G12181

G12181_15 HAMAMATSU | Alldatasheet

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(cutoff wavelength: 1.85 to 1.9 μm) www.hamamatsu.com Structure / Absolute maximum ratings Type no. Dimensional outline /Window material*1 Package Cooling Photosensitive area Absolute maximum ratings Thermister power dissipation TE-cooler allowable current TE-cooler allowable voltage Reverse voltage VR max Operating temperature Topr Storage temperature Tstg Soldering conditions (mm) (mW) (A) (V) (V) (°C) (°C) G12181-003K (1)/B TO-18 Non- cooled φ0.3 --- -40 to +85*2 -55 to +125*2 260 °C or less, within 10 s G12181-005K φ0.5 G12181-010K φ1 G12181-020K (2)/B TO-5 φ2 G12181-030K φ3 G12181-103K (3)/B TO-8 One-stage TE-cooled φ0.3 0.2 1.5 1.0 -40 to +70*2 -55 to +85*2 G12181-105K φ0.5 G12181-110K φ1 G12181-120K φ2 G12181-130K φ3 G12181-203K (4)/B TO-8 Two-stage TE-cooled φ0.3 1.0 1.2 G12181-205K φ0.5 G12181-210K φ1 G12181-220K φ2 G12181-230K φ3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: B=Borosilicate glass *2: No condensation Features Applications Options Optical power meters Amplifi er for InGaAs PIN photodiode C4159-03 Heatsink for one-stage TE-cooled type A3179 Heatsink for two-stage TE-cooled type A3179-01 Temperature controller for TE-cooled type C1103-04 Cutoff wavelength: 1.85 to 1.9 μm High sensitivity Gas analyzers Moisture meters NIR (near infrared) photometry Low cost High reliability High-speed response Photosensitive area: φ0.3 to φ3 mm Low noise The G12181 series may be destroyed or deteriorated by electrostatic discharge, etc. Be carefull when using the G12181 series.

InGaAs PIN photodiodes G12181 series Electrical and optical characteristics (Typ., unless otherwise noted) Spectral response Photosensitivity temperature characteristics (Typ. VR=0 V) 1.41.21.00.8 0.2 0.4 1.2 1.0 0.8 0.6 1.6 1.8 2.0 Td=25 ˚C Td=-10 ˚C Td=-20 ˚C Wavelength (μm) Photosensitivity (A/W) Wavelength (μm) Photosensitivity temperature coefficient (%/°C)-1 1.2 1.4 1.8 (Typ.) KIRDB0483EC KIRDB0208EA Type no. Measurement Condition Spectral response range λ Peak sensi- tivity wave- length λp Photo sensitivity S λ=λp Dark current ID VR=0.5 V Temp. coeffi cient of ID VR=0.5 V Cutoff frequency fc VR=0 V RL=50 Ω Terminal capacitance Ct VR=0 V f=1 MHz Shunt resistance Rsh VR=10 mV Detectivity λ=λp Noize equivalent power NEP λ=λpElement temperature (°C) Min. (A/W) Typ. (A/W) Typ. (nA) Max. (nA) Min. (MHz) Typ. (MHz) Typ. (pF) Max. (pF) Min. (MΩ) Typ. (MΩ) Min. (cm·Hz1/2/W) Typ. (cm·Hz1/2/W) Typ. (W/Hz1/2) Max. (W/Hz1/2)(μm) (μm) G12181-003K 25 0.9 to 1.9 1.75 0.9 1.1 11 0 1.07 40 90 25 50 10 50 3 × 1011 1 × 1012 2 × 10-14 5 × 10-14 G12181-005K 3 30 15 35 70 150 4 20 3 × 10-14 8.5 × 10-14 G12181-010K 10 100 5 10 230 500 1 5 6 × 10-14 2 × 10-13 G12181-020K 50 500 1.2 2.5 1000 2000 0.2 1 1.5 × 10-13 4 × 10-13 G12181-030K 100 1000 1 1.5 2000 3000 0.1 0.5 2 × 10-13 5 × 10-13 G12181-103K -10 0.9 to1.87 0.1 1 40 140 22 50 130 650 2 × 1012 5.5 × 1012 5 × 10-15 1.5 × 10-14 G12181-105K 0.3 3 15 50 64 150 50 250 7 × 10-15 2 × 10-14 G12181-110K 1 10 5 16 200 500 13 65 1.5 × 10-14 4 × 10-14 G12181-120K 5 50 1.2 3.5 900 2000 2.8 14 3.5 × 10-14 9 × 10-14 G12181-130K 10 100 1 1.8 1800 3000 1.3 6.5 5 × 10-14 1.5 × 10-13 G12181-203K -20 0.9 to1.85 0.05 0.5 40 150 20 50 280 1400 3 × 1012 8.5 × 1012 3.5 × 10-15 9 × 10-15 G12181-205K 0.15 1.5 15 53 60 150 110 550 5 × 10-15 1.5 × 10-14 G12181-210K 0.5 5 5 17 195 500 28 150 1 × 10-14 3 × 10-14 G12181-230K 5 50 1 1.9 1700 3000 2.8 14 3.5 × 10-14 9 × 10-14

