G12460-0606S

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InGaAs area image sensor G12460-0606S Electrical and optical characteristics (Ta=25 °C, Td=0 °C, Vdd=5 V, PD_bias=4.5 V) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 1.12 to 1.9 - μm Peak sensitivity wavelength λp - 1.75 - μm Photosensitivity S λ=λp 1.0 1.1 - A/W Conversion effi ciency CE - 1600 - nV/e - Saturation charge Qsat - 1.3 - Me - Saturation output voltage Vsat After subtracting dark output 1.5 2.0 - V Photoresponse nonuniformity*1 PRNU After subtracting dark output, Integration time: 1 ms - ±10 ±20 % Dark voltage V D Integration time: 2 ms 1.0 1.3 1.6 V Dark current ID - 8 20 pA Dark output nonuniformity DSNU Integration time: 2 ms - ±0.2 ±0.5 V Readout noise Nr Integration time: 0.1 ms - 800 1500 μV rms Dynamic range DR - 2500 - - Defective pixel*2 -- - 1 % *1: Measured at one-half of the saturation, excluding fi rst and last pixels on each row *2: Pixels with photoresponse nonuniformity (integration time: 1 ms), readout noise, dark current, dark output, DSNU, or saturation output voltage higher than the maximum value One or less cluster of four or more contiguous defective pixels <Examples of four contiguous defective pixels> Normal pixel Defective pixel KMIRC0060EB Element structure Parameter Specifi cation Unit Image size 3.2 × 3.2 mm Cooling One-stage TE-cooled - Number of total pixels 4096 (64 × 64) pixels Number of effective pixels 4096 (64 × 64) pixels Pixel size 50 × 50 μm Pixel pitch 50 μm Package TO-8 16-pin metal (refer to dimensional outline) - Window Anti-refl ective coating borosilicate glass - Absolute maximum ratings Parameter Symbol Value Unit Supply voltage Vdd -0.3 to +5.5 V Clock pulse voltage V(MCLK) Vdd + 0.5 V Operating temperature Topr -10 to +60 °C Storage temperature Tstg -20 to +70 °C TE-cooler allowable current Ic 1.3 A TE-cooler allowable voltage Vc 1.9 V Thermistor power dissipation Pth 0.2 mW Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.

InGaAs area image sensor G12460-0606S Photodiode Reset Switch Sample-and-hold Switch Whole image sensor 1 pixel PD_bias Vdd 0.1 μF Vb1 Vss AD_TRIG VIDEO THERM THERM External input MCLK MSP Shift register Thermistor Offset compensation circuit Timing generator TE(+) TE(-) One-stage TE-cooler KMIRC0063ED Equivalent circuit Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.9 5 5.1 V Supply current I(Vdd) - 30 60 mA Ground Vss - 0 - V Element bias PD_bias 4.4 4.5 4.6 V Element bias current I(PDbias) - - 1 mA Video output voltage High VH - 3.2 - VLow VL - 1.2 - Clock frequency f - - 40 MHz Video data rate fV - f/8 - MHz Thermistor resistance Rth 8.2 9 9.8 kΩ

InGaAs area image sensor G12460-0606S Connection example KMIRC0075EA Measurement board VIDEO (signal output) AD_TRIG (output for A/D conversion) (Reference) Parameter values VR1 Symbol 10 Ω 10 kΩ 330 pF 0.1 μF Value Power supply for analog buffer (A) +15 V-15 VGND Power supply for digital buffer (D) +5 VGND Power supply for sensor drive +5 VGND VR1 G12460-0606S PD_bias R1 C2 (Reference) Buffer Symbol AD847 TC74VHCT541 Type no. Vb1Vdd TE(+) TE(-) THERM THERM Temperature contorol circuit +5 V (D) +5 V (D) -15 V (A) +15 V (A) +5 V (D) MCLK (input) MSP (input)

InGaAs area image sensor G12460-0606S KMIRC0044EC (Video űŦųŪŰť)

8 MCLK 94 MCLK*2 8 MCLK 8 MCLK

One frame scanning period [64 rows × 64 columns (including blank) × 8 MCLK] VIDEO (output) MCLK (input) MSP (input) AD_TRIG (output)

8 MCLK 6 MCLK

(Blank period)(Blank period) *1: A minimum number of MCLK of integration time is 40 MCLK. *2: There are blanks of 94 MCLK between each row. *3: A minimum number of MCLK of reset period is 200 MCLK.

