G11135-256DD

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InGaAs linear image sensors Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 μm) www.hamamatsu.com G11135-256DD, G11135-512DE The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge ampli fi er array, an offset compensation circuit, a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium bumps. The charge amplifi er array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near infrared spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion ef fi ciency (CE) that can be selected by the ex- ternal voltage to meet the application. Single video line (256/512 pixels) High-speed data rate: 5 MHz max. Choice of two conversion effi ciency levels Foreign object screening Driver circuit for InGaAs liner image sensor C11514 Agricultural product inspection Pixel size: G11135-256DD (50 × 50 μm) G11135-512DE (25 × 25 μm) Built-in temperature sensor Small variations in dark output between pixels Room temperature operation Features Applications

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Parameter G11135-256DD G11135-512DE Unit Cooling Non-cooled - Number of total pixels 256 512 pixels Number of effective pixels 256 512 pixels Image size 12.8 × 0.05 12.8 × 0.025 mm Pixel size 50 × 50 25 × 25 μm (H) × μm (V) Pixel pitch 50 25 μm Package 22-pin ceramic (refer to the dimensional outline) - Window material Borosilicate glass with anti-refl ective coating - CMOS chip Bump InGaAs photodiode array Window Wire bonding KMIRC0053EA Cross sectional image

InGaAs linear image sensors G11135-256DD, G11135-512DE Absolute maximum ratings Recommended terminal voltage Parameter Symbol Condition Value Unit Supply voltage Vdd, INP, Fvref, Vinp, PDN Ta=25 °C -0.3 to +6.0 V Clock voltage Vɸ Ta=25 °C -0.3 to +6.0 V Reset pulse voltage V(RES) Ta=25 °C -0.3 to +6.0 V Gain selection terminal voltage Vcfsel Ta=25 °C -0.3 to +6.0 V Operating temperature Topr -10 to +60 °C Storage temperature Tstg -20 to +70 °C Soldering conditions - 260 °C or less, within 5 s - Thermistor power dissipation Pd_th Ta=25 °C 400 max. mW Note: This product must be used within the range of the absolute maximum ratings. Product quality may suffer if any item of the absolute maximum ratings is exceeded even momentarily. Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 4.7 5.0 5.3 V Differential reference voltage Fvref 1.1 1.2 1.3 V Video line reset voltage Vinp 3.9 4.0 4.1 V Input stage amplifi er reference voltage INP 3.9 4.0 4.1 V Pixel voltage PDN 3.9 4.0 4.1 V Clock pulse voltage High Vɸ 4.7 5 5.3 VLow - 0 0.4 Reset pulse voltage High RESET 4.7 5 5.3 VLow - 0 0.3 Block diagram (G11135-512DE) CMOS chip CLK RESET chipVIDEO AD_trig Timing generator Shift register Charge amplifier CMOS readout circuit Shift register AD_sp KMIRC0048EA

InGaAs linear image sensors G11135-256DD, G11135-512DE Electrical characteristics (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Supply current 256 ch lvdd -5 0 7 5 mA512 ch - 75 100 Differential reference current Ifvref - - 1 mA Video line reset voltage Ivinp - - 1 mA Input stage amplifi er reference current I(INP) - - 1 mA Pixel voltage I(PDN) - - 1 mA Output voltage High VIDEO - 3.85 - VLow - 1.25 - Clock frequency f 0.1 - 5 MHz Output impedance Zo - 5 - kΩ Data rate DR 0.1 f 5 MHz A/D trigger, A/D start pulse voltage High Vtrg,Vsp - Vdd - VLow - GND - Thermistor resistance Rth - 10 - kΩ Thermistor B constant*6 B - 3950 - K Electrical and optical characteristics (Ta=25 °C, Vdd=5 V, INP, Vinp, PDN=4 V, Fvref=1.2 V, f=5 MHz) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ 0.95 to 1.7 - μm Peak sensitivity wavelength λp 1.45 1.55 1.65 μm Photo sensitivity S λ=λp 0.7 0.82 - A/W Conversion effi ciency*1 CE High gain - 930 - nV/e- Low gain 160 Saturation charge*2 Qsat - 2.8 - Me- Saturation voltage*2 Vsat 2.3 2.6 - V Photoresponse nonuniformity*3 PRNU - ±5 ±10 % Average dark output*4 VDmean 1.05 1.25 1.45 V Dark output nonuniformity*4 DSNU - ±3 ±10 mV Readout noise*4 N -12 mV rms Dynamic range D 1200 2600 - - Defective pixels*5 - --1 % *1: Cf_select=0 V (high gain), 5 V (low gain) *2: High gain, integration time 500 μs *3: High gain, 50% of saturation, after dark output subtraction, excluding fi rst and last pixels, integration time 200 μs *4: High gain, integration time 200 μs *5: Pixels with photoresponse nonuniformity, readout noise, or dark output nonuniformity higher than the maximum value

