFICIENT (%/ ˚C) (Typ. Ta=25 ˚C ) G6849 G6849-01 100 nA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) DARK CURRENT 10 nA 100 pA 10 pA 1 nA 1 µA (Typ. Ta=25 ˚C) 10 GΩ -40 -20 0 40 60 80 100 AMBIENT TEMPERATURE ( ˚C ) SHUNT RESISTANCE 1 GΩ 10 MΩ 1 MΩ 100 MΩ 100 GΩ (Typ. VR =10 mV) G6849 G6849-01 9.1 ± 0.2 8.1 ± 0.1 5.9 ± 0.1ACTIVE AREA WINDOW DETAILS OF PHOTODIODE bd c a 0.1 5.84 3.1 ± 0.6 4.1 ± 0.2 13.0 ± 2.0 0.45 LEAD ANODE a NC ANODE b NC ANODE c NC ANODE d CATHODE (COMMON) PHOTOSENSITIVE SURFACE DETAILS OF PHOTODIODE 9.1 ± 0.2 5.84 3.1 ± 0.6 8.1 ± 0.2 5.9 ± 0.2 4.1 ± 0.2 13.0 ± 2.0 bd c a 0.03 0.45 LEAD ANODE a NC ANODE b NC ANODE c NC ANODE d CATHODE (COMMON) PHOTOSENSITIVE SURFACE ACTIVE AREA WINDOW 0.01 0.1 1 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 1 nF 10 pF 1 pF 100 pF 10 nF (Typ. Ta=25 ˚C, f=1 MHz) G6849-01 G6849 Cat. No. KIRD1042E02 Feb. 2002 DN I Spectral response KIRDB0002EB I Photo sensitivity temperature characteristic KIRDB0042EA I Dark current vs. reverse voltage KMIRB0016EB I T erminal capacitance vs. reverse voltage KMIRB0015EB I Shunt resistance vs. ambient temperature KMIRB0014EA I Dimensional outlines (unit: mm) KIRDA0059EA KIRDA0143EA G6849 G6849-01