8 MCLK

(1 ch) (2 ch) (65 ch) (66 ch) (4096 ch) (Integration time)*1 (Reset period)*3 tr(MCLK)tf(MCLK) Integration time tf(MSP) tr(MSP) t2 t1 t3 tpw(MSP) (Blank period) tpw(MCLK)

90 MCLK

Parameter Symbol Min. Typ. Max. Unit Clock pulse voltage High V(MCLK) Vdd - 0.5 Vdd Vdd + 0.5 V Low 0 0 0.5 V Clock pulse rise/fall times tr(MCLK) 01 0 1 2 n stf(MCLK) Clock pulse width tpw(MCLK) 10 - - ns Start pulse voltage High V(MSP) Vdd - 0.5 Vdd Vdd + 0.5 V Low 0 0 0.5 V Start pulse rise/fall times tr(MSP) 01 0 1 2 n stf(MSP) Start pulse width*3 tpw(MSP) 0.001 - 2 ms Start (rise) timing*4 t1 10 - - ns Start (fall) timing*4 t2 10 - - ns Output setting time t3 - - 50 ns *3: Integration time max.=2 ms *4: Setting these timings shorter than minimum value may delay the operation by one MCLK pulse and cause malfunction. Timing chart The video output from a single pixel is equal to 8 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for set ting the integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V) , each control signal s tarts on the falling edge of the MCLK and frame scan is performed during the high period of the MSP.

InGaAs area image sensor G12460-0606S Photosensitivity (A/W) Wavelength (μm) 1.2 1.0 0.8 0.6 0.4 0.2 0.8 1.0 (Typ. Ta=25 °C) Relative sensitivity (%) Wavelength (μm) 100 1.75 1.8 1.85 1.951.9 (Typ.) 25 °C 0 °C -10 °C KMIRB0078EA KMIRB0087EA Temperature (°C) Thermistor resistance (kΩ) (Typ.) 0-10 -20 20 40 60 70 503010 Current (A) Element temperature (°C) (Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W) -0.4 1.41.2 -10 -20 KMIRB0067EA KMIRB0054ED Spectral response Photosensitivity temperature characteristics Thermistor temperature characteristics Cooling characteristics (TE-cooler) There is the following relation between the thermistor resistance and temperature (°C). R1: Resistance at T1 (°C) R2: Resistance at T2 (°C) B: B constant (B=3410 K ± 2%) Thermistor resistance=9 kΩ (at 25 °C)

InGaAs area image sensor G12460-0606S 9.5 ± 0.2 Position accuracy of photosensitive area center with respect to cap center -0.5≤X≤+0.5 -0.5≤Y≤+0.5 Package material: kovar metal Window material: borosilicate glass with anti-reflective coating Window sealing method: hermetic 5.7 ± 0.2 1.9 ± 0.2 Window ϕ10.0 ± 0.2 ϕ14.0 ± 0.2 ϕ15.3 ± 0.2 4.8 ± 0.3 10.0 ± 0.223 ± 1ϕ0.45 Lead Photosensitive area 64 ch1 ch 4096 ch KMIRA0021EB Dimensional outline (unit: mm) Voltage (V) Current (A) (Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 KMIRB0055ED Current vs. voltage (TE-cooler)

InGaAs area image sensor G12460-0606S Pin connections Pin no. Name Input/Output Function Remark

1 Vss Input 0 V ground 0 V

2 Vdd Input +5 V supply voltage 5 V

3 MCLK Input Clock pulse for timing generator Falling synchronous pulse

4 AD_TRIG Output Signal for A/D sampling Falling synchronous pulse

5 MSP Input Clock pulse for fl ame scan start

8 Vdd Input +5 V supply voltage 5 V

9 PD_bias Input Photodiode bias voltage 4.5 V 10 Vb1 Output Pixel bias voltage 1.27 V

11 NC - -

12 VIDEO Output Video output 1.2 to 3.2 V

13 TE (-) Input TE-cooler (-)

14 THERM Output Thermistor

15 THERM Output Thermistor

16 TE (+) Input TE-cooler (+)

• Do not connect anything to the NC terminals. Note: Connect a bypass capacitor of 0.1 μF to the Vb1 terminal. Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect th is de- vice from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that n o spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder ing should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Handle the device within the temperature range specifi ed in the absolute maximum ratings. Operating or storing the device at an exces- sively high temperature and humidity may cause variations in performance characteristics and must be avoided.

Cat. No. KMIR1023E03 May 2015 DN InGaAs area image sensor G12460-0606S www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of May, 2015. Related information ∙ Disclaimer ∙ Image sensors Precautions www.hamamatsu.com/sp/ssd/doc_en.html