G12242-0707W

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Near infrared area image sensor with 128 × 128 pixels www.hamamatsu.com Spectral response range: 0.95 to 1.7 μm High sensitivity: 1 μV/e- Thermal image monitor Laser beam profi ler Near infrared image detectionFrame rate: 258 fps max. Global shutter mode and rolling shutter mode switchable Simple operation (built-in timing generator) Two-stage TE-cooled Low cost Foreign object detection The G12242-0707W has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by indium bumps. The timing generator in the ROIC provides an analog video output and AD-TRIG output which are obtained by just supplying a master clock (MCLK) and master start pulse (MSP) as digital inputs from external sources. The G12242-0707W has 128 × 128 pixels arrayed at a 20 μm pitch and their signals are read out from a video line. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium pumps. Electrical signals in the ROIC are converted into voltage signals by charge ampli fi ers and then sequentially output from the video line by the shift register. The G12242-0707W is hermetically sealed in a TO-8 package together with a two- stage thermoelectric cooler to deliver low-cost yet highly stable operation. Features Applications Block diagram Vertical shift register Horizontal shift register Start End VIDEO (signal voltage) VIDEO reset voltage) Signal processing circuit 128 × 128 pixels KMIRC0068EA The G12242-0707W operates in either global shutter mode or rolling shut- ter mode which are switchable. The operation of the readout circuit in each mode is described below. Rolling shutter mode The sample-and-hold switches in all pixels are always ON. Pixel scanning starts from the top left point as shown in the figure on the right. The vertical shift register scans from top to bottom while sequentially se- lecting each row. The following operations  to ‘ are performed on each pixel of the selected row.  Transfers the integrated optical signal information to the signal processing circuit as a signal voltage, and samples and holds the signal voltage. Resets each pixel after having transferred the signal, transfers the reset signal voltage to the signal processing circuit, and samples and holds the reset signal voltage. ‘ The horizontal shift register performs a sequential scan to output the signal voltage and reset signal voltage as serial data. The offset voltage in each pixel can be eliminated by fi nding a difference between the signal voltage and the reset signal voltage with a circuit outside the sensor. After the above operations  to ‘ are complete, the reset switch for each pixel on the selected row turns off and signal integration begins. At the same time, the vertical shift register shifts by one row to select the next row and the operations  to ‘ are repeated. After the vertical shift register advances to the 128th row, the master start pulse (MSP), which is a frame scan signal, changes from low (0 V) to high (5 V), and the next frame scan begins when the MCLK goes low. The signal integration time is the time period from right after the end of the n-th row scan to the timing for holding the optical signal information integrated on the n-th row in the next frame.

InGaAs area image sensor G12242-0707W Structure Absolute maximum ratings Parameter Specifi cation Unit Image size 2.56 × 2.56 mm Cooling Two-stage TE-cooled - Number of total pixels 16384 (128 × 128) pixels Number of effective pixels 16384 (128 × 128) pixels Pixel size 20 × 20 μm Pixel pitch 20 μ m Package TO-8 16-pin metal (refer to dimensional outline) - Window Borosilicate glass with anti-refl ective coating - Parameter Symbol Value Unit Supply voltage Vdd -0.3 to +5.5 V Clock pulse voltage V(MCLK) Vdd +0.5 V Start pulse voltage V(MSP) Vdd +0.5 V Operating temperature Topr -10 to +60 °C Storage temperature Tstg -20 to +70 °C TE-cooler allowable current Ic 0.9 A TE-cooler allowable voltage Vc 0.8 V Thermistor power dissipation Pth 0.2 mW Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Global shutter mode In this mode, the integration time is equal to the low period of the MSP and the output voltage is sampled and held simultaneously at all pixels. Then the signals are sequentially read out in the same way as the rolling shutter mode. The vertical shift register scans from top to bottom while sequentially selecting each row. The following operations  to ‘ are per- formed on each pixel of the selected row:  Transfers the optical signal information sampled and held in each pixel to the signal processing circuit as a signal voltage, and sam- ples and holds the signal voltage.  Resets each pixel after having transferred the signal, transfers the reset signal voltage to the signal processing circuit, an d samples and holds the reset signal voltage. ‘ The horizontal shift register performs a sequential scan to output the signal voltage and reset signal voltage as serial data. The offset voltage in each pixel can be eliminated by fi nding a difference between the signal voltage and the reset voltage with a circuit outside the sensor. Then the vertical shift register shifts by one row to select the next row and the operations  to ‘ are repeated. When the MSP, which is a frame scan signal, goes low after the vertical shift register advances to the 128th row, the reset swi tches for all pixels simultaneously turn off and the next frame integration begins.

