G11620

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Two selectable conversion effi ciencies High resolution: 25 μm pitch (G11620-256DF/-512DA) Low noise, low dark current Simple operation (by built-in timing generator)*2 Anti-saturation circuit CDS circuit*1 Built-in thermistor *1: A major source of noise in charge amplifi ers is the reset noise generated when the integration capacitance is reset. A CDS (correlated double sampling) circuit greatly reduces this reset noise by holding the signal immediately after reset to fi nd the noise differential. *2: Different signal timings must be properly set in order to operate a shift register. In conventional image sensor operation, ext ernal PLDs (programmable logic device) are used to input the required timing signals. However, the image sensors internally generate all timing signals on the CMOS chip just by supplying CLK and RESET pulses. This makes it simple to set the timings.

InGaAs linear image sensors G11620 series (non-cooled type) KMIRC0086EA Details of photosensitive area (unit: μm) H x V G11620-128DA G11620-256DA G11620-256DF G11620-512DA Type no. x 10 25 H 500 500 V Block diagram (G11620-512DA) CMOS chip CLK RESET chipVIDEO AD_trig Timing circuit Shift registor Charge amplifier CMOS readout circuit Shift register AD_sp KMIRC0048EA

InGaAs linear image sensors G11620 series (non-cooled type) Absolute maximum ratings Parameter Symbol Condition Min. Typ. Max. Unit Supply voltage Vdd, INP, Fvref Vinp, PDN Ta=25 °C -0.3 - +6 V Clock pulse voltage Vϕ Ta=25 °C -0.3 - +6 V Reset pulse voltage V(RES) Ta=25 °C -0.3 - +6 V Gain selection terminal voltage Vcfsel Ta=25 °C -0.3 - +6 V Operating temperature Topr No dew condensation*3 -10 - +60 °C Storage temperature Tstg No dew condensation*3 -20 - +70 °C Soldering conditions - 260 °C or less, within 5 s - Thermistor power disspation Pd_th Ta=25 °C - - 400 mW *3: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maxi- mum ratings. Recommended terminal voltage (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.7 5.0 5.3 V Differential reference voltage Fvref 1.1 1.2 1.3 V Video line reset voltage Vinp 3.9 4.0 4.1 V Input stage amplifi er reference voltage INP 3.9 4.0 4.1 V Photodiode cathode voltage PDN 3.9 4.0 4.1 V Ground Vss - 0 - V Clock pulse voltage High Vϕ 4.7 5.0 5.3 VLow 0 0 0.4 Reset pulse voltage High V(RES) 4.7 5.0 5.3 VLow 0 0 0.3 Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Consumption current I(Vdd) G11620-128DA - 35 60 mA G11620-256DF - 50 80 G11620-256DA - 55 80 G11620-512DA - 80 100 Ifvref - - 1 Ivinp - - 1 Iinp - - 1 Ipdn - - 1 Clock frequency f 0.1 1 5 MHz Video data rate DR 0.1 f 5 MHz Video output voltage High VH - 4.0 - VLow VL - 1.2 - Output offset voltage Vos - Fvref - V Output impedance Zo - 5 - kΩ AD_trig, AD_sp pulse voltage High Vtrig, Vsp - Vdd - VLow - GND - Thermistor resistance Rth 9.0 10.0 11.0 kΩ Thermistor B constant*4 B - 3950 - K

