G5852-103

G8422 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Cut-off wavelength: 2.1 µm /K6C 3-pin TO-18 package: low price /K6C TE-cooled type TO-8 package: low dark current /K6C Active area: /K66 0.3 to /K66 3 mm

Applications

/K6C Gas analyzer /K6C Water content analyzer /K6C NIR (Near Infrared) photometry I Specifications / Absolute maximum ratings Absolute maximum ratings Active area Thermistor power dissipation TE-cooler allowable current Reverse voltage VR Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline Package Cooling (mm) (mW) (A) (V) (°C) (°C) G8422-03 φ0.3 G8422-05 φ0.5 G8372-01 ➀ TO-18 G8372-03 ➁ TO-5 Non-cooled - - -40 to +85 -55 to +125 G5852-103 φ0.3 G5852-11 φ1 G5852-13 ➂ TO-8 One-stage TE-cooled 1.5 G5852-203 φ0.3 G5852-21 φ1 G5852-23 ➃ TO-8 Two-stage TE-cooled 0.2 1.0 -40 to +70 -55 to +85 I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Element Temperature T Spectral response range λ Peak sensitivity wavelength λp Photo sensitivity S λ=λp Dark current ID VR=1 V Cut-off frequency fc VR=1 V RL=50 Ω Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV λ=λp NEP λ=λpType No. (°C) (µm) (µm) (A/W) Typ. (nA) Max. (nA) (MHz) (pF) (MΩ ) (cm·Hz 1/2 /W) (W/Hz1/2) G8422-03 55 550 100 8 0.9 1.5 × 10 -13 G8422-05 125 1250 80 20 0.3 2.5 × 10 -13 G8372-01 500 5000 40 80 0.1 4 × 10 -13 G8372-03 25 0.9 to 2.1 5 (µA) 50 (µA) 3 800 0.01 2.5 × 1011 1.5 × 10-12 G5852-103 5.5 55 100 8 9 5 × 10 -14 G5852-11 50 500 40 80 1 1 × 10 -13 G5852-13 -10 0.9 to 2.07 500 5000 3 800 0.1 8 × 1011 4 × 10-13 G5852-203 3 30 100 8 18 3 × 10 -14 G5852-21 25 250 40 80 2 8 × 10 -14 G5852-23 -20 0.9 to 2.05 1.95 1.2 250 2500 3 800 0.2 1.2 × 1012 3 × 10-13

InGaAs PIN photodiode G8422/G8372/G5852 series WAVELENGTH (µm) (Typ.) PHOTO SENSITIVITY (A/W) 1.41.21.00.8 0.2 0.4 1.4 1.2 1.0 0.8 0.6 T= -10 ˚C T= -20 ˚C T=25 ˚C 10.8 1.6 2 2.2 2.6 WAVELENGTH (µm) TEMPERATURE COEFFICIENT (%/˚C) (Typ.) 1.2 1.4 1.8 2.4 G8372-03 G8372-01 G8422-05 G8422-03 10 µA 0.01 0.1 1 10 REVERSE VOLTAGE (V) DARK CURRENT 1 µA 10 pA 100 nA 100 µA (Typ. Ta=25 ˚C ) 100 nA 0.01 0.1 1 10 REVERSE VOLTAGE (V) DARK CURRENT 10 nA 100 pA 1 nA 1 µA (Typ.) 1 nF 0.01 0.1 1 10 REVERSE VOLTAGE (V) TERMINAL CAPACITANCE 100 pF 1 pF 10 pF 10 nF (Typ. Ta=25 ˚C, f=1 MHz) G8372-03 G5852-13/-23 G8372-01 G5852-11/-21 G8422-03 G5852-103/-203 G8422-05 1 MΩ -40 -20 0 20 40 60 80 90 100 ELEMENT TEMPERATURE ( ˚C) 100 kΩ 10 kΩ 100 Ω 1 kΩ 10 MΩ (Typ. VR =10 mV) G8422-03 G5852-103/-203 G8422-05 G8372-01 G5852-11/-21 G8372-03 G5852-13/-23 SHUNT RESISTANCE I Spectral response KIRDB0226EA I Photo sensitivity temperature characteristic KIRDB0207EA I Dark current vs. reverse voltage KIRDB0235EA KIRDB0228EA I T erminal capacitance vs. reverse voltage KIRDB0236EA I Shunt resistance vs. element temperature KIRDB0237EA Non-cooled type TE-cooled type

InGaAs PIN photodiode G8422/G8372/G5852 series ELEMENT TEMPERATURE (˚C) RESISTANCE ( Ω ) 103 (Typ.) 104 105 106 -40 -20 0 20 0 0.4 0.8 1.2 1.6 CURRENT (A) ELEMENT TEMPERATURE (˚C) -40 -60 -20 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) ONE-STAGE TE-COOLED TYPE TWO-STAGE TE-COOLED TYPE 1.2 0 0.5 1.0 1.5 VOLTAGE (V) CURRENT (A) 1.0 0.6 0.8 1.4 1.6 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 0.4 0.2 TWO-STAGE TE-COOLED TYPE ONE-STAGE TE-COOLED TYPE I Thermistor temperature characteristic KIRDB0116EA I Cooling characteristics of TE-cooler KIRDB0231EA I Current vs. voltage characteristics of TE-cooler KIRDB0115EA

InGaAs PIN photodiode G8422/G8372/G5852 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. Cat. No. KIRD1047E02 Sep. 2001 DN DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 4.4 ± 0.2 6.4 ± 0.212 MIN. 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE WINDOW 3.0 ± 0.1 4.7 ± 0.1 2.7 ± 0.2 3.6 ± 0.213 MIN. 5.4 ± 0.2 0.45 LEAD CASE 2.5 ± 0.2 PHOTOSENSITIVE SURFACE WINDOW 5.9 ± 0.1 2.5 ± 0.2 0.15 MAX. 0.4 MAX. 8.1 ± 0.1 9.2 ± 0.2 4.2 ± 0.218 MIN. 0.45 LEAD CASE 5.1 ± 0.3 1.5 MAX. PHOTOSENSITIVE SURFACE DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 6.7 ± 0.2 10 ± 0.212 MIN. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 0.45 LEAD PHOTOSENSITIVE SURFACE I Dimensional outline (unit: mm) KIRDA0150EA KIRDA0151EA KIRDA0029EB ➀ G8422-03/-05, G8372-01 ➁ G8372-03 KIRDA0031EB