InGaAs area image sensor G12242-0707W Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.9 5 5.1 V Supply current I(Vdd) - 20 40 mA Ground Vss - 0 - V Element bias PD_bias 2.9 3.0 3.1 V Element bias current I(PD_bias) - - 1 mA Video output v oltage (VIDEO_S) Video output voltage (VIDEO_R) VR 2.8 2.9 3.0 V Clock frequency f - - 20 MHz Video data rate fV - f/4 - MHz Thermistor resistance Rth 8.2 9 9.8 kΩ Electrical and optical characteristics (Td=15 °C, Vdd=5 V, PD_bias=3 V) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 0.95 to 1. 7 - μm Peak sensitivity wavelength λp - 1.55 - μm Photosensitivity S λ=λp 0.7 0.8 - A/W Conversion effi ciency CE Cf=0.08 pF -1- μV/e- Saturation charge Qsat - 1000 - ke - Saturation output voltage Vsat 0.6 1.1 - V Photoresponse nonuniformity*1 PRNU After subtracting dark output, Integration time=5 ms - ±10 ±20 % Dark output VD -0.2 0.3 0.5 V Dark current ID - 0.5 2.5 pA Dark output nonuniformity DSNU - ±0.05 ±0.2 V Temperature coeffi cient of dark output ΔTDS - 1.1 - times/°C Readout noise Nr Integration time=10 ms - 500 1000 μV rms Dynamic range DR - 2200 - - Defective pixel*2 -- - 1 % *1: Measured at one-half of the saturation, excluding fi rst and last pixels on each row *2: Pixels with photoresponse nonuniformity (integration time 5 ms), readout noise, or dark current higher than the maiximum value One or less cluster of four or more contiguous defective pixels <Examples of four contiguous defective pixels> Normal pixel Defective pixel KMIRC0060EB

InGaAs area image sensor G12242-0707W Equivalent circuit KMIRC0072EB Photodiode Reset switch Sample and hold switch Whole image sensor External input One pixel 0.1 μF PD_bias Cf Vb1 AD_Trig VIDEO_S VIDEO_R Shift register Timing generator THERM THERMThermistor Two-stage TE-cooler MCLK MSP Mode 1 Mode 2TE(+)Vref TE(-) Vdd Vss

InGaAs area image sensor G12242-0707W Connection example Measurement board VIDEO_S (signal output) VIDEO_R (reset signal output) AD_TRIG (output for A/D conversion) (Reference) Parameter values (Reference) Buffer VR1 Vb1 Vref VR1 Vdd G12242-0707W PD_biasR1 VR1 MCLK (input) MSP (input) Mode 1 (input) Mode 2 (input) Symbol 10 Ω 10 kΩ 330 pF 0.1 μF Value Symbol AD847 TC74HCT541 IC +5 V(D) +5 V(D) -15 V(A) -15 V(A) +15 V(A) +15 V(A) +5 V(D) +5 V(D) +5 V(D) Supply voltage for digital buffer (D) +5 VGND Supply voltage for analog buffer (A) +15 V-15 VGND Supply voltage for sensor drive +5 VGND TE(+) TE(-) THERM THERM Temperature control circuit KMIRC0070EB

InGaAs area image sensor G12242-0707W Timing chart The video output from a single pixel is equal to 4 MCLK (master clock) pulses. The MSP (master start pulse) is a signal for set ting the integration time, so making the low (0 V) period of the MSP longer will extend the integration time. The MSP also functions as a signal that triggers each control signal to perform frame scan. When the MSP goes from low (0 V) to high (5 V) , each control signal s tarts on the falling edge of the MCLK and frame scan is performed during the high period of the MSP. In the global shutter mode, the low (0 V) period of the MSP serves as the integration time. In the rolling shutter mode, the integration time for the n-th row is the tim e period from right after the end of the n-th row scan to the timing for holding the optical signal information integrated on the n-th r ow in the next frame. The timing charts when operated at a MCLK frequency of 20 MHz are shown below. AD_TRIG (output) VIDEO_S (output) VIDEO_R (output) AD_TRIG VIDEO_S 0.2 μs n-127 ch n-128 ch Dummy (2 clocks) (n+1)-1 ch 0.2 μs 0.2 μs 0.2 μs4.6 μs MCLK (input) MSP (input) (Blank period)*2 (Blank period) (Blank period) (Blank period) (Blank period) (Blank period)(1-1 ch) (2-1 ch) (3-1 ch)(2-128 ch) (3-128 ch) (1-1 ch) B One frame scanning period [(128 rows × 128 columns × 0.2 μs) (including blank)] Integration time for the first row during rolling shutter mode*4 3.839 ms Integration time during global shutter mode MSP Low űŦųŪŰť*1 MSP Low űŦųŪŰť* A tpw(MCLK) tr(MCLK)tf(MCLK) tf(MSP) tr(MSP) tpw(MSP) t2 t1 *1: The minimum number of MCLK pulses during the MSP low period is 20. The integration time can be changed by adjusting the MSP low period. Rolling shutter mode: Integration time = MSP low period + 3.838 ms Global shutter mode: Integration time = MSP low period *2: There is a blank of 4.6 μs between each row. *3: The blank period after scanning the last channel is 0.3 μs. *4: The integration time for the first row in the rolling shutter mode is the time period from after 0.15 μs (period “A”) after the first row is scanned to the timing for holding the optical signal information integrated on the first row in the next frame. (Period “B”: 2.45 μs from the falling edge of the MCLK pulse right after the MSP goes high) As with the first row, the integration time for the second row onward is the time period from right after the end of scan on th at row to the timing for holding the optical signal information integrated in the next frame. From the second row onward, the integration start timing shifts by 30.2 μs right after the end of scan on the preceding row. Th is operation is repeated until the 128th row and then returns to the first row. Blank period between rows VIDEO_R KMIRC0071EB