InGaAs linear image sensors G11620 series (non-cooled type) Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, Vϕ=5 V, f=1 MHz) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ - 0.95 to 1.7 - μm Peak sensitivity wavelength λp 1.45 1.55 1.65 μm Photo sensitivity S λ=λp 0.7 0.82 - A/W Conversion effi ciency*5 CE Cf=10 pF - 16 - nV/e- Cf=1 pF - 160 - Photo response non-uniformity*6 PRNU - ±5 ±10 % Saturation charge Qsat CE=16 nV/e- 168 175 - Me- CE=160 nV/e- 16.8 17.5 - Saturation voltage Vsat 2.7 2.8 - V Dark output VD CE=16 nV/e- - ±0.05 ±0.5 V/s Dark current ID CE=16 nV/e- - ±0.5 ±5 pA Temperature coeffi cient of dark output (dark current) - CE=16 nV/e - - 1.1 - times/°C Readout noise*7 N CE=16 nV/e- - 200 400 μV rmsCE=160 nV/e- - 300 500 Dynamic range D CE=16 nV/e - 6750 14000 - - Defective pixels*8 - CE=16 nV/e - --1 % *5: Refer to pin connection when changing conversion efficiency. *6: 50% of saturation, integration time 10 ms, after dark output subtraction, excluding fi rst and last pixels *7: Integration time=10 ms (CE=16nV/e-), 1 ms (CE=160 nV/e-) *8: Pixels with photo response non-uniformity, readout noise, or dark current higher than the maximum value

InGaAs linear image sensors G11620 series (non-cooled type) Charge amplifier arrayPhotodiode array CMOS readout circuit S/H Cf_select Fvref VIDEO PDN INP Charge amplifier arrayPhotodiode array CMOS readout circuit Even- number pixels Odd-number pixels Even-number pixels Odd- number pixels Fvref VIDEO PDN S/H S/H Cf_select Cf_select INP INP KMIRC0049EA KMIRC0054EA Equivalent circuit G11620-128DA/256DA G11620-256DF/512DA

InGaAs linear image sensors G11620 series (non-cooled type) Timing chart CLK RESET RESET CLK AD_sp AD_trig VIDEO

5 CLK

tf(clk) tr(clk) 12 n - 1 Note: n=number of channels n Blank Integration time (actual) tr(res) tpw(res) tf(res) tpw(clk) Integration time (setting) n × CLK KMIRC0055EB Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency f 0.1 1 5 MHz Clock pulse width tpw(clk) 60 500 5000 ns Clock pulse rise/fall times tr(clk), tf(clk) 0 20 30 ns Reset pulse width High tpw(res) 6-- clocksLow “Number of pixels” + 28 - - Reset pulse rise/fall times tr(res), tf(res) 0 20 30 ns

InGaAs linear image sensors G11620 series (non-cooled type) KMIRB0051EB KMIRB0090EA Spectral response (typical example) Spectral transmittance characteristic of window material (typical example) Photo sensitivity (A/W) Wavelength (μm) 1.0 0.8 0.6 0.4 0.2 (Ta=25 °C) Wavelength (μm) Transmittance (%) 100 (Ta=25 °C) Connection example Pulse generator Controller Supply voltage CLK RESET AD_sp AD_trig VIDEO ADC Buffer amp Buffer amp Buffer amp Cf_select 1 INP PDN Vinp Fvref Vdd GND Cf_select 2 KMIRC0056EB

InGaAs linear image sensors G11620 series (non-cooled type) KMIRB0091EA Linearity error Output voltage (mV) -20 -15 1 10 100 1000 10000 (Td=25 ˚C, Vdd=5 V, INP=Vinp=PDN=4 V, Fvref=1.2 V, f=1 MHz, CE=16 nV/eˉ) -10 Linearity error (%) Temperature characteristic of thermistor Temperature (°C) Thermistor resistance (kΩ) -40 -30 -20 -10 0 40 7050 100

1000 Temperature

(°C) -40 -35 -30 -25 -20 -15 -10 Thermistor resistance (kΩ) 281 208 155 117 88.8 68.4 53.0 41.2 32.1 25.1 19.8 15.7 (Typ.) 3010 20 60 Temperature (°C) Thermistor resistance (kΩ) 12.5 10.0 8.06 6.53 5.32 4.36 3.59 2.97 2.47 2.07 1.74 KMIRB0061EA

