G67150 HAMAMATSU | Alldatasheet

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/K6C 16-element array /K6C For simple measurement

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/K6C Near Infrared (NIR) spectrophotometer PHOTODIODE InGaAs PIN photodiode array 16-element array G7150/G7151-16 I General ratings Parameter G7150-16 G7151-16 Unit Package DIP - Active area 0.45 × 1 (× 16 elements) 0.08 × 0.2 (× 16 elements) mm I Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage V R 5V Operating temperature Topr -25 to +70 * °C Storage temperature Tstg -25 to +70 * °C * No condensation I Electrical and optical characteristics (Ta=25 °C, per 1 element) Spectral response range λ - 0.9 to 1.7 - - 0.9 to 1.7 - µm Peak sensitivity wavelength λp - 1.55 - - 1.55 - µm Dark current ID VR=1 V - 5 25 - 0.2 1 nA Cut-off frequency fc VR=1 V, RL=50 Ω λ=1.3 µm, -3 dB - 30 - - 300 - MHz Terminal capacitance Ct VR=1 V, f=1 MHz - 100 - - 10 - pF Shunt resistance Rsh V R=10 mV - 100 - - 1000 - MΩ Detectivity D∗ λ=λp - 5 × 1012 - - 5 × 1012 - cm·Hz1/2/W Noise equivalent power NEP λ=λp -2 × 1 0 -14 - - 3 × 10 -15 -W / H z 1/2 G7150/G7151-16 may be damaged by Electro Static Discharge, etc. Be carefull when using G7150/G7151-16.

InGaAs PIN photodiode array G7150/G7151-16 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. WAVELENGTH (µm) PHOTO SENSITIVITY (A/W) 2.0 0.5 (Typ. Ta=25 ˚C) 0.6 WAVELENGTH (µm) TEMPERATURE COEFFICIENT (%/ ˚C) (Typ. Ta=25 ˚C ) 10 GΩ -40 -20 0 40 60 80 100 AMBIENT TEMPERATURE ( ˚C) SHUNT RESISTANCE 1 GΩ 10 MΩ 1 MΩ 100 MΩ 100 GΩ (Typ. VR =10 mV) G7150-16 G7151-16 0.25 ACTIVE AREA (16 ×) 0.08 × 0.2 22.9 ± 0.3 1.1 ± 0.2 2.54 ± 0.15 0.46 0.8 ± 0.3 PIN No. * CATHODE COMMON DETECTOR PIN No. DETECTOR PIN No. DETECTOR PIN No. DETECTOR WINDOW PHOTOSENSITIVE SURFACE INDEX MARK 100 1000 10000 0.01 0.1 1 10 (Typ. Ta=25 ˚C) G7150-16 G7151-16 DARK CURRENT (pA) REVERSE VOLTAGE (V) TERMINAL CAPACITANCE (pF) REVERSE VOLTAGE 1000 100 0.01 0.1 1 10 (Typ. Ta=25 ˚C, f=1 MHz) G7150-16 G7151-16 Cat. No. KIRD1043E06 Feb. 2007 DN I Spectral response KIRDB0002EB I Photo sensitivity temperature characteristic KIRDB0042EA I Dark current vs. reverse voltage I T erminal capacitance vs. reverse voltage I Shunt resistance vs. ambient temperature KMIRB0013EA I Dimensional outlines (unit: mm) KIRDA0144EC KIRDA0030EE KIRDB0254EA KIRDB0255EB G7150-16 G7151-16 PIN No. DETECTOR PIN No. DETECTOR PIN No. DETECTOR PIN No. DETECTOR 0.25 WINDOW ACTIVE AREA (16 ×) 0.45 × 1 22.9 ± 0.3 1.1 ± 0.2 2.54 ± 0.15 0.46 1.0 ± 0.2 PHOTOSENSITIVE SURFACE INDEX MARK * CATHODE COMMON