InGaAs linear image sensors G11135-256DD, G11135-512DE Equivalent circuit G11135-256DD G11135-512DE Charge amplifier arrayPhotodiode array CMOS readout circuit S/H Cf_select Fvref VIDEO PDN INP KMIRC0049EA Charge amplifier arrayPhotodiode array CMOS readout circuit Even pixels Odd pixels Even pixels Odd pixels Fvref VIDEO PDN S/H S/H Cf_select Cf_select INP INP KMIRC0054EA

InGaAs linear image sensors G11135-256DD, G11135-512DE Connection example Pulse generator Controller Supply voltage CLK Reset AD_sp AD_trig Video ADC Buffer amp Buffer amp Buffer amp Cf_select INP PDN Vinp Fvref Vdd GND KMIRC0051EA

InGaAs linear image sensors G11135-256DD, G11135-512DE Timing chart (G11135-512DE) , ) CLK Reset Reset CLK AD_sp AD_trig Video KMIRC0

5 CLK

4 CLK

Integration time (actual) = Integration time (setting) - 8 μs + 1 CLK tf(clk) tr(clk) 12 511 512 Blank Integration time (actual) tr(res) tpw(res) tf(res) tpw(clk)

512 CLK

8 μs Integration time (setting)

6 CLK

Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency f 0.1 - 5 MHz Clock pulse width tpw(clk) 60 100 - ns Clock pulse rise/fall times tr(clk), tf(clk) 0 20 30 ns Reset pulse width High tpw(res) * 7 -- *8 clockLow Number of channels + 12 -- Reset pulse rise/fall times tr(res), tf(res) 0 20 30 ns *7: (5 CLK + 8 μs) or (18 μs -1 CLK), whichever is longer. *8: 1.008 ms - 1 CLK

InGaAs linear image sensors G11135-256DD, G11135-512DE Spectral response Temperature characteristics of thermistor Photo sensitivity (A/W) Wavelength (μm) 1.0 0.8 0.6 0.4 0.2 (Ta=25 °C) Temperature (°C) Thermistor resistance (kΩ) -10 0 10 20 30 40 60 50 100

1000 Temperature

(°C) -10 Thermistor resistance (kΩ) 53.0 41.2 32.1 25.1 19.8 15.7 12.5 10.0 8.06 6.53 5.32 4.36 3.59 2.97 2.47 (Typ.) (Typ.) KMIRB0051EB KMIRB0059EA

InGaAs linear image sensors G11135-256DD, G11135-512DE Terminal name Input/Output Function and recommended connection Remark PDN Input Cathode bias terminal for InGaAs photodiode 4.0 V AD_sp Output Digital start signal for A/D conversion 0 to 5 V Cf_select Input *9 Signal for selecting feedback capacitance (integration capacitance) on CMOS chip 0 V or 5 V Thermistor Output Thermistor for monitoring temparature inside the package - AD_trig Output Sampling synchronous signal for A/D conversion 0 to 5 V RESET Input Reset pulse for initializing the feedback capacitance in the charge amplifier formed in the CMOS chip. Integration time is determined by the high period of this pulse. 0 to 5 V CLK Input Clock pulse for operating the CMOS shift register 0 to 5 V INP Input Input stage ampli fi er reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. 4.0 V Vinp Input Video line reset voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. 4.0 V Fvref Input Differential amplifi er reference voltage. Supply voltage for operating the signal processing circuit in the CMOS chip. 1.2 V VIDEO Output Differential ampli fi er output. Analog video signal. 1.25 to 3.85 V Vdd Input Supply voltage for operating the signal processing circuit in the CMOS chip (+5 V) 5 V GND Input Grand for the signal processing circuit in the CMOS chip (0 V) 0 V *9: Conversion efficiency is determined by supply voltage to the Cf_select terminals as shown below. Pin connections Conversion effi ciency Cf_select 160 nV/e- High 930 nV/e- Low Low: 0 V (GND), High: 5 V (Vdd)

InGaAs linear image sensors G11135-256DD, G11135-512DE Dimensional outline (unit: mm) 0022 31.8 ± 0.3 23.2 ± 0.3 1 2 10 11 22 21 13 12 3.0 ± 0.3 Photosensitive surface 1.7 ± 0.2 13.2 ± 0.3 15.1 ± 0.3 4 ± 1 15.5 ± 0.3 Index mark Photosensitive area (left side 1 ch) 1 NC FunctionPin no. 9 NC Function Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° Package material: ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Window material: borosilicate glass Window material thickness: 0.75 ± 0.05 mm Reflective index of window material: nd=1.47 AR coat: coated (1.55 μm peak) Window sealing method: resin bonding Pin no.

17 GND

10 Fvref

18 Vdd

12 Video

20 AD_trig

5 GND

13 Vinp

21 Reset

6 Cf_select

14 CLK

22 AD_sp

7 Thermistor

15 PDN

8 Thermistor

16 INP

Note: NC should be left open. Do not connect it to GND. KMIRA0022EE Dimensional outline (unit: mm)

Cat. No. KMIR1018E11 Jul. 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of July, 2015. InGaAs linear image sensors G11135-256DD, G11135-512DE Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect th is de- vice from surge voltages which might be caused by peripheral equipment. Related information ∙ Disclaimer ∙ Image sensors Precautions www.hamamatsu.com/sp/ssd/doc_en.html