InGaAs linear image sensors G11620 series (non-cooled type) Dimensional outlines (unit: mm) 31.8 ± 0.3 16.8 ± 0.3 1 2 10 11 22 21 13 12 3.0 ± 0.3 13.2 ± 0.3 15.1 ± 0.3 4 ± 1 15.5 ± 0.3 Index mark Photosensitive area (left side 1 ch) 25.4 ± 0.15 Thermistor 1.7 ± 0.2 3.0 ± 0.3 15.24 ± 0.3 0.25 ± 0.05 Photosensitive surface Window Chip material: InGaAs Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: nd=1.47 Window material thickness: 0.75 ± 0.05 AR-coated Window sealing method: resin adhesion Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 * PDN and INP should be at the same potential. When supplying voltage to PDN and INP, it is recommended to use the same power source and short between their pins. FunctionPin no. FunctionPin no. NC NC NC NC Cf_select 2 Cf_select 1 Thermistor Thermistor NC Fvref NC VIDEO Vinp CLK PDN* INP* GND Vdd NC AD_trig RESET AD_sp Photosensitive surface 1.7 ± 0.2 KMIRA0030EB G11620-128DA/256DF

InGaAs linear image sensors G11620 series (non-cooled type) 31.8 ± 0.3 23.2 ± 0.3 1 2 10 11 22 21 13 12 3.0 ± 0.3 Photosensitive surface 1.7 ± 0.2 13.2 ± 0.3 15.1 ± 0.3 4 ± 1 15.5 ± 0.3 2.54 ± 0.15 25.4 ± 0.15 0.51 ± 0.05 Index mark Photosensitive area (left side 1 ch) Chip material: InGaAs Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: nd=1.47 Window material thickness: 0.75 ± 0.05 AR-coated Window sealing method: resin adhesion Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 * PDN and INP should be at the same potential. When supplying voltage to PDN and INP, it is recommended to use the same power source and short between their pins. FunctionPin no. FunctionPin no. NC NC NC NC Cf_select 2 Cf_select 1 Thermistor Thermistor NC Fvref NC VIDEO Vinp CLK PDN* INP* GND Vdd NC AD_trig RESET AD_sp Thermistor 1.7 ± 0.2 3.0 ± 0.3 15.24 ± 0.3 0.25 ± 0.05 Photosensitive surface Window KMIRA0023ED G11620-256DA/512DA

InGaAs linear image sensors G11620 series (non-cooled type) Cat. No. KMIR1019E06 Jul. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of July, 2015. Pin connections Terminal name Input/Output Function and recommended connection Remark PDN Input Cathode bias terminal for InGaAs photodiode. This should be at the same potential as INP. 4.0 V AD_sp Output Digital start signal for A/D conversion 0 to 5 V Cf_select1, 2 Input* 9 Signal for selecting feedback capacitance (integration capacitance) on CMOS chip 0 V or 5 V Thermistor Output Thermistor for monitoring temperature inside the package - AD_trig Output Sampling synchronous signal for A/D conversion 0 to 5 V RESET Input Reset pulse for initializing the feedback capacitance in the charge amplifi er formed in the CMOS chip. Integration time is determined by the high period of this pulse. 0 to 5 V CLK Input Clock pulse for operating the CMOS shift register 0 to 5 V INP Input Input stage amplifi er reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. This should be at the same potential as PDN. 4.0 V Vinp Input Video line reset voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. 4.0 V Fvref Input Differential amplifier reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. 1.2 V VIDEO Output Differential ampli fi er output. Analog video signal. 1.2 to 4.0 V Vdd Input Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V) 5 V GND Input Grand for the signal processing circuit in the CMOS chip (0 V) 0 V *9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below. Conversion effi ciency Cf_select1 Cf_select2 16 nV/e- (Low gain) High High 160 nV/e- (High gain) High Low Low: 0 V (GND), High: 5 V(Vdd) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect th is de- vice from surge voltages which might be caused by peripheral equipment. Related information ∙ Disclaimer ∙ Image sensors Precautions www.hamamatsu.com/sp/ssd/doc_en.html