G12430-016D

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InGaAs PIN photodiode arrays 16/32/46 element InGaAs array for near IR detection G12430 series www.hamamatsu.com 1 Structure Designed for simple measurement 16, 32, or 46 element array Large photosensitive area size The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP (dual inline package). It can be used to perform simple spectroscopic analysis. NIR spectrophotometers Features Applications Parameter G12430-016D G12430-032D G12430-046D Unit Cooling Room temperature type - Number of elements 16 32 46 elements Elements size 0.45 × 1 0.2 × 1 mm Element pitch 0.5 0.25 mm Package 18-pin ceramic DIP 40-pin ceramic DIP 48-pin ceramic DIP - Window material Borosilicate glass - Static electricity can damage or degrade the G12430 series. Use caution when handling. Details of photosensitive area H x V 32 mm Number of elements Unit 0.45 x 0.5 0.2 0.25 H V KIRDC0118EB

InGaAs PIN photodiode arrays G12430 series Absolute maximum ratings (Ta=25 °C) Parameter Symbol Value Unit Reverse voltage VR 5V Operating temperature Topr -20 to +70* °C Storage temper ature Tstg -20 to +85* °C Soldering conditions - 260 ° C or less, within 5 s - * No condensation Note: Exceeding the absolute maximum r atings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per element) Spectral response Dark current ID VR=1 V - 500 2500 - 250 1250 - 250 1250 pA Dark current temperature coeffi cient ΔTID VR=10 mV - 1.1 - - 1.1 - - 1.1 - times/ °C Cutoff frequency fc VR=1 V, RL=50 Ω λ=1.3 μm, -3 dB 15 30 - 25 60 - 25 60 - MHz Terminal capacitance Ct VR=1 V, f=1 MHz - 70 100 - 35 60 - 35 60 pF Shunt resistance Rsh V R=10 mV 20 100 - 40 200 - 40 200 - M Ω Detectivity D* λ=λp 2 × 1012 5 × 1012 - 2 × 1012 5 × 1012 - 2 × 1012 5 × 1012 - cm·Hz1/2/W Noise equivalent power NEP λ=λp- 1.4 × 10-14 3.5 × 10-14 - 1 × 10-14 2.4 × 10-14 - 1 × 10-14 2.4 × 10-14 W/Hz1/2 Spectral response Spectral transmittance of window material Wavelength (μm) Photosensitivity (A/W) 1.8 0.6 0.4 0.2 0.8 (Typ. Ta=25 °C) 1.0 Wavelength (μm) Transmittance (%) 100 (Typ. Ta=25 °C) KIRDB0565EA KIRDB0566EA

InGaAs PIN photodiode arrays G12430 series G12430-016D G12430-032D/-046D Photosensitivity temperature characteristics Cross-talk characteristics Linearity Wavelength (μm) Temperature coefficient of sensitivity (%/°C) (Typ. Ta=25 °C) Position on photosensitive area (mm) Relative sensitivity (%) (Typ. Ta=25 °C, λ=1.55 μm, VR=0 V, light spot size: approx. ϕ10 μm) -0.5 0 0.5 1.0-1.0 0.1 0.01 100 Incident light level (mW) Relative sensitivity (%) (Typ. Ta=25 °C, λ=1.55 μm, light spot size:ϕ50 μm) 123 98 7 6 541 00 100 G12430-032D /-046D G12430-016D VR=0 V VR=1 V Position on photosensitive area (mm) Relative sensitivity (%) 0.250-0.25 0.5-0.5 0.01 100 0.1 (Typ. Ta=25 °C, λ=1.55 μm, VR=0 V, light spot size: approx. ϕ10 μm) KIRDB0042EA KIRDB0568EA KIRDB0567A KIRDB0569EA

InGaAs PIN photodiode arrays G12430 series Shunt resistance vs. ambient temperature KIRDB0571EA 10 GΩ -30 -10 -20 0 40 6050 70 80 Ambient temperature (°C) Shunt resistance 1 GΩ 10 MΩ 1 MΩ 100 MΩ 100 GΩ (Typ.) 20 3010 G12430-016D G12430-032D/-046D Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage KIRDB0570EA KIRDB0572EA 100 1000 0.01 0.1 1 10 (Typ. Ta=25 °C) Dark current (pA) Reverse voltage (V) G12430-032D/-046D G12430-016D 100 0.1 1 10 Terminal capacitance (pF) Reverse voltage (V) G12430-016D G12430-032D/-046D (Typ. Ta=25 °C)

InGaAs PIN photodiode arrays G12430 series Dimensional outlines (unit: mm) KIRDA0237EA KIRDA0238EA G12430-016D G12430-032D 0.25 ± 0.05 7.62 ± 0.25 1.65 ± 0.2 Photosensitive surface Window Package material: Ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: 1.47 Window thickness: 0.5 ± 0.05 AR coat: None Window sealing method: Resin sealing Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° 20.7 ± 0.1 22.86 ± 0.25 6.7 ± 0.1 7.49 ± 0.2 7.87 ± 0.25 2.16 ± 0.25 0.5 ± 0.05 4.0 min. 0.89 ± 0.25 1.37 ± 0.2 0.46 ± 0.05 20.32 ± 0.15 2.54 ± 0.15 Photosensitive area1 chIndex mark 0.25 ± 0.05 15.24 ± 0.25 1.30 ± 0.15 Window 1 ch 8.5 ± 0.35 15.11 ± 0.25 15.49 ± 0.25 3.0 ± 0.3 1.27 ± 0.25 4.0 min. 22.8 ± 0.35 50.8 ± 0.51 48.26 ± 0.2 Photosensitive areaIndex mark 4039 1 2 1920 2221 Photosensitive surface Package material: Ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: 1.47 Window thickness: 0.75 ± 0.05 AR coat: None Window sealing method: Resin sealing Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5°

InGaAs PIN photodiode arrays G12430 series KIRDA0239EA G12430-046D 0.25 ± 0.05 15.24 ± 0.25 1.3 ± 0.15 Window Photosensitive area1 ch Package material: Ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: 1.47 Window thickness: 0.75 ± 0.05 AR coat: None Window sealing method: Resin sealing Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° 8.5 ± 0.35 15.11 ± 0.25 15.49 ± 0.25 3.0 ± 0.34 ± 1 22.8 ± 0.35 65.0 ± 0.65 2.54 ± 0.13 58.42 ± 0.2 0.46 ± 0.05 Index mark 48 47 12 23 24 2625 Photosensitive surface Pin no. G12430-016D G12430-032D G12430-046D Pin no. G12430-016D G12430-032D G12430-046D

1 KC KC KC 25 - 27 KC

10 KC 16 18 34 - 9 29

Cat. No. KIRD1124E02 Mar. 2014 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of March, 2014. InGaAs PIN photodiode arrays G12430 series Operating circuit KMPDC0001EA Photodiode array Multiplex In the most generally used circuit, op amplifi ers are connected to each channel to read the output in real time. The output of an op am- plifi er is of low impedance and thus can be easily multiplexed. Related information www.hamamatsu.com/sp/ssd/doc_ja.html Precautions

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