G12180

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Low noise, low dark current Large photosensitive area Low terminal capacitance Various photosensitive area sizes available Type no. Dimensional outline/ Window material*1 Package Cooling Photosensitive area Absolute maximum ratings Thermistor power dissipation TE-cooler allowable current TE-cooler allowable voltage Reverse voltage Operating temperature*2 Storage temperature*2 Soldering conditions (mm) (mW) (A) (V) (V) (°C) (°C) G12180-003A (1)/K TO-18 Non- cooled ϕ0.3 -- - -40 to +100 -55 to +125 260 °C or less, within 10 s G12180-005A ϕ0.5 G12180-010A ϕ11 0 G12180-020A (2)/K TO-5 ϕ2 5G12180-030A ϕ3 G12180-050A (3)/K TO-8 ϕ52 G12180-110A (4)/K One-stage TE-cooled 0.2 1.5 1 5 -40 to +70 -55 to +85 G12180-120A ϕ2 G12180-130A ϕ3 G12180-150A ϕ52 G12180-210A (5)/K Two-stage TE-cooled 1 1.2 5G12180-220A ϕ2 G12180-230A ϕ3 G12180-250A ϕ52 *1: K: borosilicate glass with anti-refl ective coating (optimized for 1.55 μm peak) *2: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. The G12180 series may be damaged by electrostatic discharge, etc. Be careful when using the G12180 series.

InGaAs PIN photodiodes G12180 series Spectral response Wavelength (μm) Photosensitivity (A/W) (Typ.) 1.2 1.0 0.8 0.6 0.4 0.2 Td=25 ˚C Td=-10 ˚C Td=-20 ˚C KIRDB0374EB Spectral transmittance characteristics of window material Wavelength (μm) Transmittance (%) (Typ. Ta=25 °C) 100 KIRDB0545EA Electrical and optical characteristics (Typ. unless otherwise noted) Type no. Measurement condition Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S Dark current ID VR=1 V Temper- ature coeffi cient of dark current ∆TID VR=1 V Cutoff frequency fc VR=1 V RL=50 Ω Terminal capaci- tance Ct VR=1 V f=1 MHz Shunt resistance Rsh VR=10 mV Detectivity λ=λp Noise equivalent power NEP λ=λp Element temperature 1.3 μm λ=λp (℃)( μm) (μm) Min. (A/W) Typ. (A/W) Min. (A/W) Typ. (A/W) Typ. (nA) Max. (nA) Min. (MHz) Typ. (MHz) Typ. (pF) Max. (pF) Min. (MΩ) Typ. (MΩ) Min. (cm·Hz1/2/W) Typ. (cm·Hz1/2/W) Typ. (W/Hz1/2) Max. (W/Hz1/2) G12180-003A 25 0.9 to 1.7 0.1*3 0.5*3 1.09 450*4 600*4 5*5 7.5*5 200 1000 2.4 × 1012 6.3 × 1012 G12180-005A 0.15*3 0.75*3 160*4 200*4 15*5 20*5 80 400 7.0 × 10-15 1.9 × 10-14 G12180-010A 0.8*3 4*3 25*4 60*4 55*5 120*5 25 125 1.4 × 10-143.8 × 10-14 G12180-110A -10 0.9 to 1.67 0.02 0.1 20 40 75 140 750 3750 1.6 × 1013 4.4 × 1013 G12180-120A 0.1 0.5 4 13 250 800 200 900 4.0 × 10-151.1 × 10-14 G12180-210A -20 0.9 to 1.65 0.01 0.06 20 40 75 140 1750 8750 2.6 × 1013 6.7 × 1013 G12180-220A 0.04 0.2 4 13 250 800 500 2000 2.7 × 10-156.5 × 10-15 *3: VR=5 V *4: VR=5 V, RL=50 Ω, -3 dB *5: VR=5 V, f=1 MHz

