G11777

G11777_15 HAMAMATSU | Alldatasheet

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Surface mounted type COB (chip on board) package www.hamamatsu.com Structure Absolute maximum ratings Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Speci fi cation Unit Window material - Resin - Package - Surface mount type COB - Photosensitive area - φ0.3 mm Parameter Symbol Value Unit Reverse voltage V R 10 V Operating temperature Topr -25 to +80 °C Storage temperature Tstg -40 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 0.9 to 1.7 - μm Peak sensitivity wavelength λp - 1.55 - μm Dark current I D VR=5 V - 0.1 0.8 nA Cutoff frequency fc V R=5 V, RL=50 Ω 300 500 - MHz Terminal capacitance Ct V R=5 V, f=1 MHz - 6 10 pF Shunt resistance Rsh V R=10 mV 100 700 - M Ω Detectivity D * λ=λp 1 × 1012 5 × 1012 - cm·Hz 1/2/W Noise equivalent power NEP λ=λp - 5 × 10 -15 2 × 10-14 W/Hz1/2 The G11777-003P may be damaged by electrostatic discharge. Be carefull when using the G11777-003P. The G11777-003P is a small-size near infrared detector available in a surface mount COB (chip on board) package. Its size is drastically reduced compared to the previous metal package type (G8376-03). The spectral response covers a range from 0.9 to 1.7 μm (with peak sensitivity wavelength at 1.55 μm) and delivers high sensitivity and low noise. In addition to optical communication, other applications include analysis and measurement utilizing near infrared light. High sensitivity High-speed response Photosensitive area: φ0.3 mm Surface mount type Small size COB package Low cost Compatible lead-free refl ow soldering Low noise Measurement Analysis Optical light level monitor Features Applications

InGaAs PIN photodiode G11777-003P Spectral response Dark current vs. reverse voltage Sensitivity temperature characteristic Terminal capacitance vs. reverse voltage Wavelength (µm) Photosensitivity (A/W) 1.9 0.6 0.8 1.0 0.4 0.2 (Typ. Ta=25 °C) 1.2 0.7 Reverse voltage (V) Dark current 0.01 0.1 1 10 100 10 nA 100 pA 1 pA 10 pA 1 nA (Typ. Ta=25 °C) Wavelength (µm) Temperature coefficient of sensitivity (%/°C) (Typ. Ta=25 °C) Reverse voltage (V) Terminal capacitance 1 nF 0.01 0.1 1 10 100 100 pF 1 pF 10 pF (Typ. Ta=25 °C) KIRDB0474EA KIRDB0468EA KIRDB0042EA KIRDB0469EA

InGaAs PIN photodiode G11777-003P Recommended solder reflow condition ı Ķı ĵıı Time (s) Temperatureġĩ°CĪ Ķı ı Ĵıı

• After unpacking, store this device in an environment at a temperature from 5 to 30 °C and a humidity below 60%, and perform reflow soldering on this device within 72 hours.
• Thermal stress applied to the device during reflow soldering differs depending on the PC boards and reflow oven being used.
• When setting the reflow conditions, make sure that the reflow soldering process does not degrade device reliability. IJıı IJĶı IJıı IJĶı ijıı ijĶı ijıı ijĶı Ĵıı ĴĶı Peak temperature 250 °C max. KIRDB0470EA Linearity Dark current vs. ambient temperature Incident light level (mW) Relative sensitivity (%) 102 100 (Typ. Ta=25 °C, λ=1.55 µm, R L=2 Ω, VR=1 V) 4 6 8 10 12 14 16 Light spot size: 50 µm Light spot size: 200 µm Ambient temperature (°C) Dark current 10 nA -40 -20 60 40 80 100 1 nA 10 pA 1 pA 100 pA 100 nA (Typ. VR=5 V) 200 KIRDB0475EA KIRDB0476EA

InGaAs PIN photodiode G11777-003P Cat. No. KIRD1114E03 Feb. 2012 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of February, 2012. Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.1) Photosensitive area 0.3 Resin őũŰŵŰŴŦůŴŪŵŪŷŦġŴŶųŧŢŤŦ ıįĹı ıįĹıIJįķı ıįIJı ıįĵĺ Position accuracy of photosensitive area to base center -0.25 ≤ X ≤ +0.05 -0.15 ≤ Y ≤ +0.15 ıįĸııįĵııįĸı ıįĸĶ Recommended land pattern ıįĶĶ ıįĶĶ ıįĶııįĶı Cathode padAnode pad KIRDA0213EC