InGaAs area image sensor G12242-0707W Parameter Symbol Min. Typ. Max. Unit Clock pulse voltage High V(MCLK) Vdd - 0.5 Vdd Vdd + 0.5 V Low 0 0 0.5 V Clock pulse rise/f all times tr(MCLK) 01 0 1 2 n stf(MCLK) Clock pulse width tpw(MCLK) 10 - - ns Start pulse voltage High V(MSP) Vdd - 0.5 Vdd Vdd + 0.5 V Low 0 0 0.5 V Start pulse rise/f all times tr(MSP) 01 0 1 2 n stf(MSP) Start pulse width*3 tpw(MSP) 0.001 - 10 ms Start (rise) timing*4 t1 10 - - ns Start (fall) timing*4 t2 10 - - ns Output settling time t3 - - 50 ns *3: Integration time max.=10 ms *4: Setting these timings shorter than the minimum value may delay the operation by one MCLK pulse and cause malfunction. Spectral response Photosensitivity temperature characteristics Photosensitivity (A/W) Wavelength (μm) 1.0 0.8 0.6 0.4 0.2 (Typ. Td=25 °C) KMIRB0079EA Note: chip temperature Wavelength (μm) Relative sensitivity (%) 100 (Typ.) Td=60 °C Td=40 °C Td=20 °C Td=-10 °C KMIRB0072EB Operation mode selection block Operating mode Mode 1 Mode 2 Rolling shutter mode Low Low Global shutter mode High Low * Low=0 V (Vss), High=5 V (Vdd)

InGaAs area image sensor G12242-0707W Current vs. voltage (TE-cooler) Thermistor temperature characteristics Temperature (°C) Thermistor resistance (kΩ) (Typ.) 0-10 -20 20 40 60 70 503010 KMIRB0067EA Cooling characteristics of TE-cooler Current (A) Element temperature (°C) -10 -20 (Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W) 0 0.1 0.2 KMIRB0073EA There is the following relation between the thermistor resistance and temperature (°C). R1: Resistance at T1 (°C) R2: Resistance at T2 (°C) B: B constant (B=3410 K ± 2%) Thermistor resistance=9 kΩ (at 25 °C) 0 0.1 0.3 0.8 Voltage (V) Current (A) (Typ. Ta=25 °C, thermal resistance of heatsink 0.5 °C/W) 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 KMIRB0074EA

InGaAs area image sensor G12242-0707W Pin connections Pin no. Name Input/Output Function Remark

1 Vss Input 0 V ground 0 V

2 Vdd Input +5 V power supply 5 V

3 MCLK Input Control pulse for timing generator Syochronized with falling edge

4 AD_TRIG Output A/D sampling signal Syochronized with falling edge

5 MSP Input Frame scan start pule

6 Mode 1 Input Mode switching

7 Mode 2 Input Mode switching

8 Vb1 Output Pixel bias voltage (internally generated) 0.5 V 9 PD_bias Input Photodiode bias voltage 3.0 V 10 Vref Input CMOS drive voltage 3.0 V 11 VIDEO_R Output Video output after reset 2.9 V typ. 12 VIDEO_S Output Video output after integration 2.9 to 4.0 V typ.

13 TE (-) Input Terminal for thermoelectric cooler (-)

14 THERM Output Terminal for thermistor

15 THERM Output Terminal for thermistor

16 TE (+) Input Terminal for thermoelectric cooler (+)

Note: Connect a bypass capacitor of 0.1 μF to the Vb1 terminal. Dimensional outline (unit: mm) Window ϕ10.0 ± 0.2 ϕ14.0 ± 0.2 ϕ15.3 ± 0.2 7.2 ± 0.3 10.0 ± 0.223 ± 2ϕ0.45 ġōŦŢť Photosensitive surface Package: Kovar Window: borosilicate glass with anti-reflective coating Window sealing method: hermetic Position accuracy of photosensitive area center with respect to cap center -0.5≤X≤+0.5 -0.5≤Y≤+0.5 9.5 ± 0.2 5.7 ± 0.2 1.9 ± 0.2 128 ch1 ch 16384 ch KMIRA0028EB

Cat. No. KMIR1022E03 Jun. 2014 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of June, 2014. InGaAs area image sensor G12242-0707W Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect th is de- vice from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbin g the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that n o spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder ing should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Handle the device within the temperature range specifi ed in the absolute maximum ratings. Operating or storing the device at an exces- sively high temperature and humidity may cause variations in performance characteristics and must be avoided. Related information ∙ Notice ∙ Image sensors/Precautions Precautions www.hamamatsu.com/sp/ssd/doc_en.html