InGaAs PIN photodiodes G12181 series Dark current vs. reverse voltage Linearity (G12181-010K) 0.01 0.1 1 10 Reverse voltage (V) Dark current 100 pA (Typ. Ta=25 °C) 1 nA 10 nA 100 nA 1 μA G12181-020K G12181-030K G12181-003K G12181-010K G12181-005K Relative sensitivity (%) (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) Incident light level (mW) 02 864 102 100 KIRDB0484EA KIRDB0535EA 0.01 0.1 1 10 Reverse voltage (V) Dark current 100 pA 10 pA (Typ.) 1 nA 10 nA 100 nA KIRDB0529EA Non-cooled type TE-cooled type

InGaAs PIN photodiodes G12181 series Shunt resistance vs. element temperatureShunt resistance Element temperature (°C) 1 MΩ -40 -20 0 40 60 10 MΩ 10 kΩ 1 kΩ 100 kΩ 10 GΩ 100 MΩ 1 GΩ (Typ. VR=10 mV) 20 80 100 G12181-003K/-103K/-203K G12181-005K/-105K/-205K G12181-010K/-110K/-210K G12181-020K/-120K/-220K G12181-030K/-130K/-230K KIRDB0486EB Terminal capacitance vs. reverse voltage Reverse voltage (V) Terminal capacitance 0.001 0.01 0.1 1 10 1 pF (Typ. Ta=25 °C, f=1 MHz) 100 pF 10 nF 10 pF 1 nF G12181-030K/-130K/-230K G12181-020K/-120K/-220K G12181-010K/-110K/-210K G12181-005K/-105K/-205K G12181-003K/-103K/-203K KIRDB0485EB The operating temperature for one-stage and two-stage TE-cooled types is up to 70 °C. Thermistor temperature characteristics Cooling characteristics of TE-cooler Element temperature (°C) Resistance (Ω) 103 (Typ.) 104 105 106 -40 -20 0 20-30 -10 10 30 Current (A) Element temperature (°C) -40 -60 -20 40 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) One-stage TE-cooled type Two-stage TE-cooled type KIRDB0116EA KIRDB0231EA

InGaAs PIN photodiodes G12181 series KIRDA0221EA Dimensional outlines (unit: mm) (1) G12181-003K/-005K/-010K (2) G12181-020K/-030K Window 3.0 ± 0.1 4.7 ± 0.1 2.6 ± 0.2 0.1 max. 3.6 ± 0.213 min. 5.4 ± 0.2 0.45 Lead Photosensitive surface Case 2.54 ± 0.2 Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 Window 5.9 ± 0.1 2.5 ± 0.2 0.15 max. 0.4 max. 8.1 ± 0.1 9.2 ± 0.2 4.2 ± 0.218 min. Case Photosensitive surface 5.1 ± 0.3 1.5 max. Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 0.45 Lead KIRDA0220EA Current vs. voltage (TE-cooler) 1.2 Voltage (V) Current (A) 1.0 0.6 0.8 1.4 1.6 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 0.4 0.2 One-stage TE-cooled type Two-stage TE-cooled type KIRDB0115EB

Cat. No. KIRD1117E02 Apr. 2013 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of April, 2013. InGaAs PIN photodiodes G12181 series KIRDA0225EA KIRDA0224EA Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Window 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 A 6.4 ± 0.212 min. 0.45 Lead Photosensitive surface 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 G12181-103K /-105K/-110K 4.3 ± 0.2 G12181-120K /-130K 4.4 ± 0.2A Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 0.2 max. Window 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 A 10 ± 0.212 min. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 0.45 Lead 5.1 ± 0.2 G12181-203K /-205K/-210K 6.6 ± 0.2 G12181-220K /-230K 6.7 ± 0.2A Photosensitive surface 0.2 max. Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 KIRDA0224EA