InGaAs PIN photodiodes G12180 series Photosensitivity temperature characteristics Wavelength (μm) Temperature coefficient of sensitivity (%/°C) (Typ. Ta=25 °C) KIRDB0042EA Linearity 02 6 1 0 1 2 1 6 Incident light level (mW) Relative sensitivity (%) 100 102 (Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V) 48 1 4 G12180-010A G12180-020A G12180-030A G12180-050A KIRDB0541EA Dark current vs. reverse voltage Reverse voltage (V) Dark current 0.01 0.1 1 10 100 10 nA 100 pA 10 pA 1 nA 100 nA (Typ. Ta=25 °C) G12180-003A G12180-005A G12180-010A G12180-020A G12180-030AG12180-050A KIRDB0542EB Non-cooled type TE-cooled type KIRDB0607EA 0.01 0.1 1 10 Reverse voltage (V) Dark current 1 nA 100 pA 10 pA (Typ.) 1 pA G12180-250A (Td=-20 °C) Solid line G12180-120A (Td=-10 °C) G12180-130A (Td=-10 °C) G12180-110A (Td=-10 °C) Dotted line

InGaAs PIN photodiodes G12180 series Terminal capacitance vs. reverse voltage Shunt resistance vs. element temperature Element temperature (°C) Shunt resistance (Typ. VR=10 mV) 1 GΩ -40 -20 0 40 60 80 100 100 MΩ 1 MΩ 1 kΩ 10 kΩ 100 kΩ 10 MΩ 10 GΩ 1 TΩ 100 GΩ G12180-003A G12180-005A G12180-010A/ -110A/-210A G12180-020A/ -120A/-220A G12180-030A/ -130A/-230A G12180-050A/-150A/-250A Reverse voltage (V) Terminal capacitance 1 nF 0.01 0.1 1 10 100 100 pF 1 pF 10 pF 10 nF (Typ. Ta=25 °C, f=1 MHz) G12180-003A G12180-005A G12180-010A/ -110A/-210A G12180-020A/ -120A/-220A G12180-030A/ -130A/-230A G12180-050A/-150A/-250A KIRDB0544EB KIRDB0543EB Thermistor temperature characteristics Cooling characteristics of TE-cooler Element temperature (°C) Resistance (Ω) 103 (Typ.) 104 105 106 -40 -20 0 20 Current (A) Element temperature (°C) -40 -60 -20 40 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) One-stage TE-cooled type Two-stage TE-cooled type KIRDB0116EA KIRDB0231EA

InGaAs PIN photodiodes G12180 series Dimensional outlines (unit: mm) Window ϕ2.2 min. ϕ4.7 ± 0.1 2.6 ± 0.2 3.7 ± 0.213 min. ϕ5.4 ± 0.2 ϕ0.45 Lead Case ϕ2.5 ± 0.2 Photosensitive surface KIRDA0150EC Current vs. voltage (TE-cooler) 1.2 Voltage (V) Current (A) 1.0 0.6 0.8 1.4 1.6 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 0.4 0.2 One-stage TE-cooled type Two-stage TE-cooled type KIRDB0115EB

InGaAs PIN photodiodes G12180 series KIRDA0052EC (2) G12180-020A/-030A (3) G12180-050A Window ϕ4.5 min. 2.5 ± 0.20.4 max. ϕ8.3 ± 0.1 ϕ9.2 ± 0.2 4.9 ± 0.218 min.ϕ0.45 Lead Case ϕ5.1 ± 0.3 ϕ1.5 max. Photosensitive surface ϕ0.45 Lead ϕ1.0 Window ϕ7.0 min. ϕ12.4 ± 0.1 ϕ13.8 ± 0.2 ϕ7.5 ± 0.2 Index mark 2.8 ± 0.2 0.5 4.9 ± 0.214 min. Case Photosensitive surface KIRDA0155EB

InGaAs PIN photodiodes G12180 series Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Window ϕ10 ± 0.2 ϕ14 ± 0.2 ϕ15.3 ± 0.2 A 6.4 ± 0.212 min.ϕ0.45 Lead 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 G12180-110A 4.3 ± 0.2 G12180-120A /-130A/-150A 4.4 ± 0.2A Photosensitive surface Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 KIRDA0246EA KIRDA0247EA Window ϕ10 ± 0.2 ϕ14 ± 0.2 ϕ15.3 ± 0.2 A 10 ± 0.212 min. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 ϕ0.45 Lead 5.1 ± 0.2 G12180-210A 6.6 ± 0.2 G12180-220A /-230A/-250A 6.7 ± 0.2A Photosensitive surface Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3

Cat. No. KIRD1121E04 Jul. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of July, 2015. InGaAs PIN photodiodes G12180 series Related information ∙ Disclaimer ∙ Metal, ceramic, Plastic products Technical information ∙ Infrared detectors Precautions www.hamamatsu.com/sp/ssd/doc_en.html